Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.

Abstract: The invention discloses a switching device for a pixel electrode of display device. The switching device comprises a gate formed on a substrate; a gate-insulating layer formed on the gate; a first buffer layer formed between the substrate and the gate and/or between the gate and the gate-insulating layer, wherein the first buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy; a semiconductor layer formed on a portion of the gate-insulating layer; and a source and a drain formed on a portion of the semiconductor layer.

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

Abstract: The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.

Abstract: The invention discloses a switching element for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A high-k dielectric layer is formed on the gate. The high-k dielectric layer comprises HfO2, HfNO, HfSiO, HfSiNO, or HfAlO. A semiconductor layer is formed on the high-k dielectric layer. A source and a drain are formed on a portion of the semiconductor layer.

Abstract: The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.

Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.

Abstract: A thin film transistor (TFT) is disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first adhesion layer, a gate insulting layer, a semiconductor layer, and a source electrode and a drain electrode. The gate electrode is formed on the substrate, and the gate electrode is made of silver. The first adhesion layer is formed between the substrate and the gate electrode. A gate insulating layer is formed on the gate electrode. The semiconductor layer is formed on the gate insulating layer. The source electrode and the drain electrode are formed on parts of the semiconductor layer. Accordingly, the reliable TFT is provided through having the Ag metal with low resistivity and good adhesion characteristics.

Abstract: The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) material layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/drain.

Abstract: The present invention disclosed a method and apparatus for removing a SiC or a low k dielectric film, wherein the SiC or low k dielectric film is deposited on a substrate. The method comprising: Process the low k dielectric film or SiC film with high temperature oxidation, such as wet oxidation or dry oxidation, to transform the film into an oxide film layer, then remove the oxide film layer by wet etching. The present invention also disclosed an apparatus to perform the process, comprising: a high temperature processing unit such as a high temperature furnace, and a wet etching unit such as a wet bench or a single wafer spin etching processor. These units may form as a single apparatus, a cluster tool or separate tools.