Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: A supplemental charger capable of being combined with a wearable device includes a main body including a strap having opposing ends that are extendable in opposite directions and connectable to each other, coupling parts configured to couple the wearable device to the main body, wherein at least one coupling part is attached to a respective one of the opposing ends of the strap; and a charging unit to charge the wearable device when the wearable device is coupled to the main body.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: A flexible battery may include: a first electrode assembly including one or more unit cells, each having a pair of electrodes with a separator interposed therebetween; a single electrode; and a second electrode assembly connected to the first electrode assembly or to the single electrode and including a single electrode and a separator covering a top and bottom of the single electrode of the second electrode assembly.

Abstract: A flexible battery may include: an electrode assembly having one or more unit cells each of the unit cells including a pair of electrode plates having different polarities, a separator interposed between the respective electrode plates and electrode tabs that protrude from the respective electrode plates; a pair of electrode leads connected to electrode tabs; and a strengthening tab fixed on any one electrode lead connection tab among the electrode tabs.

Abstract: The present disclosure relates to a stent delivery system, and can be configured to include a connector portion connected to an external current source, an electrocautery tip connected to the connector portion by a conductive line, and a delivery portion having one side connected to the electrocautery tip, having the other side connected to the connector portion, and having the conductive line for connecting the electrocautery tip and the connector portion positioned therein, and a stent space portion in which a stent is positioned is formed adjacent to the electrocautery tip inside the delivery portion, and the delivery portion gradually moves and supplies the stent into the human body tissue, and according to the present disclosure, it is possible to integrate the conductive line and the tube, thereby improving the rigidity of the tube, and varying the size of the electrocautery tip.

Abstract: The present disclosure relates to a stent delivery system. According to the present disclosure, it is possible to minimize the current flow distance in the in-body by integrally conducting two poles to the electrocautery tip, thus enhancing the treatment stability.

Abstract: A semiconductor package includes a printed circuit board, a resistor circuit, and first and second semiconductor chips. First and second pads are on a first surface of the printed circuit board, and external connection terminal is on a second surface of the printed circuit board. The resistor circuit has a first connection terminal connected to the first pad and a second connection terminal connected to the second pad. The first semiconductor chip is connected to the first pad and the second semiconductor chip is stacked on the first semiconductor chip and connected to the second pad. The printed circuit board includes a signal transfer line connecting a branch in the printed circuit board to the external connection terminal. A first transfer line connects the branch to the first pad. A second transfer line connects the branch to the second pad.

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Abstract: A semiconductor package includes a printed circuit board, a resistor circuit, and first and second semiconductor chips. First and second pads are on a first surface of the printed circuit board, and external connection terminal is on a second surface of the printed circuit board. The resistor circuit has a first connection terminal connected to the first pad and a second connection terminal connected to the second pad. The first semiconductor chip is connected to the first pad and the second semiconductor chip is stacked on the first semiconductor chip and connected to the second pad. The printed circuit board includes a signal transfer line connecting a branch in the printed circuit board to the external connection terminal. A first transfer line connects the branch to the first pad. A second transfer line connects the branch to the second pad.

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Abstract: Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.