Abstract: A light emitting device includes a substrate, a wall, at least one light emitting chip, a protection layer, and a reflection layer. The substrate has a mounting surface. The wall is disposed on the mounting surface and has an inner side surface. An accommodation space is defined by the inner side surface and the mounting surface. The light emitting chip has a top light emitting surface and a side light emitting surface, and is disposed in the accommodation space and on the mounting surface. The protection layer is disposed on the top light emitting surface and the side light emitting surface. A gap is formed between the protection layer and the wall. The reflection layer is disposed in the accommodation space and between the inner side surface and the side light emitting surface. The reflection layer is filled in the gap and contacts the mounting surface.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A semiconductor assembly includes a substrate, a retaining wall, a light emitting unit, and a reflective layer. The substrate has a mounting surface. The retaining wall is disposed on the mounting surface and has an inner surface. An accommodation space is defined by the inner surface and the mounting surface. The light emitting unit is disposed in the accommodation space and disposed on the mounting surface. The light emitting unit has an upper light emitting surface and a side light emitting surface. The reflective resin layer is disposed in the accommodation space and disposed between the inner surface and the side light emitting surface. The reflective resin layer contains a based resin, a UV absorber, and reflective particles.

Abstract: A light sensing module includes a substrate, a light sensing unit, a first light-transmissive component, and a light shielding layer. The light sensing unit is disposed on the substrate to sense an intensity of a working light beam, and has an upper light receiving surface and a lateral surface perpendicular to the upper light receiving surface. The first light-transmissive component covers the light sensing unit, and has a first refractive index between a refractive index of the light sensing unit and a refractive index of air. The light shielding layer surrounds the lateral surface and is covered by the first light-transmissive component.

Abstract: A light emitting device including a lighting unit and a conversion material is disclosed. The conversion material is configured to convert a part of the invisible light emitted from the lighting unit into a visible light, which indicates that the lighting unit is in operation. The spectral energy of visible light is less than 20% of the spectral energy measured within a wavelength range of 200 nm to 380 nm.

Abstract: A light sensing module and an electronic device using the same are provided. The light sensing module includes a substrate, a light sensing unit, a first light-transmissive component and a blocking wall. The light sensing unit is disposed on the substrate to sense an intensity of a working light beam. The first light-transmissive component covers the light sensing unit, and has a first refractive index that is between a refractive index of the light sensing unit and a refractive index of air. The blocking wall is disposed on the substrate, and surrounds the light sensing unit and the first light-transmissive component.

Abstract: A method of manufacturing the light emitting package structure is provided. The method includes: a preparation process: mounting a light emitting unit on a substrate; a dispensing process: coating a sealant on a first joint area of the substrate; a cover-enclosing process: disposing a cover element having a second joint area on the substrate, the first joint area and the second joint area joined to each other by the sealant; a vacuum process: reducing an ambient pressure to a first pressure lower than the original ambient pressure; a pressure-adjusting process: adjusting the ambient pressure around the package structure to a second pressure higher than the first pressure; and a curing process: curing the sealant.

Abstract: A light emitting package structure and a method of manufacturing the light emitting package structure are provided. The method includes: a preparation process: mounting a light emitting unit on a substrate; a dispensing process: coating a sealant on a first joint area of the substrate; a cover-enclosing process: disposing a cover element having a second joint area on the substrate, the first joint area and the second joint area joined to each other by the sealant; a vacuum process: reducing an ambient pressure to a first pressure lower than the original ambient pressure; a pressure-adjusting process: adjusting the ambient pressure around the package structure to a second pressure higher than the first pressure; and a curing process: curing the sealant.

Abstract: A package structure is provided. The package structure includes a substrate, a pair of electrodes, a lighting unit, a wall, and a package compound. The pair of electrodes and the wall are disposed on the substrate, and the wall and the substrate jointly define an accommodating space. The lighting unit is disposed in the accommodating space. The package compound is disposed in the accommodating space such that a top end of the package compound has a W-shaped cross section and the lighting unit is embedded in the package compound.

Abstract: An optical sensor structure is provided. The optical sensor structure includes a substrate, a light sensing unit, a peripheral wall, and a reflective layer. The substrate includes a plurality of metal pads. The light sensing unit is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate define an accommodating space. The metal pads and the light sensing unit are positioned in the accommodating space. The reflective layer is disposed in the accommodating space and surrounds the light sensing unit.

Abstract: A light emitting structure includes a substrate, at least one light emitting chip disposed on the substrate and, a side wall disposed on the substrate and surrounding the at least one light emitting chip, a cover disposed on the side wall, an anti-reflective coating disposed on the cover, and a protective layer disposed on outside of the cover, wherein the cover, the side wall and the substrate define an enclosed space for accommodating the at least one light emitting chip.

Abstract: A light emitting device including a lighting unit and a conversion material is disclosed. The conversion material is configured to convert a part of the invisible light emitted from the lighting unit into a visible light, which indicates that the lighting unit is in operation. The spectral energy of visible light is less than 20% of the spectral energy measured within a wavelength range of 200 nm to 380 nm.

Abstract: A package structure is provided. The package structure includes a substrate, a pair of electrodes, a lighting unit, a wall, and a package compound. The pair of electrodes and the wall are disposed on the substrate, and the wall and the substrate jointly define an accommodating space. The lighting unit is disposed in the accommodating space. The package compound is disposed in the accommodating space such that a top end of the package compound has a W-shaped cross section and the lighting unit is embedded in the package compound.

Abstract: A light-emitting diode (LED) package structure includes a substrate, an LED, a side wall, an encapsulant, and a waterproof protective coating. The LED is disposed on the substrate, the side wall defines a through hole and is disposed on the substrate, and the LED is accommodated in the through hole. The encapsulant is filled in the through hole and covers the LED. A heterojunction is disposed between the encapsulant and the side wall, and the waterproof protective coating seals the heterojunction. Furthermore, the encapsulant includes a first fluoropolymer, the waterproof protective coating includes a second fluoropolymer, and the light transmittance of the first fluoropolymer is greater than that of the second fluoropolymer.

Abstract: An optical sensor structure is provided. The optical sensor structure includes a substrate, a light sensing unit, a peripheral wall, and a reflective layer. The substrate includes a plurality of metal pads. The light sensing unit is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate define an accommodating space. The metal pads and the light sensing unit are positioned in the accommodating space. The reflective layer is disposed in the accommodating space and surrounds the light sensing unit.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A package structure and a method for manufacturing the same are provided. The package structure includes a substrate, a wall, a photonic device, an inner covering layer, and an outer covering layer. The wall is disposed on the substrate, and a space is formed between the substrate and the wall. The photonic device is accommodated in the space and disposed on the substrate. The photonic device includes a p-contact and an n-contact, and a gap is defined between the p-contact and the n-contact. The inner covering layer is disposed in the gap between the p-contact and the n-contact. The outer covering layer is covered on an upper surface of the substrate, an inner surface of the wall, and an outer surface of the photonic device.

Abstract: A package structure is provided. The package structure includes a substrate, an electrode layer, a lighting unit, a wall, and a package compound. The substrate and the wall that is disposed on the substrate jointly define an accommodating space. The lighting unit in the accommodating space and is electrically connected to the electrode layer disposed on the substrate. The package compound covers the electrode layer, and the lighting unit. The package compound includes an attaching portion disposed on a top surface of the lighting unit and a surrounding portion that is arranged around the attaching portion. The surrounding portion has an annular slot arranged on a top surface thereof. A bottom end of the annular slot is located at a position aligning with 25%˜90% of a thickness of the lighting diode along a height direction.