Abstract: An image quality control system and method is disclosed. At least one infrared camera takes a screen image of a room. When there are a plurality of cameras, images of the cameras are synchronized with respect to time, and a specific object of the image is tracked to estimate image quality of the object. When there are a plurality of cameras, a 3D screen model is reconfigured, and positions of the cameras and the infrared lighting tools are controlled. Infrared lighting and the cameras are controlled, and particularly, optical axis direction, optical magnification, exposure time, and the iris of the camera can be amended. Next, a high-quality object image list can be generated so as to process the images.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna.

Abstract: An electric generator assembly includes an electric generator, a generator support, and two shock-absorbing units. The electric generator includes a generator housing, and a rotor disposed in the generator housing and defining a central axis. The generator support has two sloped flat surfaces that are inclined to a vertical plane, on which the central axis lies. The sloped flat surfaces are disposed at two opposite sides of the vertical plane and face each other in a transverse direction relative to the vertical plane. Each of the shock-absorbing units is secured to a respective one of the sloped flat surfaces and the generator housing so as to provide a shock-absorbing effect to the electric generator.

Abstract: According to one embodiment of the present invention, a substrate-processing apparatus includes: first and second chambers parallel to each other; a plurality of first lift pins disposed in the first chamber, and supporting a first substrate transferred to the first chamber; a plurality of second lift pins disposed in the second chamber, and supporting a second substrate transferred into the second chamber; and a transfer robot transferring the first and second substrates into the first and second chambers. The transfer robot includes first and second blades that simultaneously elevate to transfer the first and second substrates to the upper sides of the first and second lift pins, respectively.

Abstract: A gear-shifting mechanism for vehicles has a crankcase, a gearbox and a reserved room. Because the reserved room is formed between a first case of the crankcase and a body of the gearbox, a shift lever can protrude out of the first case and is mounted into the reserved room to connect to a transmission between the crankcase and the gearbox. Besides, the shift lever also can protrude out of a second case to connect to a transmission opposite to the gearbox. As a result, the shift lever can output in two directions, applicable for the gearbox in left or right of the crankcase. An engine connected to the gear-shifting mechanism can be adapted for various vehicles.

Abstract: A cooling system for a generator of a vehicle has an engine, a generator and a wind collection box. The generator has a rotor driven by the engine and a fan synchronously rotating with the rotor. The wind collection box is connected to the generator via a first guiding tube. The fan draws exterior air from the wind collection box and the first guiding tube to allow the exterior air to flow through the generator. Thus, heat in the generator that is mounted in an airtight engine compartment is dissipated.

Abstract: A cooling system for an exhaust pipe of a vehicle has an engine, an exhaust discharging device connected to the engine, a generator driven by the engine and a cooling guide device. Even when the vehicle is idle, the cooling guide device still guides cool air from the generator to the exhaust discharging device to dissipate heat of the exhaust discharging device. Therefore, the heat of the exhaust discharging device is efficiently dissipated.

Abstract: A control structure is provided for a throttle valve of engine. The throttle valve includes a throttle plate arranged inside the valve body and mounted to a control shaft having an end extending outside the valve body and received in a control seat mounted outside the valve body and having a shaft hole seat, a constraint block, a coupling hole seat, and a cable outlet section. A control assembly includes a return spring and a control rocker arm that includes a connection section forming a connection hole to be fit over the control shaft and a cable connection section, a positioning section, and a push section. The control motor is mounted to the coupling hole seat of the control seat and has a driving rod having a front tip section positioned against the push section of the control rocker arm. The control seat lid is secured to the control seat.

Abstract: A vehicle air intake mechanism comprises an air intake duct having an inlet end opening which opens in an axial direction, and a flow-guiding member having an outer surrounding wall that defines a flow channel in fluid communication with the inlet end opening. The outer surrounding wall has first and second end portions that extend in the axial direction. The first end portion of the outer surrounding wall surrounds an inlet end portion of the air intake duct. The first axial end of the outer surrounding wall defines a first end opening that is in fluid communication with the flow channel and that opens in the axial direction. The inlet end opening is disposed between and is spaced apart from first and second axial ends of the outer surrounding wall in the axial direction.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).

Abstract: A method and apparatus for recognizing a protrusion on a face is proposed. The apparatus forms two images, wherein one is formed in a condition in which a target is lighted and another is formed in a condition in which the target is non-lighted. Face regions are detected from the images respectively and then are compared each other. Then, analyzing change in intensity for indicating change in contrast of the compared regions is performed. Based on the result of the analyzing, it is determined whether there is a protrusion in a face presented in the images.

Abstract: According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna.

Abstract: Method and systems are provided for diagnosing or monitoring a gastric cancer in a subject. Such methods include providing a biological sample from the subject; determining an amount in the sample of at least one biomarker, selected from the group consisting of: CDH17 and OLFM4; and comparing the amount of the at least one biomarker in the sample, if present, to a control level of the at least one biomarker. Such systems include a probe for selectively binding each of at least one biomarker.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).

Abstract: A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate.

Abstract: A substrate processing apparatus includes a chamber defining a creation space where radicals are created and a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas into the creation space, an upper plasma source configured to generate an electric field in the creation space to create the radicals from the first source gas, a second supply member configured to supply a second source gas into the process space, and a lower plasma source configured to generate an electric field in the process space. The upper plasma source includes a first segment and a second segment configured to wrap a side of the chamber. The first and second segments are alternately disposed in the vertical direction of the chamber.

Abstract: A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas.