Abstract: The present invention relates to a system and method for providing a service of binding information appliances in a home network environment. A system for providing a service of binding two or more information appliances, supporting same or respective control middlewares, in a home network having a home server connected to information appliances is disclosed. The home server includes middlewares and connectors. The middlewares are connected to the information appliances to control the information appliances. The connectors apply standard services between the middlewares to connect the middlewares to each other.

Abstract: A cell array of a flash memory device includes extended source strapping regions. The cell array includes a device isolation layer and active regions. The device isolation layer is formed in a semiconductor substrate, and the active regions are defined by the device isolation layer. Word lines cross over the active regions, and a common source line electrically connects the active regions between two word lines of word line pairs. A source strapping region is defined between the two word lines of the word line pairs. The source strapping region crosses multiple active regions.

Abstract: A driver for driving an STN LCD is disclosed. A preferred embodiment comprises a 3-line output display data for storing display data, an XOR block for finding mismatches between each 3-line output set of the stored display and orthogonal function signals, a decoder block for calculating mismatch numbers, a level shifter block for shifting the data level of the mismatch numbers to another level, and a voltage selector block for selecting a voltage level from 2 levels of voltage. Because data latches and output latches are not necessary, the driver of the present invention achieves significant reduction in the circuit components and chip size without compromising the display quality.

Abstract: A liquid crystal display device includes a lower pad electrode connected to a signal line of a liquid crystal display panel, one or more insulating layers formed on the lower pad electrode, a plurality of minute holes passing through the one or more insulating layers to expose a portion of the lower pad electrode, one or more main contact holes passing through the one or more insulating layers to expose another portion of the lower pad electrode, and an upper pad electrode electrically connected to the lower pad electrode via the minute holes and the one or more main contact holes. An area of the one or more main contact holes is larger than an area of each of the plurality of minute holes.

Abstract: A dialog enhancing method and apparatus to boost formants of dialog zones without changing sound zones includes calculating line spectrum pair (LSP) coefficients based on linear prediction coding (LPC) from an input signal, determining whether voice zones exist in the input signal on the basis of the calculated LSP coefficients, and extracting formants from the LSP coefficients according to whether the voice zones exist, and boosting the formants.

Abstract: A temperature control apparatus used with an audio amp to prevent the audio amp from overheating and noise from being generated by effectively controlling a cooling fan of the audio amp includes a power supply to supply an electrical power, a power amp to amplify an input audio signal using the electrical power supplied from the power supply, a signal detector to detect the amount of the current flowing from the power supply during a predetermined time, a temperature sensor to sense a temperature over a predetermined level generated from the power amp, and a micro controller to control a cooling fan according to the amount of current output from the signal detector and/or the temperature sensed by the temperature sensor.

Abstract: The present invention refers to dental self-curing resin compositions having enhanced mechanical and physical properties. In particular, the present invention relates to dental self-curing resin compositions consisting of (i) a Paste A composition containing the multifunctional prepolymer mixture of 2,2-bis-[4-(2-hydroxy-3-methacryloxypropoxy)phenyl]propane (“Bis-GMA”) and multifunctional prepolymer formed by substituting hydrogen atoms in hydroxyl group with methacrylate groups in the Bis-GMA molecules, and further containing a diluent, an adhesive monomer, a polymerization initiator, a polymerization inhibitor, a light stabilizer, an antioxidant, an inorganic pigment and an inorganic filler; and ii) a Paste B composition containing the same prepolymer mixture in the Paste A composition, and further containing a diluent, an adhesive monomer, a reductant, a polymerization inhibitor, a light stabilizer, an antioxidant, an inorganic pigment and an inorganic filler.

Abstract: A liquid crystal display device, and a fabricating method thereof, with improved bonding of an upper plate to a lower plate. The lower plate includes an organic protective film over an inorganic gate insulating layer that is on a substrate. Channels through the organic protective film expose either metal patterns or the gate insulating layer. A seal coated with a sealant is then placed over the organic protective film and channels. The sealant passes through the channels to the metal patterns or to the gate insulating layer. Bonding of the seal to the lower plate is improved by the sealant that contacts the metal patterns and/or the gate insulating layer. During LCD fabrication, the metal patterns act as etch stops when etching the channels. Alternatively, an etch stop semiconductor layer is placed on the gate insulating film. The etch stops prevent the etching process from exposing the lower substrate.

Abstract: To more effectively remove contaminants from fluid streams, several types of metal precursors can be incorporated onto highly ordered mesoporous molecular sieves, such as SBA-15, without producing of clogging effects within pore structures. Lanthanum and aluminum are the most favorable incorporated metals in terms of their adsorption capacities and fluid velocities. The lanthanum impregnated SBA-15 also has a very strong selectivity for arsenic because its adsorption capacities do not deteriorate even if several other anionic species, such as sulfate and nitrate, are found in high concentrations in the fluid along with any arsenic. As a result, these hybrid materials have many advantages for use in POE/POU applications, among others, due to its rapid and high adsorption capacity, and its high selectivity of arsenic for removal from the fluid stream.

Abstract: A method for utilizing waste rubber materials for construction of turf areas such as golf courses or athletic fields is disclosed. The method involves implementing waste rubber materials as a drainage layer to provide the following benefits: capability of adsorbing contaminants, insulation, and a lightweight construction backfill material. Also, the method involves the use of waste rubber materials as a supporting layer for athletic fields for the resiliency and shock absorption. Secondly, a method for utilizing waste rubber materials for filtration of runoff from turf or vegetated areas is disclosed. The method involves implementing waste rubber materials as a filter medium for adsorption of contaminants from runoff before entering detention ponds, wetlands, or other water bodies.

Abstract: A single-chip column driver for organic light emitting diode (OLED) display is disclosed. Instead of using two column drivers for dual scan, the present invention uses one column driver driving both the upper and the lower OLED panels. The column driver has a two set of output circuitry: one for driving the upper panel and the other for driving the lower panel. The single chip solution of the present invention eliminates the problem of display uniformity without increasing the part count. The invention also enables independent control of RGB without further increasing the part count.

Abstract: A driver for driving an STN LCD is disclosed. A preferred embodiment comprises a 3-line output display data for storing display data, an XOR block for finding mismatches between each 3-line output set of the stored display and orthogonal function signals, a decoder block for calculating mismatch numbers, a level shifter block for shifting the data level of the mismatch numbers to another level, and a voltage selector block for selecting a voltage level from 2 levels of voltage. Because data latches and output latches are not necessary, the driver of the present invention achieves significant reduction in the circuit components and chip size without compromising the display quality.

Abstract: A semiconductor device and a method for fabricating the same, wherein a thick side wall oxide film or polysilicon film is formed on the edge portion of the second silicon substrate. At the side wall of the oxide film or polysilicon film, the thickness of an active semiconductor substrate at its edge portion increases, thereby obtaining an increased threshold voltage at the edge portion. That is, the formation of the side wall oxide film is carried out to prevent a gate oxide film of the semiconductor device from being directly formed on each side wall of the active silicon substrate. As a result, it is possible to prevent a degradation in electrical characteristic due to a degradation in threshold voltage caused by a reduced thickness of the active semiconductor substrate at its edge portion.

Abstract: The present invention provide a method for forming a triple well. The triple well includes an n-well, a first p-well surrounded with the n-well and a second p-well apart from the first p-well and adjacent to the n-well. According to the present invention, only one conductivity type of impurities are implanted in each well. Therefore, it is possible to prevent the decrease of the carrier mobility and increase of the leakage current.

Abstract: A semiconductor device and a method for fabricating the same, wherein a thick side wall oxide film or polysilicon film is formed on the edge portion of the second silicon substrate. At the side wall of the oxide film or polysilicon film, the thickness of an active semiconductor substrate at its edge portion increases, thereby obtaining an increased threshold voltage at the edge portion. That is, the formation of the side wall oxide film is carried out to prevent a gate oxide film of the semiconductor device from being directly formed on each side wall of the active silicon substrate. As a result, it is possible to prevent a degradation in electrical characteristic due to a degradation in threshold voltage caused by a reduced thickness of the active semiconductor substrate at its edge portion.

Abstract: A semiconductor device having a silicon-on-insulator structure, and a method for fabricating the semiconductor device, wherein a thick silicon oxide film is formed on each side wall of an active silicon substrate, thereby obtaining an increased threshold voltage at the edge of the active silicon substrate. The semiconductor device includes a first silicon substrate, a first silicon oxide film formed over the first silicon substrate, a second silicon substrate on the first silicon oxide film, second silicon oxide films, respectively disposed on opposite side walls of the second silicon substrate, a gate oxide film formed on the second silicon substrate, a gate electrode formed over the gate oxide film, and source/drain impurity diffusion regions, respectively formed in portions of the second silicon substrate disposed at both sides of the gate electrode.

Abstract: A sense amplifier comprising a data refresh amplifier for supplying voltages to true and complementary bit lines in response to a first control signal to amplify true and complementary data on the true and complementary bit lines, respectively, a first transistor for amplifying current of the true data on the true bit line in response to a second control signal and transferring the amplified true data to a true input/output line, a second transistor for amplifying current of the complementary data on the complementary bit line in response to the second control signal and transferring the amplified complementary data to a complementary input/output line, a first switch for selectively forming a current path between the true input/output line and the true bit line, and a second switch for selectively forming a current path between the complementary input/output line and the complementary bit line.

Abstract: A fully planarized concave transistor is produced having a structure, wherein a lightly doped drain(LDD) region and a source/drain region are formed and accumulated on a semiconductor substrate in a predetermined pattern, a thick insulating layer is formed on the surface and the sidewall of the source/drain, a gate formed between the source and drain, with a gate insulating layer is formed between the source and the gate, and between the drain and the gate to insulate therebetween.

Abstract: A method for forming contact holes in a semiconductor device, involving formation of a ring-shaped pad at a contact region. The ring-shaped pad is used as an etch barrier film upon forming a contact hole. The use of such a ring-shaped pad enables easy formation of a contact hole with a critical dimension. In accordance with this method, it is possible to increase a process margin upon the formation of contact holes for providing contacts with a critical dimension while maintaining an insulation between neighboring conductors.

Abstract: A sense amplifier comprising a data refresh amplifier for supplying voltages to true and complementary bit lines in response to a first control signal to amplify true and complementary data on the true and complementary bit lines, respectively, a first transistor fox amplifying current of the true data on the true bit line in response to a second control signal and transferring the amplified true data to a true input/output line, a second transistor for amplifying current of the complementary data on the complementary bit line in response to the second control signal and transferring the amplified complementary data to a complementary input/output line, a first switch for selectively forming a current path between the true input/output line and the true bit line, and a second switch for selectively forming a current path between the complementary input/output line and the complementary bit line.