Abstract: An evaluation configuration has a first MOS evaluation stage, an isolation stage, and a bipolar evaluation stage. The isolation stage is connected between the first MOS evaluation stage and the bipolar evaluation stage. The isolation stage isolates the first MOS evaluation stage from the bipolar evaluation stage. The evaluation configuration can reliably detect very small read signals and allows a high integration density.

Abstract: The present invention refers to a field emitter beam source (10) comprising at least one emitter (11); at least one extracting electrode (19) to extract a beam current (IE) from the emitter (11); a current source (12) for providing a predetermined beam current (IE0); a first voltage source (13) for providing a first voltage (UA) between the emitter (11) and the extracting electrode (19) to switch on the beam current (IE); and a first switch (S1) for disconnecting the first voltage source (13). With such a field emitter beam source, the emitter voltage (UE) necessary to emit a predetermined beam current (IE0) can be determined. This in turn enables the field emitter beam source (10) to generate beam current pulses with a fast rise time and a well defined beam current pulse charge Q.

Abstract: This invention relates to a process for stabilising and at the same time phase compatibilising plastics or plastic compositions by incorporating polymeric compounds obtainable by reacting a compound selected from the group consisting of the sterically hindered phenols, sterically hindered amines, lactones, sulfides, phosphites, benzotriazoles, benzophenones and 2-(2-hydroxyphenyl)-1,3,5-triazines, which compounds contain at least one reactive group, with a compatibilisator.

Abstract: A DRAM memory cell having an isolation transistor formed from a bipolar transistor.

Abstract: A circuit is provided for the non-destructive, self-normalizing reading-out of MRAM memory cells. Accordingly, read currents of a memory cell are normalized by currents that are maintained at a voltage at which the size of these currents is independent of the cell content. The circuit has a simple construction and without great expenditure, permits the normalization of a read signal.

Abstract: By heating at above the melting point and/or glass transition point of the polycondensate and adding an aromatic dicyanate; or adding a mixture comprising an aromatic dicyanate and a polyfunctional compound selected from the class of sterically hindered hydroxyphenyl-alkyl-phosphonic esters and monoesters, diphosphonites and secondary aromatic amines; or adding a mixture comprising (i) an aromatic dicyanate, (ii) at least one polyfunctional compound selected from the class of sterically hindered hydroxyphenyl-alkyl-phosphonic esters and monoesters, diphosphonites and secondary amines, and (iii) a difunctional epoxide, it is possible to bring about an increase in the molecular weight and/or viscosity of virgin polycondensate and polycondensate recyclates.

Abstract: A circuit is provided for the non-destructive, self-normalizing reading-out of MRAM memory cells. Accordingly, read currents of a memory cell are normalized by currents that are maintained at a voltage at which the size of these currents is independent of the cell content. The circuit has a simple construction and without great expenditure, permits the normalization of a read signal.

Abstract: The dispersion of additives selected from the group consisting of stabilizers, antistatic agents, nucleating agents, biocides and/or flame retardants in synthetic polymers is improved by the addition of at least one polymeric dispersing or solvating agent having amphiphilic properties. Synthetic polymers stabilized in this manner are distinguished by having excellent stability against oxidative, thermal or light-induced degradation.

Abstract: A polyolefin polymer powder for use in rotational moulding requires the presence of stabilizers, including UV-stabilizers, to prevent degradation during processing and use. Described is a new process for preparing rotomoulding polymer particles comprising (i) obtaining a plurality of polyolefin polymer particles having a mean particle size of 1 to 2000 &mgr;m; (ii) heating a mixture of: A) at least one phenolic antioxidant; B) at least one organic phosphite or phosphonite antioxidant; C) at least one UV-stabiliser selected from Chimassorb 2020, Cyasorb UV 3346, Chimassorb 944, Cyasorb 4042 or Cyasorb 4611; D) a diluent; and optionally E) a metal stearate; to a temperature of between 20 and 200 ° C.; (iii) depositing the mixture onto said polyolefin polymer particles; and optionally (iv) blending a metal stearate to the resulting polyolefin polymer particles if component E was not present in said mixture.

Abstract: A DRAM memory cell having an isolation transistor formed from a bipolar transistor.

Abstract: An evaluation configuration has a first MOS evaluation stage, an isolation stage, and a bipolar evaluation stage. The isolation stage is connected between the first MOS evaluation stage and the bipolar evaluation stage. The isolation stage isolates the first MOS evaluation stage from the bipolar evaluation stage. The evaluation configuration can reliably detect very small read signals and allows a high integration density.

Abstract: Recycled mixtures of plastics, predominantly thermoplastics, as predominantly produced in the household, in commerce and also in industry and useful material collections, can be stabilized against thermooxidative degradation by adding a combination of a sterically hindered phenol with an organic phosphite or phosphonite and an inorganic compound from the series consisting of metal oxides, hydroxides and carbonates.

Abstract: A semiconductor circuit is disclosed which contains a driving circuit which is integrated into a semiconductor substrate of a first conductivity type and includes positive voltage switching transistors for switching positive and/or zero voltage levels and negative switching transistors for switching negative and/or zero voltage levels. In addition, the driving circuit contains a control circuit which is positioned upstream from the driving circuit and is also embodied in the semiconductor substrate, which is connected to a substrate voltage. A negative voltage switching transistor of the driving circuit is configured inside an outer well which is embedded in the semiconductor substrate and is of a second conductivity type which is opposite to the first, and the outer well is connected to a supply voltage.

Abstract: High-density polyethylene (HDPE) which experiences a reduction in molecular weight during processing and is obtainable by means of catalysts of the Ziegler-Natta type can be stabilized against thermo-oxidative degradation by addition of a combination of a sterically hindered phenol and an organic phosphite or phosphonite and calcium oxide.

Abstract: A memory configuration includes a plurality of resistive ferroelectric memory cells. Each of the memory cells includes a selection transistor and a storage capacitor. The selection transistor has a given zone of a first conductivity type. The storage capacitor has a first and a second electrode. The first electrode is supplied with a fixed cell plate voltage, the second electrode is connected to the given zone of the first conductivity type. A source and a drain of a MOS transistor are supplied with the fixed cell plate voltage. The channel of the MOS transistor has a channel length extending over at least two of the memory cells. The given zone of the first conductivity type is connected, via a resistor, to the channel of the MOS transistor such that the given zone is electrically connected to the first electrode of the storage capacitor via the resistor and the MOS transistor.

Abstract: This invention relates to a process for stabilizing and at the same time phase compatibilising plastics or plastic compositions by incorporating polymeric compounds obtainable by reacting a compound selected from the group consisting of the sterically hindered phenols, sterically hindered amines, lactones, sulfides, phosphites, benzotriazoles, benzophenones and 2-(2-hydroxyphenyl)-1,3,5-triazines, which compounds contain at least one reactive group, with a compatibilisator.

Abstract: A memory configuration includes a plurality of resistive ferroelectric memory cells. Each of the resistive ferroelectric memory cells includes a selection transistor and a storage capacitor. The selection transistor has a given zone of a first conductivity type. The storage capacitor has a first electrode and a second electrode. The first electrode is supplied with a fixed cell plate voltage. The second electrode is connected to the given zone of the first conductivity type. A semiconductor body of a second conductivity type opposite the first conductivity type is provided. A line is formed by a highly doped zone of the first conductivity type. The line is supplied with the cell plate voltage. The second electrode of the storage capacitor is connected via the resistor to the line.

Abstract: A circuit for generating a reference voltage for the reading out from and the evaluation of read output signals which are read out with a constant plate voltage from storage cells of a ferroelectric memory via bit lines. In the circuit, a reference voltage device is formed of two reference cells that are subjected to the action of complementary signals. The reference cells can be simultaneously read out in order to generate the reference voltage in a selection and evaluation device.

Abstract: A method for nondestructively reading memory cells of an MRAM memory, which includes steps of: determining a standard resistance of a memory cell at a voltage at which a resistance of the memory cell is independent of a stored content of the memory cell; determining an actual resistance of the memory cell at a voltage at which the resistance of the memory cell is dependent on the stored content of the memory cell; obtaining a normalized actual resistance of the memory cell by dividing the actual resistance by the standard resistance; obtaining a comparison result by comparing the normalized actual resistance with a reference value; and detecting the stored content of the memory cell dependent on the comparison result.

Abstract: This invention relates to a process for stabilizing and at the same time phase compatibilising plastics or plastic compositions by incorporating polymeric compounds obtainable by reacting a compound selected from the group consisting of the sterically hindered phenols, sterically hindered amines, lactones, sulfides, phosphites, benzotriazoles, benzophenones and 2-(2-hydroxyphenyl)-1,3,5-triazines, which compounds contain at least one reactive group, with a compatibilisator.