Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.

Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and |HEB|>|Hc|.

Abstract: An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from ?0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.

Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.

Abstract: A semiconductor device package includes a substrate, electrical components disposed on the substrate, and a conductive frame disposed on the substrate. The conductive frame includes a top portion including at least one opening, a rim connected to the top portion and surrounding the electrical components, and a compartment extending from the top portion of the conductive frame and separating one or more of the electrical components from others of the electrical components. The semiconductor device package further includes an electromagnetic interference shield in contact with the top portion and the rim of the conductive frame.

Abstract: A semiconductor device package includes a substrate, electrical components disposed on the substrate, and a conductive frame disposed on the substrate. The conductive frame includes a top portion including at least one opening, a rim connected to the top portion and surrounding the electrical components, and a compartment extending from the top portion of the conductive frame and separating one or more of the electrical components from others of the electrical components. The semiconductor device package further includes an electromagnetic interference shield in contact with the top portion and the rim of the conductive frame.

Abstract: A semiconductor device package includes a substrate, a first electrical component, a second electrical component, and a conductive frame disposed on a top surface of the substrate. The conductive frame has a top portion and a rim substantially perpendicular to the top portion. The conductive frame covers the first electrical component, and includes at least one opening in the top portion of the conductive frame, one of which openings exposes the second electrical component. A top surface of the top portion of the conductive frame is substantially coplanar with a top surface of the second electrical component. The semiconductor device package further includes an electromagnetic interference shield in contact with the top surface of the top portion of the conductive frame, an outer lateral surface of the rim of the conductive frame, and the top surface of the second electrical component.

Abstract: A semiconductor device package includes a substrate, a first electrical component, a second electrical component, and a conductive frame disposed on a top surface of the substrate. The conductive frame has a top portion and a rim substantially perpendicular to the top portion. The conductive frame covers the first electrical component, and includes at least one opening in the top portion of the conductive frame, one of which openings exposes the second electrical component. A top surface of the top portion of the conductive frame is substantially coplanar with a top surface of the second electrical component. The semiconductor device package further includes an electromagnetic interference shield in contact with the top surface of the top portion of the conductive frame, an outer lateral surface of the rim of the conductive frame, and the top surface of the second electrical component.

Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Abstract: A method of resource allocation in a server system includes predicting a resource requirement of an application by adopting a neural network algorithm. When the resource requirement of the application is greater than a virtual machine allocation threshold, turn on a virtual machine for the application and adjust the value of the virtual machine allocation threshold to be the sum of the virtual machine allocation threshold and a resource capacity of the virtual machine.

Abstract: A digital signage system, includes: a gateway device, coupled to a network; at least one first hot spot, including: an adaptor box, coupled to the gateway device, downloading a content transmitted through the network via the gateway device; a first access point device, coupled to the gateway device, downloading a service on the network via the gateway device; and a display device, coupled to the adaptor box, displaying the content through the adaptor box, and at least one second hot spot, including: a second access point device, coupled to the gateway device, downloading the service via the gateway device, wherein the first access point device and the second access point device provide the service to at least one mobile terminal through wireless communication.

Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Abstract: A digital signage system, includes: a gateway device, coupled to a network; at least one first hot spot, including: an adaptor box, coupled to the gateway device, downloading a content transmitted through the network via the gateway device; a first access point device, coupled to the gateway device, downloading a service on the network via the gateway device; and a display device, coupled to the adaptor box, displaying the content through the adaptor box, and at least one second hot spot, including: a second access point device, coupled to the gateway device, downloading the service via the gateway device, wherein the first access point device and the second access point device provide the service to at least one mobile terminal through wireless communication.