Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.

Abstract: A water level sensor is closely adhered to a storage tank, and a heat exchanger sterilizing and humidifying apparatus allows the water level sensor to be mounted at the outside of the storage tank, thus having a simple configuration. The water level sensor may include a holder, a cap connected to the holder so as to reciprocate within the holder, a case connected to the cap so as to reciprocate within the holder, a sensor part attached to the case to sense the water level in the storage tank, and a spring located between the holder and the cap, wherein the sensor part mounted at the outside of the storage tank and attached to the case by restoring force of the spring when the storage tank contacts the case may be closely adhered to the storage tank and thus may sense a level of water stored in the storage tank.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: A magnetic substance holding device includes: a first pole piece assembly comprising at least one first pole piece, at least two second pole pieces, and at least two first permanent magnets; a second pole piece assembly comprising at least one third pole piece, at least two fourth pole pieces, and at least two second permanent magnets; a coil; and a control device. The first pole piece assembly and/or the second pole piece assembly is configured to be movable such that they are switched between a first arrangement in which the second faces of the first pole piece assembly are spaced apart from the first faces of the second pole piece assembly, and a second arrangement in which the second faces of the first pole piece assembly come in contact with the first faces of the second pole piece assembly.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: Disclosed is a carbonaceous nanocomposite including: a substrate; a graphene sheet formed on a top surface of the substrate in parallel with the substrate; and a carbonaceous nanomaterial provided on another surface of the graphene sheet, the nanomaterial having an aspect ratio of 2 to 75,000 to make a predetermined angle with the graphene sheet. The carbonaceous nanocomposite according to the present disclosure has excellent adhesivity to the substrate and can be attached to the substrate without undergoing a pasting process. Since a two-directional current flow is generated, the electrical resistance of the graphene and carbon nanotube is considerably reduced. In addition, the graphene allows the carbon nanotube to have a high current density and a high specific surface area, thereby accelerating a redox reaction. The excellent heat-radiating property of the graphene sheet allows fast transfer of heat generated in the carbon nanotube to outside, thereby avoiding degradation of the carbon nanotube.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: A magnetic substance holding device includes: a first pole piece assembly including a first N-pole piece, a first S-pole piece, and a first permanent magnet; a second pole piece assembly including a second N-pole piece, a second S-pole piece, and a second permanent magnet; at least one first coil; at least one second coil; and a control device controlling current applied to the first coil and the second coil so as to control magnetic fluxes passing through the first coil and the second coil, thereby allowing the first pole piece assembly and the second pole piece assembly to switch between the first arrangement and the second arrangement, to control magnetic fluxes passing through the holding faces of the first pole piece assembly and the second pole piece assembly.

Abstract: Disclosed herein is a magnetic substance holding device that minimizes residual magnetism by way of employing structures for minimizing reluctance to magnetic flux flow.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: Disclosed herein is a magnetic substance holding device that minimizes residual magnetism by way of employing structures for minimizing reluctance to magnetic flux flow.

Abstract: Disclosed herein is a magnetic substance holding device that minimizes residual magnetism by way of employing structures for minimizing reluctance to magnetic flux flow.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: Tunable radio frequency (RF) devices, such as phase shifters and filters, are formed by depositing thin film layers on a substrate and patterning the thin film layers by various lithography techniques. A thin film metal layer is patterned to form a plurality of capacitors and inductors, leaving at least two grounding regions that lie closely adjacent the capacitors and inductors. As patterned portions of the grounding regions are electrically isolated from each other. Performance of the devices are improved by electrically bridging the differential potential grounding regions.

Abstract: A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film.

Abstract: A water level sensor is closely adhered to a storage tank, and a heat exchanger sterilizing and humidifying apparatus allows the water level sensor to be mounted at the outside of the storage tank, thus having a simple configuration. The water level sensor may include a holder, a cap connected to the holder so as to reciprocate within the holder, a case connected to the cap so as to reciprocate within the holder, a sensor part attached to the case to sense the water level in the storage tank, and a spring located between the holder and the cap, wherein the sensor part mounted at the outside of the storage tank and attached to the case by restoring force of the spring when the storage tank contacts the case may be closely adhered to the storage tank and thus may sense a level of water stored in the storage tank.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: A water level sensor is closely adhered to a storage tank, and a heat exchanger sterilizing and humidifying apparatus allows the water level sensor to be mounted at the outside of the storage tank, thus having a simple configuration. The water level sensor may include a holder, a cap connected to the holder so as to reciprocate within the holder, a case connected to the cap so as to reciprocate within the holder, a sensor part attached to the case to sense the water level in the storage tank, and a spring located between the holder and the cap, wherein the sensor part mounted at the outside of the storage tank and attached to the case by restoring force of the spring when the storage tank contacts the case may be closely adhered to the storage tank and thus may sense a level of water stored in the storage tank.