Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Abstract: An image sensor is provided. The image sensor includes: a plurality of photoelectric elements for receiving an incident light. The photoelectric elements are arranged into a plurality of unit cells, and each of the unit cells includes a first photoelectric element and a second photoelectric element. The first photoelectric element in each of the unit cells captures a first pixel in a first phase, and the second photoelectric element in each of the unit cells captures a second pixel in a second phase, wherein the first phase is different from the second phase.

Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Abstract: An image sensor is provided. The image sensor includes a microlens array having a plurality of microlenses; and a sensor array having a plurality of photoelectric elements that are arranged into a plurality of macro pixels. Each macro pixel includes a first photoelectric element, a second photoelectric element, a third photoelectric element, and a fourth photoelectric element that receive incident light via a first microlens, a second microlens, a third microlens, and a fourth lens in the plurality of microlenses. The first microlens, the second microlens, the third microlens, and the fourth microlens in each macro pixel have a first initial offset, a second initial offset, a third initial offset, and a fourth initial offset, respectively. The first microlens and the second microlens in each of the plurality of macro pixels further have a first additional offset and a second additional offset, respectively.

Abstract: An image sensor includes a sensing layer, a number of filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the sensing layer and surrounding each of the filter units. The grid structure includes a first partition wall disposed on the sensing layer and located between two adjacent filter units, and a second partition wall disposed on the first partition wall located between the two adjacent filter units. The refractive index of the first partition wall is less than the refractive index of the second partition wall.

Abstract: An image sensor is provided. The image sensor includes a microlens array having a plurality of microlenses; and a sensor array having a plurality of photoelectric elements that are arranged into a plurality of macro pixels. Each macro pixel includes a first photoelectric element, a second photoelectric element, a third photoelectric element, and a fourth photoelectric element that receive incident light via a first microlens, a second microlens, a third microlens, and a fourth lens in the plurality of microlenses. The first microlens, the second microlens, the third microlens, and the fourth microlens in each macro pixel have a first initial offset, a second initial offset, a third initial offset, and a fourth initial offset, respectively. The first microlens and the second microlens in each of the plurality of macro pixels further have a first additional offset and a second additional offset, respectively.

Abstract: An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

Abstract: An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

Abstract: An image sensor is provided. The image sensor includes: a plurality of photoelectric elements for receiving an incident light. The photoelectric elements are arranged into a plurality of unit cells, and each of the unit cells includes a first photoelectric element and a second photoelectric element. The first photoelectric element in each of the unit cells captures a first pixel in a first phase, and the second photoelectric element in each of the unit cells captures a second pixel in a second phase, wherein the first phase is different from the second phase.

Abstract: An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.

Abstract: An optical sensor includes a sensing layer, a color filter, and a grid structure. The sensing layer includes a photodiode. The color filter includes a lower portion disposed on the sensing layer, and an upper portion disposed on the lower portion. The upper portion includes a bottom surface connected to the lower portion, a first inclined surface inclined relative to the bottom surface, and a second inclined surface that is opposite to the first inclined surface and inclined relative to the bottom surface. The grid structure surrounds the upper portion. Between the first inclined surface and the bottom surface is a first acute angle, and between the second inclined surface and the bottom surface is a second acute angle.

Abstract: An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a photo-sensing element, and the passive layer is disposed over the semiconductor substrate. The light-collecting element is disposed over the passive layer, and includes first, second and third loops. The first loop has a first width. The second loop surrounds the first loop and has a second width that is less than the first width. The third loop surrounds the first and second loops, and has a third width that is less than the second width. The light-collecting element aligns with the photo-sensing element, and the first, second, and third loops include different refractive indices.

Abstract: An optical sensor includes a sensing layer, a color filter, and a grid structure. The sensing layer includes a photodiode. The color filter includes a lower portion disposed on the sensing layer, and an upper portion disposed on the lower portion. The upper portion includes a bottom surface connected to the lower portion, a first inclined surface inclined relative to the bottom surface, and a second inclined surface that is opposite to the first inclined surface and inclined relative to the bottom surface. The grid structure surrounds the upper portion. Between the first inclined surface and the bottom surface is a first acute angle, and between the second inclined surface and the bottom surface is a second acute angle.

Abstract: An image sensor includes a sensing layer, a transparent plate, and a first guided-mode resonance structure. The sensing layer includes sensing units configured to sense a light beam. The transparent plate is located above the sensing layer. The first guided-mode resonance structure is disposed on a first area of the transparent plate, and blocks a first waveband of the light beam from passing through.

Abstract: The present invention provides an image sensor, including: a sensor array layer formed of a plurality of normal sensor units and a plurality of spectrometer sensor units; a first guided mode resonance (GMR) structure having a first grating pitch and disposed on the sensor array layer to cover N (where N is an integer) of the spectrometer sensor units; a second GMR structure having a second grating pitch and disposed on the sensor array layer to cover N of the spectrometer sensor units; and a plurality of color filter units disposed on the sensor array layer to cover the normal sensor units.

Abstract: An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a photo-sensing element, and the passive layer is disposed over the semiconductor substrate. The light-collecting element is disposed over the passive layer, and includes first, second and third loops. The first loop has a first width. The second loop surrounds the first loop and has a second width that is less than the first width. The third loop surrounds the first and second loops, and has a third width that is less than the second width. The light-collecting element aligns with the photo-sensing element, and the first, second, and third loops include different refractive indices.

Abstract: An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

Abstract: An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

Abstract: An image sensor includes a sensing layer, a transparent plate, and a first guided-mode resonance structure. The sensing layer includes sensing units configured to sense a light beam. The transparent plate is located above the sensing layer. The first guided-mode resonance structure is disposed on a first area of the transparent plate, and blocks a first waveband of the light beam from passing through.

Abstract: The present invention provides an image sensor, including: a sensor array layer formed of a plurality of normal sensor units and a plurality of spectrometer sensor units; a first guided mode resonance (GMR) structure having a first grating pitch and disposed on the sensor array layer to cover N (where N is an integer) of the spectrometer sensor units; a second GMR structure having a second grating pitch and disposed on the sensor array layer to cover N of the spectrometer sensor units; and a plurality of color filter units disposed on the sensor array layer to cover the normal sensor units.