Abstract: The present invention provides a method of removing oxides. First, a substrate having the oxides is loaded into a reaction chamber, which includes a susceptor setting in the bottom portion of the chamber, a shower head setting above the susceptor, and a heater setting above the susceptor. Subsequently, an etching process is performed. A first thermal treatment process is then carried out. Finally, a second thermal treatment process is carried out, and a reaction temperature of the second thermal treatment process is higher than a reaction temperature of the first thermal treatment process.

Abstract: A method for fabricating a metal silicide film is described. After providing a silicon material layer, a metal alloy layer is formed to cover the silicon material layer. A thermal process is performed to form a metal alloy silicide layer in a self-aligned way. A wet etching process is performed by using a cleaning solution including sulfuric acid and hydrogen peroxide to remove the residual metals and unreacted metal alloy.

Abstract: A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed.

Abstract: A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.

Abstract: A method of curing a porous low-k layer is described, which is applied to a substrate with a porous low-k layer formed thereon, wherein the porous low-k: layer contains a porogen. A first UV-curing treatment is performed to the porous low-k layer under a relatively milder condition, and then a second UV-curing treatment is performed to the porous low-k layer under a relatively harsher condition to finish the curing of the porous low-k layer.

Abstract: A dual damascene process starts with providing a substrate having thereon a base layer, a lower copper wiring inlaid into the base layer, and a lower cap layer covering the inlaid lower copper wiring. A dielectric layer is deposited on the lower cap layer. A TEOS-based oxide cap layer is deposited on the dielectric layer. The TEOS-based oxide cap layer has a carbon content lower than 1×1019 atoms/cm3. A metal hard mask is deposited on the TEOS-based oxide cap layer. A trench recess is etched into the metal hard mask and the TEOS-based oxide cap layer. A partial via feature is then etched into the TEOS-based oxide cap layer and the dielectric layer through the trench recess. The trench recess and partial via feature are etch transferred into the underlying dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the lower copper wiring.

Abstract: A copper damascene process includes providing a substrate having a dielectric layer thereon, forming at least a copper damascene structure in the dielectric layer, performing a heat treatment on the substrate, and performing a reduction plasma treatment on a surface of the copper damascene structure. The impurities formed in the copper damascene process are removed by the heat treatment, therefore the copper damascene structure is completely reduced by the reduction plasma treatment and is improved.

Abstract: A method of improving adhesion property of a dielectric layer is provided. A dielectric layer is formed over a substrate. A plasma surface process comprising a plasma gas containing helium or hydrogen is performed to treat the surface of the dielectric layer. A cap layer is formed on the dielectric layer.

Abstract: A method for fabricating a porous low-k dielectric film includes providing a substrate, performing a first CVD process by providing a back-bone precursor to form an interface dielectric layer, performing a second CVD process by providing a porogen precursor to form a back-bone layer, and removing the porogens in the back-bone layer so that the back-bone layer becomes an ultra low-k dielectric layer. The interface dielectric layer and the ultra low-k dielectric layer compose a porous low-k dielectric film.

Abstract: A dual damascene process starts with providing a substrate having thereon a base layer, a lower copper wiring inlaid into the base layer, and a lower cap layer covering the inlaid lower copper wiring. A dielectric layer is deposited on the lower cap layer. A TEOS-based oxide cap layer is deposited on the dielectric layer. The TEOS-based oxide cap layer has a carbon content lower than 1×1019 atoms/cm3. A metal hard mask is deposited on the TEOS-based oxide cap layer. A trench recess is etched into the metal hard mask and the TEOS-based oxide cap layer. A partial via feature is then etched into the TEOS-based oxide cap layer and the dielectric layer through the trench recess. The trench recess and partial via feature are etch transferred into the underlying dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the lower copper wiring.

Abstract: A method of restoring a low-k material is described, applied to a substrate with a low-k material thereon, wherein the substrate has been subject to a previous process that raised the k-value of the low-k material. The method includes performing a plasma treatment to the low-k material to decrease the k-value thereof.

Abstract: A dielectric layer overlying a substrate is prepared. A damascene opening is etched into the dielectric layer. The damascene opening is filled with copper or copper alloy. A surface of the copper or copper alloy is treated with hydrogen-containing plasma such as H2 or NH3 plasma. The treated surface of the copper or copper alloy then reacts with trimethylsilane or tertramethylsilane under plasma enhanced chemical vapor deposition (PECVD) conditions. Subsequently, by PECVD, a silicon carbide layer is in-situ deposited on the copper or copper alloy.

Abstract: A manufacturing method of interconnect is provided. A dielectric layer is provided. A metal layer is formed in the dielectric layer. A fluorine-containing barrier layer is formed on the dielectric layer and covers the metal layer. The fluorine-containing barrier layer is formed by using chemical deposition method and introducing fluorine to the film in-situ.

Abstract: A dielectric layer overlying a substrate is prepared. A damascene opening is etched into the dielectric layer. The damascene opening is filled with copper or copper alloy. A surface of the copper or copper alloy is treated with hydrogen-containing plasma such as H2 or NH3 plasma. The treated surface of the copper or copper alloy then reacts with trimethylsilane or tertramethylsilane under plasma enhanced chemical vapor deposition (PECVD) conditions. Subsequently, by PECVD, a silicon carbide layer is in-situ deposited on the copper or copper alloy.

Abstract: A non-circular workpiece carrier, which includes a wheel-like carrier body, and at least one carriage, wherein the wheel-like carrier body has a transmission unit disposed around the periphery thereof, which receives a transmission power for causing the wheel-like carrier body to turn round, and at least one carrier unit; the at least one carriage is respectively disposed in the at least one carrier unit to hold non-circular workpiece, and forced to gyrate in the at least one carrier unit relative to the wheel-like carrier body, enabling loaded non-circular workpiece to be surface-processed (ground, polished, etc.) more evenly. Different carriages are alternatively used with the carrier body subject to the shapes of workpiece to be processed.