Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.

Abstract: A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.

Abstract: An external display module is provided, which is adapted to be detachably connected to an electronic device. The external display module includes a module base and a first screen unit. The module base includes a first base side, two first tracks and at least one first slot. The first screen unit is rotatably connected to the module base, wherein the first screen unit includes a first screen, a first shaft, at least one first guiding member and two first blocks, the first shaft is disposed on the edge of the first screen unit, the first guiding member is affixed to the first shaft and is rotated with the first shaft, the first block is connected to the first shaft, the first guiding member is inserted into the first slot and is guided by the first slot, and the first block is adapted to slide in the first track.

Abstract: A notebook computer is provided. The notebook computer includes a device body, a cover and a media unit. The device body includes a first body housing and a second body housing, wherein the second body housing pivots on the first body housing. The cover pivots on the first body housing and is slidably connected to the second body housing. When the cover is rotated from a folded state to an unfolded state relative to the device body, the second body housing is pushed to rotate from the first housing orientation to the second housing orientation relative to the first body housing. The media unit pivots on the first body housing and is slidably connected to the second body housing.

Abstract: The present invention discloses a pollutant generation system. The pollutant generation system includes a pollution source and a pollutant emitter. The pollutant emitter is connected to the pollution source. The pollution source is composed of two gases including air and methane. The flows of the gases are strictly controlled. Then, the gases enter a magnetic bead glass bottle. Due to the disturbance of magnetic beads to the flowing of the gases, the gases are sufficiently disordered, and the two gases are sufficiently mixed by using a spiral tube to generate a uniform and stable pollution source.

Abstract: The invention provides a nested numerical control rotary table, which comprises a large numerical control rotary table, a small rotary table, a large rotary table board and a small rotary table board nested in the large rotary table board, wherein the small rotary table board may be driven by the large numerical control rotary table as a part of the large rotary table board to run together with the large rotary table board, or be driven by the small rotary table to run independently. When the small rotary table board runs independently, the small rotary table is driven to ascend by a lifting oil cylinder, and a pull pin under the small rotary table board and a positioning pin on the small rotary table fixedly connect the small rotary table board with the small rotary table, which are locked by a clamp. The nested numerical control rotary table may complete the tasks of numerical control rotary tables with both large and small dimensions, which saves the production cost and improves the working efficiency.

Abstract: A horizontal five-axis turning plate type machining center includes a support base, a lathe bed arranged on the support base and a column arranged on the support base, wherein the lathe bed and the column are fixedly connected through a connecting arm, a turning plate device is arranged on the support base, an X-direction sliding plate capable of sliding in an X direction on the lathe bed is arranged on a side, facing the column, of the lathe bed, and a third driving unit capable of driving a workbench to perform position conversion between a turning plate and the X-direction sliding plate is arranged on the turning plate.

Abstract: A semiconductor device includes a semiconductor die, an N-doped region, an N-contact metal, a PN junction mesa, a P-contact metal, a first passivation layer, an anode feed metal, and a cathode feed metal. The semiconductor die may include a plurality of semiconductor layers disposed on an insulating substrate. The N-doped region may define an active area of the device. The N-contact metal may be disposed on a first portion of the N-doped region. The PN junction mesa may be disposed on a second portion of the N-doped region. The PN junction mesa may comprise a hyperabrupt N-doping layer disposed on the first portion of the N-doped region and a P-doped layer disposed on the hyperabrupt N-doping layer. The P-contact metal may be disposed on the P-doped layer of the PN junction mesa. The first passivation layer may cover the semiconductor layers of the semiconductor device and have openings for the N-contact metal and the P-contact metal. The anode feed metal may connect the P-contact metal to a first bond pad.

Abstract: A device including a semiconductor die, a first contact, a second contact, a third contact, a first passivation layer, a second passivation layer and an interconnect metal. The semiconductor die may include a plurality of semiconductor layers disposed on a GaAs substrate. The first contact may be electrically coupled to a semiconductor emitter layer. The second contact may be electrically coupled to a semiconductor base layer. The third contact may be electrically coupled to a semiconductor sub-collector layer. The first passivation layer may cover one or more of the semiconductor and the contacts. The first passivation layer may comprise an inorganic insulator. The second passivation layer may comprise an inorganic insulator or organic polymer with low dielectric constant deposited on the passivation layer. The interconnect metal may be coupled to the first contact and separated from the first passivation layer by the second passivation layer.

Abstract: A three dimensional (3D) detection device has a detection supporter base to be disposed on a transmission device, ultrasonic transceiver modules disposed on at least one inner base surface of the detection supporter base and a controller. When a tested object is transmitted by the transmission device and then enters the detection supporter base, the ultrasonic transceiver modules emit ultrasonic signals to the tested object, and the tested object reflects the ultrasonic signals to the ultrasonic transceiver modules. The ultrasonic transceiver modules generate detection signals according to the reflected ultrasonic signals. The detection signals are sent to the controller, and the controller generates an ultrasonic image corresponding to a tested object according to the detection signals, and then compares the ultrasonic image to a pre-established original 3D image, so to achieve a surface detection objective.

Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.

Abstract: Dual operation centrifugal fan apparatus and methods of operating same that may be used, for example, to cool the internal heat-generating components of an information handling system or other device. The dual operation centrifugal fan apparatus may be implemented in one embodiment as a self-cleaning blower apparatus that is operated in a first normal cooling direction to dissipate heat from internal components of an information handling system, and operated in second cleaning direction to reverse airflow and expel accumulated dust from the interior of the information handling system.

Abstract: A bulk acoustic wave (BAW) resonator with better performance and better manufacturability is described. A BAW resonator includes a substrate, a BAW stack disposed over the substrate, a first temperature compensation layer disposed between the substrate and the stack, and a second temperature compensation layer disposed over the stack. The BAW stack includes a piezoelectric layer disposed between a first electrode and a second electrode. A method of making a BAW resonator is also disclosed. The method includes forming a first base layer over a substrate including a layer of sacrificial material and a frame surrounding the layer of sacrificial material, forming a first temperature compensation layer over the first base layer, forming a BAW stack over the first temperature compensation layer, forming a second temperature compensation layer over the BAW stack, and removing the layer of sacrificial material to form a cavity adjacent the base layer.

Abstract: A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.

Abstract: A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.

Abstract: A variable pressure injection mold, an injected shoe material, and a method for manufacturing the same are provided. The variable pressure injection mold for plastic injection molding includes a mold body and a variable pressure air discharge layer. The mold body has a foam molding space. The variable pressure air discharge layer is arranged on the mold body and is correspondingly exposed to the foam molding space. A plurality of variable pressure pores are provided in the variable pressure air discharge layer and the variable pressure pores connect the foam molding space.

Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.

Abstract: A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Abstract: Design and processes are described for fabricating single-crystal bulk acoustic wave resonators with better performance and better manufacturability. A low-acoustic-loss single-crystal piezoelectric layer is epitaxially grown on a substrate, followed with the formation of bottom electrode, metallic cavity frames, and gap filler material on the piezoelectric layer. Matching metallic cavity frames and gap filler material are formed on a second substrate. The two wafers are then bonded together by metal-to-metal bonding of the metallic cavity frames on the first wafer to the matching metallic cavity frame on the second wafer to form a sealed cavity between the bottom electrodes and the second wafer. The first substrate is then removed to expose the piezoelectric layer. This second wafer and the structures thereon are then ready to complete the BAW resonator and filter fabrication using standard wafer processing steps.