Patents by Inventor Kuo-Ching Huang
Kuo-Ching Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11696521Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: GrantFiled: July 27, 2020Date of Patent: July 4, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Publication number: 20230197847Abstract: The present disclosure relates to a method for forming a ferroelectric memory device. The method includes forming a dielectric layer over a semiconductor substrate and forming a first conductive layer over the dielectric layer. The first conductive layer has a first overall electronegativity. A ferroelectric layer is formed on the first conductive layer. The ferroelectric layer has a second overall electronegativity less than or equal to the first overall electronegativity. A second conductive layer is formed on the ferroelectric layer. The second conductive layer has a third overall electronegativity greater than or equal to the second overall electronegativity. The second conductive layer, the ferroelectric layer, and the first conductive layer are etched to form a polarization switching structure. An ILD layer is formed over the polarization switching structure, and a planarization process is performed on the ILD layer. A first conductive via is formed over the polarization switching structure.Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Patent number: 11631810Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.Type: GrantFiled: April 19, 2021Date of Patent: April 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Patent number: 11594632Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: GrantFiled: December 10, 2020Date of Patent: February 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Publication number: 20230011305Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes one or more interconnect wires and vias arranged within one or more interconnect dielectric layers over a substrate. Further, a bottom electrode is disposed over the one or more interconnect wires and vias and comprises a first material having a first work function. A top electrode is disposed over the bottom electrode and comprises a second material having a second work function. The first material is different than the second material, and the first work function is different than the second work function. An anti-ferroelectric layer is disposed between the top and bottom electrodes.Type: ApplicationFiled: March 9, 2022Publication date: January 12, 2023Inventors: Kuen-Yi Chen, Yi-Hsuan Chen, Yi Ching Ong, Kuo-Ching Huang
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Publication number: 20220415883Abstract: The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.Type: ApplicationFiled: January 7, 2022Publication date: December 29, 2022Inventors: Yi Ching Ong, Kuen-Yi Chen, Yi-Hsuan Chen, Kuo-Ching Huang, Harry-Hak-Lay Chuang
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Publication number: 20220384724Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: ApplicationFiled: August 4, 2022Publication date: December 1, 2022Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Patent number: 11315931Abstract: An embedded transistor for an electrical device, such as a DRAM memory cell, and a method of manufacture thereof is provided. A trench is formed in a substrate and a gate dielectric and a gate electrode formed in the trench of the substrate. Source/drain regions are formed in the substrate on opposing sides of the trench. In an embodiment, one of the source/drain regions is coupled to a storage node and the other source/drain region is coupled to a bit line. In this embodiment, the gate electrode may be coupled to a word line to form a DRAM memory cell. A dielectric growth modifier may be implanted into sidewalls of the trench in order to tune the thickness of the gate dielectric.Type: GrantFiled: July 29, 2020Date of Patent: April 26, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Ting, Chun-Yang Tsai, Kuo-Ching Huang
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Patent number: 11107528Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.Type: GrantFiled: October 28, 2020Date of Patent: August 31, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Publication number: 20210242400Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.Type: ApplicationFiled: April 19, 2021Publication date: August 5, 2021Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Publication number: 20210135105Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: ApplicationFiled: July 27, 2020Publication date: May 6, 2021Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Patent number: 10985316Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnect layers arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnect layers. A lower surface of the bottom electrode includes a material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. A reactivity reducing layer contacts the lower surface of the bottom electrode. The reactivity reducing layer has a second electronegativity that is greater than or equal to the first electronegativity.Type: GrantFiled: March 20, 2019Date of Patent: April 20, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Publication number: 20210098630Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: ApplicationFiled: December 10, 2020Publication date: April 1, 2021Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Publication number: 20210043257Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.Type: ApplicationFiled: October 28, 2020Publication date: February 11, 2021Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Patent number: 10879391Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: GrantFiled: May 7, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Patent number: 10879309Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a control device arranged within a substrate and having a terminal. A first memory device is coupled between the terminal of the control device and a first bit-line. A second memory device is coupled between the terminal of the control device and a second bit-line.Type: GrantFiled: September 25, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yang Tsai, Kuo-Ching Huang, Tong-Chern Ong
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Patent number: 10879310Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may include forming a control device within a substrate. A first plurality of interconnect layers are formed within a first inter-level dielectric (ILD) structure over the substrate. A first memory device and a second memory device are formed over the first ILD structure. A second plurality of interconnect layers are formed within a second ILD structure over the first ILD structure. The first plurality of interconnect layers and the second plurality of interconnect layers couple the first memory device and the second memory device to the control device.Type: GrantFiled: September 25, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yang Tsai, Kuo-Ching Huang, Tong-Chern Ong
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Patent number: 10861547Abstract: In some embodiments, the present disclosure relates to a method of operation a resistive random access memory (RRAM) cell, comprising the performing of a reset operation to the RRAM cell. A first voltage bias is applied to the RRAM cell. The first voltage bias has a first polarity. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance. The intermediate resistance is greater than the low resistance. A second voltage bias is then applied to the RRAM cell. The second voltage bias has a second polarity that is opposite to the first polarity. The application of the second voltage bias induces the RRAM cell to have a high resistance. The high resistance is greater than the intermediate resistance.Type: GrantFiled: May 21, 2019Date of Patent: December 8, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Publication number: 20200372955Abstract: In some embodiments, the present disclosure relates to a method of operation a resistive random access memory (RRAM) cell, comprising the performing of a reset operation to the RRAM cell. A first voltage bias is applied to the RRAM cell. The first voltage bias has a first polarity. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance. The intermediate resistance is greater than the low resistance. A second voltage bias is then applied to the RRAM cell. The second voltage bias has a second polarity that is opposite to the first polarity. The application of the second voltage bias induces the RRAM cell to have a high resistance. The high resistance is greater than the intermediate resistance.Type: ApplicationFiled: May 21, 2019Publication date: November 26, 2020Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Publication number: 20200357927Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: ApplicationFiled: May 7, 2019Publication date: November 12, 2020Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen