Abstract: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

Abstract: For 0.18 micron technology, it is common practice to use silicon oxynitride as an anti-reflective layer for defining the via etch patterns. It has however been found that, using current technology, residual particles of oxynitride get left behind. The present invention solves this problem by subjecting the surface from which the silicon oxynitride was removed to a high pressure rinse of an aqueous solution that includes a surfactant such as tetramethyl ammonium hydroxide or isopropyl alcohol. These surfactants serve to modify the hydrophobic behavior of the silicon oxynitride particles so that they no longer cling to the surface.

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.

Abstract: A new method is provided for polishing, using methods of Chemical Mechanical Polishing, of copper surfaces, particularly where these surface are adjacent to the surface of a layer of barrier material comprising TaN. The invention provides for reducing the chemical force early in the polishing process by adding DIW during the early polishing phase and for additional control of the chemical force during the polishing process by controlling the pH of the slurry applied during polishing, especially for polishing the interface between interconnect copper and barrier material TaN.

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.