Abstract: There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 ?m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for manufacturing an insulating layer which can minimize the degree of warpage caused by polymer shrinkage at the time of curing and secure the stability of a semiconductor chip located therein, and a method for manufacturing a semiconductor package using an insulating layer obtained from the manufacturing method of the insulating layer.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a semiconductor device including: a first semiconductor element fixed onto an adherend by flip-chip connection; an adhesive layer for embedding a space between the adherend and the first semiconductor element and embedding the first semiconductor element; and a second semiconductor element connected to the first semiconductor element via the adhesive layer, wherein the adhesive layer has a predetermined melt viscosity and thixotropic index.

Abstract: The present invention relates to a heating element and a method for manufacturing same, and more specifically, a heating element and a method for manufacturing same is provided, the heating element comprising: an adhesive film; and a conductive heating pattern provided on the adhesive film, wherein the adhesive film has a rate of adhesive force reduction due to an external stimulus of at least 30% with respect to the adhesive force thereof prior to the application of an external stimulus.

Abstract: The present invention relates to an adhesive resin composition for a semiconductor, including: a (meth)acrylate-based resin including a (meth)acrylate-based repeating unit containing an epoxy-based functional group and a (meth)acrylate-based repeating unit containing an aromatic functional group, the (meth)acrylate-based resin having a hydroxyl equivalent weight of 0.15 eq/kg or less; a curing agent including a phenol resin having a softening point of 100° C. or higher; and an epoxy resin, wherein the content of a (meth)acrylate-based functional group containing an aromatic functional group in the (meth)acrylate-based resin is 2 to 40% by weight, an adhesive film for a semiconductor including the above adhesive resin composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive film for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Abstract: The present invention relates to an adhesive film having a thixotropic index at 110° C. of 1.5 to 7.5, which is used for fixing a first semiconductor device and a second semiconductor device, a ratio of an area of said first semiconductor device to an area of said second semiconductor device being 0.65 or less, a method for preparing a semiconductor device using the adhesive film, and a semiconductor device.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.

Abstract: The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

Abstract: The present invention relates to a semiconductor device including: a first semiconductor element fixed onto an adherend by flip-chip connection; an adhesive layer for embedding a space between the adherend and the first semiconductor element and embedding the first semiconductor element; and a second semiconductor element connected to the first semiconductor element via the adhesive layer, wherein the adhesive layer has a predetermined melt viscosity and thixotropic index.

Abstract: The present invention relates to an adhesive resin composition for bonding semiconductors, including: a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups; an epoxy resin having a softening point of more than 70° C.; and a phenol resin having a softening point of more than 105° C., wherein the weight ratio of the (meth)acrylate-based resin is 0.48 to 0.65 relative to the total weight of the (meth)acrylate-based resin, the epoxy resin, and the phenol resin, an adhesive film for semiconductors obtained from the resin composition, a dicing die-bonding film including an adhesive layer that includes the adhesive film for semiconductors, a semiconductor wafer including the dicing die-bonding film, and a dicing method for the semiconductor wafer using the dicing die-bonding film.

Abstract: The present invention relates to a photo-curable and thermo-curable resin composition which can form a DFSR having micro unevenness on the surface without a separate treatment such as plasma treatment and the like and a DFSR. The photo-curable and thermo-curable resin composition includes an acid-modified oligomer having a carboxyl group (—COOH) and a photo-curable unsaturated functional group; a polyimide-based resin; a photo-polymerizable monomer having two or more photo-curable unsaturated functional groups; a thermo-curable binder having a thermo-curable functional group; and a photoinitiator.

Abstract: The present invention relates to an under-fill dam with high detection probability that is composed of a dry film solder resist and provided in the form of a fence around a chip device in order to prevent leaks of an under-fill material filled in a gap between a substrate and the chip device.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a preparation method for a dry film solder resist (DFSR) capable of forming the DFSR having fine unevenness on a surface by a more simplified method, and a film laminate used therein. The preparation method for a dry film solder resist includes forming a predetermined photo-curable and heat-curable resin composition on a transparent carrier film having a surface on which a fine unevenness having an average roughness (Ra) of 200 nm to 2 ?m is formed; laminating the resin composition on a substrate to form a laminated structure in which the substrate, the resin composition, and the transparent carrier film are sequentially formed; exposing the resin composition and delaminating the transparent carrier film; and alkaline-developing the resin composition in a non-exposure part and performing heat-curing.

Abstract: Provided are a photocurable and thermocurable resin composition including: an acid-modified oligomer including an iminocarbonate-based compound containing a carboxyl group and a photocurable unsaturated functional group; a photopolymerizable monomer having two or more photocurable unsaturated functional groups; a thermocurable binder having a thermally curable functional group; a functional filler including one or more selected from the group consisting of carbon allotrope particles having a ceramic compound bound to a surface thereof and heat radiating ceramic particles; and a photoinitiator, and a dry film solder resist manufactured therefrom.

Abstract: The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

Abstract: The present invention relates to an adhesive film for a semiconductor that can more easily bury unevenness such as through wires of a semiconductor substrate or a wire attached to a semiconductor chip and the like, and yet can be applied to various cutting methods without specific limitations to realize excellent cuttability, thus improving reliability and efficiency of a semiconductor packaging process.