Abstract: In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: To clean contaminants on a substrate including a metal wiring formed thereon, a cleaning solution including diluted aqueous sulfuric acid solution is applied onto the substrate. Mega-sonic energy is applied to the cleaning solution on the substrate. The contaminants are removed from the substrate in accordance with the reaction between the diluted aqueous sulfuric acid solution and the contaminant while the mega-sonic energy is applied to the substrate. The corrosion of the metal wiring is prevented because of the cleaning solution including the diluted aqueous sulfuric acid solution. Additionally, the damage of the substrate is reduced because the mega-sonic energy is appropriately applied to the substrate.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.

Abstract: In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

Abstract: An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

Abstract: A cleaning solution for removing contaminants from the surface of an integrated circuit substrate includes a fluoride reducing agent, an organic acid containing a carboxyl group, an alkaline pH controller and water. The pH of the cleaning solution is 3.5-8.8. The cleaning solution is used at a low temperature, such as room temperature, which is lower than that for conventional cleaning solutions. Therefore, the cleaning solution does not evaporate. Furthermore, a cleaning method using the cleaning solution does not require a pre-ashing step to reinforce the cleaning agent, nor is an alcohol rinse step required. The cleaning solution is removed by rinsing with deionized water. Therefore, the cleaning method using the cleaning solution is quicker and less costly than conventional cleaning methods.

Abstract: A semi-soft handoff method, in accordance with the present invention is described. In the instance a base station makes use of multiple frequency channel, a mobile station moves inter-cell and service on a frequency that processes the present call within the destination cell to be moved to is not offered, to guarantee the call's continuance, the base station examines all adjacent cells' frequency assignment conditions and sets all cells' multiple common frequencies. Furthermore, the base station manages the traffic within a common frequency selected from the multiple common frequencies. After receiving a handoff requirement message, the base station examines for the common frequency with a minimum load. Next, the base station executes an inter-cell inter-frequency hard handoff to the corresponding common frequency and soft handoff to the destination cell by using the common frequency.

Abstract: A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.

Abstract: A code set generating method in a mobile communications system having Nf frequency channels and Np phase channels. In the method, a code length Nc is obtained by Nf×Np, a minimum distance Nd between codewords in a code set and frequency diversity Nfd are determined, code sets are detected according to Nc, Nd, and Nfd, a code set is selected, which shows such a Hamming distance distribution among code words that minimizes demodulation errors from the detected code sets, and the code set is stored in a mapping table of a demodulator.