Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a buffer layer on the substrate, forming a mesa isolation on the HEMT region, forming a HEMT on the mesa isolation, and then forming a capacitor on the capacitor region. Preferably, a bottom electrode of the capacitor contacts the buffer layer directly.

Abstract: A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.

Abstract: A method of operating a memory cell includes the following steps. A first plurality of bias operations is performed to the memory cell using a first voltage, wherein the memory cell comprises a variable resistance pattern, and the first voltage of each cycle of the first plurality of bias operations has a same first polarity. The memory cell is determined whether reaches a fatigue threshold. After the determination determines that the memory cell reaches the fatigue threshold, a second plurality of bias operations is performed to the memory cell using a second voltage, wherein the second voltage of each cycle of the second plurality of bias operations has a same second polarity, and the second polarity is opposite to the first polarity.

Abstract: An access control management system, access control management method and an image capture device are provided. The access control management system includes an image capture device and a processing device. The image capture device includes: a lens; an image sensor configured to sense a light intensity passing through the lens to generate an image of a subject being captured; an image signal processor (ISP) configured to capture a face image in the generated image, perform a de-identification processing on the face image to obtain de-identified image data, and transform the de-identified image data into multiple de-identified features; and an I/O interface configured to output the de-identified features. The processing device is configured to verify an identity of a user to which the de-identified features belong by a trained deep learning model. The deep learning model is trained by using de-identified features and identities of multiple users registered in advance.

Abstract: A face recognition system and a face recognition method are provided. The face recognition system includes an image capturing device and a processing device. The image capturing device is configured to capture a face image of a user to be recognized, de-identify the face image to obtain de-identified image data, and transform the de-identified image data into multiple de-identified features and output. The processing device is configured to verify an identity of the user to which the de-identified features belong by using a trained machine learning model. The machine learning model is trained by using de-identified features and identities of multiple users registered in advance.

Abstract: Systems and methods for image stabilization of video imagery generated by applications are disclosed. In some embodiments, an Information Handling System (IHS) may include executable instructions to receive a video stream from an application executed on the IHS, identify a level of jitter in the video stream, and process the video stream by re-positioning imagery in the video stream to compensate for the jitter. The instructions may then display the processed video stream on a display. The display displays the processed video stream in place of the video stream generated by the application.

Abstract: A thin film transistor includes a bottom gate, a semiconductor layer, a top gate, a first auxiliary conductive pattern, a source, and a drain. The semiconductor layer includes a first semiconductor region, a second semiconductor region, a first heavily doped region, a second heavily doped region, a third heavily doped region, a first lightly doped region, a second lightly doped region, and a third lightly doped region. The first heavily doped region and the second heavily doped region are respectively located on two sides of the first semiconductor region. Two ends of the second semiconductor region are directly connected to the third heavily doped region and the third lightly doped region, respectively. The top gate is electrically connected to the bottom gate. The source and the drain are respectively electrically connected to the third heavily doped region and the second heavily doped region of the semiconductor layer.

Abstract: A method for fabricating a semiconductor device includes the steps of providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a first mesa isolation on the HEMT region and a second mesa isolation on the capacitor region, forming a HEMT on the first mesa isolation, and then forming a capacitor on the second mesa isolation.

Abstract: A capacitor unit includes a bottom electrode; a raised sub-structure provided on the bottom electrode and having a plurality of trenches exposing the bottom electrode; a first capacitance conductive layer formed on a surface of the raised sub-structure and a surface of the bottom electrode, the first capacitance conductive layer having a substantially uniform thickness; a capacitance insulation layer formed on a surface of the first capacitance conductive layer and having a substantially uniform thickness; and a top electrode covering a surface of the capacitance insulation layer. A side of the top electrode abutting the capacitance insulation layer is extended along the surface of the capacitance insulation layer.

Abstract: A method for forming an isolation structure includes following operations. A trench is formed in a semiconductor substrate. A first insulating layer covering a bottom and sidewalls of the trench is formed. A charge-trapping layer is formed on the first insulating layer. The trench is filled with a second insulating layer. The charge-trapping layer include a material different from those of the first insulating layer and the second insulating layer.

Abstract: A capacitor unit includes a substrate; an insulation layer formed on the substrate; a capacitor stacking structure formed on the insulation layer, and having a first bonding pad, a first conductive portion, a second bonding pad and a second conductive portion; and a first metallic wall and a second metallic wall formed on two opposite sides of the capacitor stacking structure. A capacitor integrated structure includes a wafer; a plurality of capacitor stacking structures arrayed in X-axis direction and Y-axis direction of the wafer to form a matrix on the wafer; a plurality of metallic dividers provided in the X-axis direction of the wafer between adjacent ones of the capacitor stacking structures; and a plurality of insulation dividers provided in the Y-axis direction of the wafer between adjacent ones of the capacitor stacking structures.

Abstract: A pixel array substrate, including multiple pixel structures, multiple data lines, multiple scan line groups, multiple transfer line groups, multiple connection terminal groups, and multiple bridge line groups, is provided. The multiple data lines are electrically connected to the multiple pixel structures and arranged in a first direction. Each scan line group includes multiple scan lines arranged in a second direction. The multiple scan lines of the multiple scan line groups are electrically connected to the multiple pixel structures. Each transfer line group includes multiple transfer lines arranged in the first direction. The multiple transfer lines of each transfer line group are electrically connected to the multiple scan lines of a corresponding scan line group. The bridge line groups are structurally separated. Each bridge line group is electrically connected to a corresponding transfer line group and a corresponding connection terminal group.

Abstract: A noise monitoring apparatus includes a row selection circuit, a direct current (DC) cancellation circuit and an amplifier circuit. The row selection circuit selects a row of a DUT array to be a selected row during a readout period, wherein the selected row comprises a plurality of selected DUTs. The DC cancellation circuit is coupled to unselected DUTs of the DUT array during the readout period, generates a DC current signal based on bias current signals from a group of unselected DUTs and subtract the DC current signal from a first noise signal of the selected DUT to generate a second noise signal. The amplifier circuit is coupled to the plurality of selected DUTs of the selected row during the readout period, and amplifies the second noise signal from each of the selected DUTs to generate an output signal.

Abstract: The present disclosure provides an optical structure and a method for fabricating an optical structure, the method includes forming a light detection region in a substrate, forming an isolation structure at surrounding the light detection region, and forming a primary grid over the isolation structure, including forming a metal layer over the isolation structure, forming a first dielectric layer over the metal layer, and partially removing the metal layer and the first dielectric layer with a first mask by patterning, and forming a secondary grid at least partially surrounded by the primary grid laterally.

Abstract: An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode. The dielectric layer is over the bottom electrode. The antiferroelectric layer is over the dielectric layer. The top electrode is over the antiferroelectric layer.

Abstract: A capacitor integrated structure, a capacitor unit and a manufacturing process thereof are provided. The manufacturing process of capacitor units includes the steps of: forming a plurality of capacitor stacking structures on a substrate having an insulation layer thereon; performing a first cut on insulation dividers provided between the adjacent capacitor stacking structures to form a plurality of recesses that expose first conductive portion and second conductive portion of each of the capacitor stacking structures; filling a metallic material in the recesses to form a plurality of metallic dividers that are electrically connected to the first conductive portion and the second conductive portion of each of the capacitor stacking structures; performing a second cut on the metallic dividers to form a plurality of independent capacitor units; and forming metallic walls on two opposite sides of each of the capacitor units, so as to provide a capacitor unit having two end electrodes.

Abstract: A semiconductor structure includes a semiconductor substrate, an image sensor, and an isolation structure. The isolation structure is adjacent to the image sensor and disposed in the semiconductor substrate. The isolation structure includes a first oxide layer, a second oxide layer over the first oxide layer, and a charge-trapping layer disposed between the first oxide layer and the second oxide layer. The charge-trapping layer includes a material different from those of the first oxide layer and the second oxide layer.

Abstract: A method includes forming a semiconductor layer over a substrate; depositing a first ferroelectric layer over a channel region of the semiconductor layer; depositing a first dielectric layer over the first ferroelectric layer; depositing a second ferroelectric layer over the first dielectric layer; depositing a gate metal layer over the second ferroelectric layer; patterning the gate metal layer, the second ferroelectric layer, the first dielectric layer, and the first ferroelectric layer to form a gate structure; and forming source/drain regions in the semiconductor layer and on opposite sides of the gate structure.

Abstract: An integrated circuit includes a ramp signal generator circuit, a comparator, a counter and a control circuit. The ramp signal generator circuit is configured to generate a ramp reference signal. The comparator configured to compare a pixel output signal and the ramp reference signal thereby generating a comparator output signal. The counter is coupled to the comparator, and configured to be enabled or disabled in response to the comparator output signal. The control circuit coupled to the comparator, and configured to enable or disable the comparator by a first enable signal, the first enable signal generated in response to at least the comparator output signal.