Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.

Abstract: Apparatus, methods, and computer-readable media for facilitating network slice based reselection using machine learning are disclosed herein. An example method for wireless communication at a UE includes predicting a next active PDU session of two or more PDU sessions based on next connection setup times for each PDU session. The next connection setup times may be estimated based on connection setup events occurring over a period. The example method also includes selecting a frequency channel to camp on based on the next active PDU session.

Abstract: The present invention proposes an in-situ freezing machining method for an integrated thin-walled array structure. In the method, the area among cups is cut off first; then, the outer walls of a cup array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cup array is carried out. Then, hoisting and turning over are carried out, and the area among cavities is cut off; then, the outer walls of a cavity array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cavity array is carried out. The method realizes in-situ freezing clamping of workpieces, avoids error accumulation caused by repeated installation of a fixture, and can refrigerate efficiently, suppress ambient and cutting thermal interference, and ensure the stability of freezing fixture.

Abstract: There is provided peptidic compounds of Formula I, A or B(Rradn6-[linker]-RL-Xaa1-Xaa2-Xaa3-Xaa4-Xaa5-Xaa6-Xaa7-Xaa8-?-Xaa9-NH2). Xaa1 is D-Phe, Cpa, D-Cpa, Nal, D-Nal, 2-Nal, or D-2-Nal; Xaa2 is Asn, Gln, Hse, Cit or His. Xaa3 is Trp, Bta, Trp(Me), Trp(7-Me), Trp(6-Me), Trp(5-Me), Trp(4-Me), Trp(2-Me), Trp(7-F), Trp(6-F), Trp(5-F), Trp(4-F), Trp(5-OH), or ?Me-Trp. Xaa4 is Ala or Ser. Xaa5 is Val, Cpg, or Tle. Xaa6 is Gly, NMe-Gly, or D-Ala. Xaa7 is His or NMe-His. Xaa8 is Leu or Phe. Xaa9-NH2 is a C-terminally amidated amino acid residue selected from Pro, 4-oxa-L-Pro, Me2 Thz, or Thz. ? represents a peptide bond or reduced peptide bond joining Xaa8 to Xaa9. Rradn6 is 1-5 radiolabeling groups. There is also provided the use of such compounds as imaging agents or therapeutic agents.

Abstract: A control circuit of a power converter and a control method thereof are provided. The control circuit includes an error amplifier, a controller, a digital filter, and a digital pulse width signal modulator. The error amplifying circuit is coupled to an output terminal of the power converter and provides a digital error signal. The controller provides a first working parameter corresponding to the first external control command when receiving a first external control command. The digital filter generates a current digital compensation value. The digital pulse width signal modulator generates a pulse width modulation signal. The controller provides a second working parameter corresponding to the second external control command when receiving a second external control command. The controller calculates a transition value according to the second working parameter and the current digital compensation value. The controller provides the second working parameter and the transition value to the digital filter.

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may identify an indication of an occurrence of a handover. The UE may adjust a delay used by a buffer based at least in part on the indication of the occurrence of the handover. The UE may process one or more packets of the buffer based at least in part on the adjustment of the delay used by the buffer. Numerous other aspects are described.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: The present invention relates to the treatment of herpes simplex virus (HSV) infection using an anti-HSV antibody. In particular, the anti-HSV antibody specifically binds to the glycoprotein D (gD) of herpes simplex virus-1 (HSV-1) and herpes simplex virus-2 (HSV-2). The treatment of the present invention is effective against drug-resistant and/or recurrent HSV infection.

Abstract: The present invention proposes an in-situ freezing machining method for an integrated thin-walled array structure. In the method, the area among cups is cut off first; then, the outer walls of a cup array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cup array is carried out. Then, hoisting and turning over are carried out, and the area among cavities is cut off; then, the outer walls of a cavity array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cavity array is carried out. The method realizes in-situ freezing clamping of workpieces, avoids error accumulation caused by repeated installation of a fixture, and can refrigerate efficiently, suppress ambient and cutting thermal interference, and ensure the stability of freezing fixture.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive, from a base station, control signaling for communications in a wireless communications system. The control signaling may indicate a first duration for an inactivity timer. The UE may initiate the inactivity timer and a second timer based on identifying a period of inactivity. The second timer may have a second duration that is shorter than the first duration for the inactivity timer. In some examples, the second duration may be based on one or more parameters, such as a display status, a battery status, a scaling factor, the first duration, an application state, or any combination thereof. The UE may release a connection for the communications in the wireless communications system based on an expiration of the second timer, an expiration of the inactivity timer, or a combination thereof.

Abstract: Please replace the abstract originally filed with the following: A display panel and a display device. Because the pixel distribution density in a second display subarea (A12) is lower than that in a first display subarea (A11), the quantities of sub-pixels (pix) connected to scanning lines are not completely the same; a sub-pixel row having the greatest quantity of sub-pixels (pix) in the display panel is taken as a reference sub-pixel row, the quantity of the sub-pixels (pix) of the reference sub-pixel row is taken as a reference value, a sub-pixel row having the quantity of sub-pixels (pix) smaller than the reference value is taken as a compensation sub-pixel row, and a scanning line connected to the compensation sub-pixel row is taken as a first scanning line; the display panel is provided with load compensation units corresponding to at least part of the first scanning lines, and the load compensation units are located in the second display subarea.

Abstract: A variable pressure injection mold, an injected shoe material, and a method for manufacturing the same are provided. The variable pressure injection mold for plastic injection molding includes a mold body and a variable pressure air discharge layer. The mold body has a foam molding space. The variable pressure air discharge layer is arranged on the mold body and is correspondingly exposed to the foam molding space. A plurality of variable pressure pores are provided in the variable pressure air discharge layer and the variable pressure pores connect the foam molding space.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.

Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.

Abstract: The invention provides a nested numerical control rotary table, which comprises a large numerical control rotary table, a small rotary table, a large rotary table board and a small rotary table board nested in the large rotary table board, wherein the small rotary table board may be driven by the large numerical control rotary table as a part of the large rotary table board to run together with the large rotary table board, or be driven by the small rotary table to run independently. When the small rotary table board runs independently, the small rotary table is driven to ascend by a lifting oil cylinder, and a pull pin under the small rotary table board and a positioning pin on the small rotary table fixedly connect the small rotary table board with the small rotary table, which are locked by a clamp. The nested numerical control rotary table may complete the tasks of numerical control rotary tables with both large and small dimensions, which saves the production cost and improves the working efficiency.

Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.