Patents by Inventor Kuo Cheng Wang
Kuo Cheng Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153958Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.Type: ApplicationFiled: January 7, 2024Publication date: May 9, 2024Inventors: Jung-Hung CHANG, Zhi-Chang LIN, Shih-Cheng CHEN, Chien Ning YAO, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20240145470Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Publication number: 20240145540Abstract: A semiconductor device includes a first active region, a second active region and a dielectric wall. The second active region disposed adjacent to the first active region, and there is a first space between the first active region and the second active region. The dielectric wall is formed within the first space and has a first sidewall and a second sidewall opposite to the first sidewall. The first sidewall and the second sidewall opposite to the first sidewall continuously extend along a plane.Type: ApplicationFiled: January 20, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shi Ning JU, Kuo-Cheng CHIANG, Guan-Lin CHEN, Jung-Chien CHENG, Chih-Hao WANG
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Patent number: 11973079Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a stack of semiconductor layers comprising a plurality of first semiconductor layers and a plurality of second semiconductor layers over a semiconductor substrate. A first stack of masking layers is formed over the stack of semiconductor layers with a first width and a second stack of masking layers is formed laterally offset from the stack of semiconductor layers with a second width less than the first width. A patterning process is performed on the semiconductor substrate and the stack of semiconductor layers, thereby defining a first fin structure laterally adjacent to a second fin structure. The first fin structure has the first width and the second fin structure has the second width. The stack of semiconductor layers directly overlies the first fin structure and has the first width.Type: GrantFiled: May 19, 2022Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chao Chou, Chih-Hao Wang, Shi Ning Ju, Kuo-Cheng Chiang, Wen-Ting Lan
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Publication number: 20240136346Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.Type: ApplicationFiled: April 17, 2023Publication date: April 25, 2024Inventors: Chien Hung LIU, Yu-Sheng CHEN, Yi Ching ONG, Hsien Jung CHEN, Kuen-Yi CHEN, Kuo-Ching HUANG, Harry-HakLay CHUANG, Wei-Cheng WU, Yu-Jen WANG
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Patent number: 11967594Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.Type: GrantFiled: August 10, 2022Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Lo Heng Chang, Chien Ning Yao, Kuo-Cheng Chiang, Chih-Hao Wang
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Patent number: 11961840Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.Type: GrantFiled: August 9, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11961763Abstract: Devices and methods that a first gate structure wrapping around a channel layer disposed over the substrate, a second gate structure wrapping around another channel layer disposed over the substrate and a dielectric fin structure formed over a shallow trench isolation (STI) feature and between the first and second gate structures. At least one metallization layer is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure.Type: GrantFiled: April 7, 2021Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jia-Chuan You, Kuan-Ting Pan, Shi Ning Ju, Kuo-Cheng Chiang, Chih-Hao Wang
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Patent number: 11961900Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.Type: GrantFiled: May 24, 2021Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuo-Cheng Chiang, Teng-Chun Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11961913Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain feature on a semiconductor fin structure, a first isolation structure surrounding the semiconductor fin structure, source/drain spacers on the first isolation structure and surrounding a lower portion of the source/drain feature, a dielectric fin structure adjoining and in direct contact with the first isolation structure and one of the source/drain spacers, and an interlayer dielectric layer over the source/drain spacers and the dielectric fin structure and surrounding an upper portion of the source/drain feature.Type: GrantFiled: April 21, 2023Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Chiang, Shi-Ning Ju, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11961915Abstract: A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The first source/drain epitaxial structure has a concave bottom surface contacting the back-side source/drain contact.Type: GrantFiled: March 24, 2022Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shi Ning Ju, Chih-Hao Wang, Kuo-Cheng Chiang, Kuan-Lun Cheng, Wen-Ting Lan
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Publication number: 20240120402Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.Type: ApplicationFiled: November 19, 2023Publication date: April 11, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
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Publication number: 20240113195Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.Type: ApplicationFiled: February 22, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20240112959Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Kuan-Ting PAN, Zhi-Chang LIN, Yi-Ruei JHAN, Chi-Hao WANG, Huan-Chieh SU, Shi Ning JU, Kuo-Cheng CHIANG
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Publication number: 20240113199Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.Type: ApplicationFiled: February 7, 2023Publication date: April 4, 2024Inventors: Jia-Chuan YOU, Chia-Hao Chang, Kuo-Cheng Chiang, Chin-Hao Wang
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Patent number: 11948973Abstract: A method of forming a semiconductor device includes forming semiconductor strips protruding above a substrate and isolation regions between the semiconductor strips; forming hybrid fins on the isolation regions, the hybrid fins comprising dielectric fins and dielectric structures over the dielectric fins; forming a dummy gate structure over the semiconductor strip; forming source/drain regions over the semiconductor strips and on opposing sides of the dummy gate structure; forming nanowires under the dummy gate structure, where the nanowires are over and aligned with respective semiconductor strips, and the source/drain regions are at opposing ends of the nanowires, where the hybrid fins extend further from the substrate than the nanowires; after forming the nanowires, reducing widths of center portions of the hybrid fins while keeping widths of end portions of the hybrid fins unchanged, and forming an electrically conductive material around the nanowires.Type: GrantFiled: August 16, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Chiang, Huan-Chieh Su, Shi Ning Ju, Kuan-Ting Pan, Chih-Hao Wang
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Patent number: 11948970Abstract: A semiconductor device includes a semiconductor fin, a gate structure, and a dielectric isolation plug. The semiconductor fin extends along a first direction above a substrate and includes a silicon germanium layer and a silicon layer over the silicon germanium layer. The gate structure extends across the semiconductor fin along a second direction perpendicular to the first direction. The dielectric isolation plug extends downwardly from a top surface of the silicon layer into the silicon germanium layer when viewed in a cross section taken along the first direction.Type: GrantFiled: December 2, 2019Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuo-Cheng Ching, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11948987Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.Type: GrantFiled: September 9, 2020Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11948839Abstract: The present disclosure describes a method to reduce power consumption in a fin structure. For example, the method includes forming a first and a second semiconductor fins on a substrate with different heights. The method also includes forming insulating fins between and adjacent to the first and the second semiconductor fins. Further, the method includes forming a first and second epitaxial stacks with different heights on each of the first and second semiconductor fins.Type: GrantFiled: November 1, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuo-Cheng Ching, Chih-Hao Wang, Kuan-Lun Cheng
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Publication number: 20240105719Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Inventors: Kuo-Cheng Ching, Huan-Chieh Su, Zhi-Chang Lin, Chih-Hao Wang