Abstract: Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.

Abstract: The present invention relates to a circuit and a method for controlling a self-refresh cycle of a dynamic random access memory or DRAM. A cell voltage is directly detected so that a self-refresh cycle can be variably controlled. Detectors each detecting whether or not a voltage charged into a capacitor of a detection cell drops to or below a reference voltage and outputs a detection signal. A pulse generator generates a self-refresh pulse while being linked with an enabled detection signal of the plurality of detectors. A self-refresh cycle can be variably controlled and set to be suitable for the charging capacity of a cell. The detection cell is adapted to the change of the charging capacity of the cell in accordance with a change in temperature.

Abstract: Provided are a low voltage differential signal driver circuit and a method for controlling the same. The differential signal driver circuit includes: a differential amplification signal generator disposed between a power supply voltage terminal and a ground terminal, and outputting first and second differential amplification signals to first and second output terminals in response to first and second differential input signals, respectively; a common mode voltage generator for generating a common mode voltage in response to DC (direct current) offset voltages of the first and second differential amplification signals; and a variable load portion for controlling a resistance between the power supply voltage terminal and the first output terminal and a resistance between the power supply voltage terminal and the second output terminal in response to the common mode voltage such that the first and second differential amplification signals have constant DC offset voltages.

Abstract: Provided is a digital-to-analog converter converting a digital signal into an analog signal. The digital-to-analog converter includes a decoder for selecting a current source from digital inputs, a current switch driver for driving a current switch of the current source, and a random selection switch disposed between the decoder and the current switch driver, and randomly resetting a connection relationship between outputs of the decoder and inputs of the current switch driver every clock. According to the present invention, the linearity of the digital-to-analog converter may be enhanced by changing the current source selected every clock signal to compensate for non-linearity of the digital-to-analog converter according to the spatial arrangement of the current sources.

Abstract: A multiplying digital to analog converter comprising a digital to analog converter having a plurality of capacitors coupled in parallel, applying first signals to the capacitors during a sampling period, and applying second signals to the capacitors during an amplifying period, and an amplifier including a first amplifier electrically coupled to the digital to analog converter; a second amplifier electrically coupled to the first amplifier; and a first switch electrically coupled between an input end and an output end of the second amplifier, being turned off during a sampling period, and being turned off during an amplifying period.

Abstract: The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.

Abstract: Provided are a low voltage differential signal driver circuit and a method for controlling the same. The differential signal driver circuit includes: a differential amplification signal generator disposed between a power supply voltage terminal and a ground terminal, and outputting first and second differential amplification signals to first and second output terminals in response to first and second differential input signals, respectively; a common mode voltage generator for generating a common mode voltage in response to DC (direct current) offset voltages of the first and second differential amplification signals; and a variable load portion for controlling a resistance between the power supply voltage terminal and the first output terminal and a resistance between the power supply voltage terminal and the second output terminal in response to the common mode voltage such that the first and second differential amplification signals have constant DC offset voltages.

Abstract: A multiplying digital to analog converter comprising a digital to analog converter having a plurality of capacitors coupled in parallel, applying first signals to the capacitors during a sampling period, and applying second signals to the capacitors during an amplifying period, and an amplifier including a first amplifier electrically coupled to the digital to analog converter; a second amplifier electrically coupled to the first amplifier; and a first switch electrically coupled between an input end and an output end of the second amplifier, being turned off during a sampling period, and being turned off during an amplifying period.

Abstract: Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.

Abstract: The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.

Abstract: There is provided an adaptive loop gain control circuit for a voltage-controlled oscillator (VCO). The adaptive loop gain control circuit for a voltage-controlled oscillator (VCO) includes a detected voltage generating unit which generates a detected voltage signal according to changes in an operating voltage and an operating temperature, and a control circuit unit which outputs an oscillation control current signal according to the detected voltage signal and an input control voltage signal. The adaptive loop gain control circuit for a voltage-controlled oscillator (VCO) compensates for an oscillation control current according to changes in operating voltage and temperature and compensates for the gain of a phase locked loop (PLL) system, thereby ensuring high operating stability in the PLL circuit.

Abstract: Provided is a phase-change element capable of operating with low power consumptions and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is disposed opposite to the first electrode, and a memory layer made of a phase-change material located contacts the side surfaces of the first electrode and the second electrode.

Abstract: There is provided an adaptive loop gain control circuit for a voltage-controlled oscillator (VCO). The adaptive loop gain control circuit for a voltage-controlled oscillator (VCO) includes a detected voltage generating unit which generates a detected voltage signal according to changes in an operating voltage and an operating temperature, and a control circuit unit which outputs an oscillation control current signal according to the detected voltage signal and an input control voltage signal. The adaptive loop gain control circuit for a voltage-controlled oscillator (VCO) compensates for an oscillation control current according to changes in operating voltage and temperature and compensates for the gain of a phase locked loop (PLL) system, thereby ensuring high operating stability in the PLL circuit.

Abstract: The present invention relates to a current cell driving circuit in a digital-to-analog converter. The current cell driving circuit limits the potential of differential control signals to a given potential level by means of a voltage limiter using a parasitic capacitance of a transistor. Therefore, the present invention can effectively limit the potential of differential control signals DP and DN without compromising the power consumption and the circuit area and also can minimize the transfer time.

Abstract: The present invention relates to a current cell driving circuit in a digital-to-analog converter. The current cell driving circuit limits the potential of differential control signals to a given potential level by means of a voltage limiter using a parasitic capacitance of a transistor. Therefore, the present invention can effectively limit the potential of differential control signals DP and DN without compromising the power consumption and the circuit area and also can minimize the transfer time.