Abstract: A touch input device includes a touch end, a sensing module, and a receiving module. The sensing module includes a sensing unit and a signal operation unit. The sensing unit detects a relative angle between the touch end and a display touch surface to generate a motion signal. The signal operation unit is coupled with the sensing unit and generates a result signal according to the motion signal. The receiving module includes a receiving end and a demodulator unit. The receiving end receives the result signal; the demodulator is coupled with the receiving end, wherein the receiving end transmits the result signal to the demodulator unit, and the demodulator unit generates a function signal according to the result signal.

Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.

Abstract: A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Abstract: A test key structure includes a plurality of transistors formed on a scribe line of a wafer and arranged in a 2*N array having 2 columns and N rows. The transistors arranged in the 2*N array respectively includes a gate, a source, a drain, and a body. All of the sources of the transistors arranged in the 2*N array are electrically connected to each other.

Abstract: The present invention provides a portable optical fiber end face polisher that has a probe, a shuttle, a cover and a resilient actuator. The probe has a driving shaft holding a pin having two through holes. The shuttle holds the driving shaft, a supplying reel and a spooling reel. The cover guides the driving shaft to rotate axially and draws a cleaning medium from the supplying reel to pass through the through holes across a probing face of the pin to the spooling reel. The resilient actuator is mounted between a stopping base of the cover and the shuttle to recover the relative positions of the shuttle and the cover.

Abstract: A method of the measuring a critical dimension of a spacer is provided. The measurement is performed by using several test structures of measuring doping region resistance. Each of the test structure has different space disposed between a first gate line and a second gate line. By measuring a doping region resistance of each test structure, a plot of reciprocal of resistance versus space can be accomplished. Then, making regression of the plot, a correlation can be formed. Finally, a critical dimension of a spacer can be get by extrapolating the correlation back to 0 unit of reciprocal of resistance.

Abstract: A method for image data compression of a to-be-encoded image block includes: determining one of a plurality of preset encoding modes as an encoding mode based upon attributes of pixels of the to-be-encoded image block; and compressing image data of the to-be-encoded image block according to the encoding mode thus determined so as to obtain encoded data.

Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.

Abstract: The present invention provides a portable optical fiber end face polisher that has a probe, a shuttle, a cover and a resilient actuator. The probe has a driving shaft holding a pin having two through holes. The shuttle holds the driving shaft, a supplying reel and a spooling reel. The cover guides the driving shaft to rotate axially and draws a cleaning medium from the supplying reel to pass through the through holes across a probing face of the pin to the spooling reel. The resilient actuator is mounted between a stopping base of the cover and the shuttle to recover the relative positions of the shuttle and the cover.

Abstract: In some embodiments, a stylus device includes two switch mechanisms, one disposed at the stylus tip portion and the other disposed at the stylus end portion. The stylus device also includes a wireless transceiver that allows the stylus device to communicate back to an electronic host device (e.g., an electronic tablet) in response to a user contacting the surface of a host device with the stylus tip portion or the stylus end portion. This enables, for example, a wide range of dual stylus device functions for electronic tablet applications. For example, the stylus device can be used to write and/or draw with the stylus tip portion and then can be flipped to the stylus end portion to erase as a user would generally do with a conventional pencil on paper. In another example, the stylus device can include a marker color tip on the stylus tip portion and a color blender on the stylus end portion.

Abstract: A touch input device includes a touch end, a sensing module, and a receiving module. The sensing module includes a sensing unit and a signal operation unit. The sensing unit detects a relative angle between the touch end and a display touch surface to generate a motion signal. The signal operation unit is coupled with the sensing unit and generates a result signal according to the motion signal. The receiving module includes a receiving end and a demodulator unit. The receiving end receives the result signal; the demodulator is coupled with the receiving end, wherein the receiving end transmits the result signal to the demodulator unit, and the demodulator unit generates a function signal according to the result signal.

Abstract: The present invention provides a touch sensing apparatus including a plurality of pins, a logic control module, and at least one driving/sensing control module. The logic control module generates a plurality of control signals having different control timings. Each driving/sensing control module is coupled with the logic control module and the pins, wherein the driving/sensing control module receives a first control signal of the control signals from the logic control module and controls the pins to execute a plurality of pin functions according to a first control timing of the first control signal, so that the pins simultaneously sense a plurality of analog data from a conductive thin film sensor.

Abstract: A touch sensing apparatus is disclosed. The touch sensing apparatus includes a logic control module, at least one storage control module, and at least one decoding control module. The logic control module is used to generate a plurality of control signals having different control timings. The plurality of control signals includes a storage control signal and a decoding control signal. Each storage control module includes a plurality of storage capacitors, and respectively stores each of sensed voltages in different storage capacitors at different times according to a storage control timing of the storage control signal. The sensed voltages are analog data sensed from scan lines of an ITO sensor. The decoding control module is used to decode the sensed voltages stored in the storage capacitors according to a decoding control timing of the decoding control signal to output the decoded analog data.

Abstract: A multiplexer includes: a first switch unit coupled between a first input terminal and an output terminal and including a series connection of first and second switches; a second switch unit coupled between a second input terminal and the output terminal; and a third switch unit coupled to a third input terminal and a common node between the first and second switches. Different first and second voltages, and a third voltage greater than one of the first and second voltages and less than the other one of the first and second voltage are applied respectively to the first, second and third input terminals. The multiplexer is operable between a first mode, where the first voltage is transmitted to the output terminal, and a second mode, where the second voltage is transmitted to the output terminal and the third voltage is transmitted to the common node between the first and second switches.

Abstract: A touch sensing apparatus is disclosed. The touch sensing apparatus includes a logic control module, at least one storage control module, and at least one decoding control module. The logic control module is used to generate a plurality of control signals having different control timings. The plurality of control signals includes a storage control signal and a decoding control signal. Each storage control module includes a plurality of storage capacitors, and respectively stores each of sensed voltages in different storage capacitors at different times according to a storage control timing of the storage control signal. The sensed voltages are analog data sensed from scan lines of an ITO sensor. The decoding control module performs analog adding process to the sensed voltages stored in the storage capacitors according to a decoding control timing of the decoding control signal to output decoded analog data with high signal-to-noise ratio (SNR).

Abstract: An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.

Abstract: A semiconductor device having a tunable capacitance is disclosed, comprising a substrate, a semiconductor base layer comprising a first semiconductor material having a first band-gap, and a plurality of successive semiconductor layers positioned between the substrate and the semiconductor base layer. The plurality of successive semiconductor layers includes a tuning layer comprising a second semiconductor material having a second band-gap larger than the first band-gap. Furthermore, the tuning layer has a non-uniform doping profile with doping concentration that varies in accordance with distance from a surface of the tuning layer proximal to the semiconductor base layer. The tunable capacitance of the semiconductor device varies in accordance with an applied voltage between the base layer and one of the successive semiconductor layers.

Abstract: A semiconductor device having a tunable capacitance is disclosed, comprising a substrate, a semiconductor base layer comprising a first semiconductor material having a first band-gap, and a plurality of successive semiconductor layers positioned between the substrate and the semiconductor base layer. The plurality of successive semiconductor layers includes a tuning layer comprising a second semiconductor material having a second band-gap larger than the first band-gap. Furthermore, the tuning layer has a non-uniform doping profile with doping concentration that varies in accordance with distance from a surface of the tuning layer proximal to the semiconductor base layer. The tunable capacitance of the semiconductor device varies in accordance with an applied voltage between the base layer and one of the successive semiconductor layers.

Abstract: A voltage multiplying circuit comprising: a first capacitor, comprising a first terminal and a second terminal, wherein the first terminal of the first capacitor is selectively coupled to a first voltage or a second voltage, and the second terminal is selectively coupled to the first voltage or a fourth voltage; a second capacitor, comprising a first terminal and a second terminal, wherein the first terminal of the second capacitor is selectively coupled to the second voltage or the fourth voltage, and the second terminal of the second capacitor is selectively coupled to a third voltage or the fourth voltage; and a third capacitor, comprising a first terminal and a second terminal, wherein the first terminal of the third capacitor is selectively coupled to the second voltage or the fourth voltage, and the second terminal of the third capacitor is selectively coupled to a third voltage or the fourth voltage.

Abstract: A method for image data compression of a to-be-encoded image block includes: determining one of a plurality of preset encoding modes as an encoding mode based upon attributes of pixels of the to-be-encoded image block; and compressing image data of the to-be-encoded image block according to the encoding mode thus determined so as to obtain encoded data.