Abstract: Provided is a transformer-based oscillator which is suited to oscillate frequencies in multiple bands. An oscillator includes a transformer resonance unit and a plurality of complementary transistors. The transformer resonance unit includes a primary coil and a secondary coil corresponding to the primary coil. The plurality of complementary transistors have gates and drains between which both ends of the transformer resonance unit are respectively connected. Thus, the oscillator may operate in a differential mode or common mode according to the phase of the transformer resonance unit. Also, a complementary transistor constituting a multiband oscillation loop may be independently connected to both ends of the transformer resonance unit, and an oscillation loop of at least one band may be selected out of a multiband oscillation loop using a switch unit. Thus, the oscillator may be suited to oscillate resonance frequencies in multiple bands.

Abstract: A semiconductor memory device includes a repair control signal generation unit configured to compare a repair target address programmed corresponding to a repair target memory cell with an external address, and generate a repair control signal. an address decoding unit configured to control a normal memory cell or a redundancy memory cell corresponding to the external address to be accessed in response to the repair control signal and an internal active signal, and an activation interval detection unit configured to generate an interval detection signal by detecting a time interval between an activation timing of the repair control signal and an activation timing of the internal active signal in a test operation mode.

Abstract: A multi-bit test control circuit includes an operation unit, a delay unit, and a generation unit. The operation unit is configured to combine a single source signal inputted to each bank with a delay signal generated by delaying the source signal by a certain time to generate a first pulse signal. The delay unit is configured to delay the first pulse signal by a certain time. The generation unit is configured to combine an output signal of the operation unit with an output signal of the delay unit to generate a second pulse signal for a bank interleaving multi-bit test.

Abstract: An LC voltage-controlled oscillator (VCO) is provided. The LC VCO includes an LC resonant circuit including at least one inductor whose both terminals are connected to output nodes and at least one capacitor connected in parallel with the inductor, and an amplifier circuit including at least one pair of switching transistors. Here, drains of the pair of switching transistors are connected to the output nodes respectively, and gates of the switching transistors are connected with the drains through a variable capacitance block exhibiting different characteristics according to an input signal.

Abstract: Provided is a spread spectrum clock generating circuit. The spread spectrum clock generating circuit includes: a phase detector receiving a reference frequency signal from the external and detecting a phase difference between the reference frequency signal and a frequency-divided signal; a voltage controlled oscillator outputting an oscillation signal corresponding to a detection result of the phase detector; a main divider generating the frequency-divided signal by dividing a frequency of the oscillation signal by a main dividing ratio; and a dividing ratio controller generating a variable count value, generating a sub dividing ratio by performing delta-sigma modulation according to the count value, and adjusting the main dividing ratio according to the sub dividing ratio.

Abstract: A semiconductor package includes a memory controller chip, a plurality of first memory chips configured to store normal data, a second memory chip configured to store error information for correcting or detecting error of the normal data, and an interface unit configured to interface the memory controller chip, the plurality of first memory chips, and the second memory chip.

Abstract: A fuse circuit includes a plurality of fuse cells, an amplification unit, and a plurality of registers. The amplification unit is configured to sequentially amplify data stored in the fuse cells. The registers are configured to sequentially store data amplified by the amplification unit.

Abstract: A semiconductor memory device includes banks of unit cells, wherein two or more adjacent banks of the banks share a redundancy circuit configured to perform a defect repair operation when an address for accessing a defective unit cell is input.

Abstract: Provided is a PLL circuit including automatic frequency control circuit and an operating method thereof. The voltage controlled oscillator is primarily controlled by an automatic frequency control circuit, and is secondarily controlled by a loop filter. The voltage controlled oscillator outputs a coarsely-tuned oscillation signal when primarily controlled, and outputs a finely-tuned oscillation signal when secondarily controlled. The PLL circuit can have a quick frequency fixing time, and output the oscillation signal having a broad and stable frequency. Moreover, the noise characteristic of the PLL circuit is enhanced.

Abstract: A semiconductor memory device includes a first memory bank and a second memory bank and a common write driver configured to drive write data to an activated memory bank of the first memory bank and the second memory bank. The common write driver of the semiconductor memory device includes a common write control block configured to generate common drive control signals corresponding to write data, and a common write drive block configured to drive transmission lines of a first memory bank or transmission lines of a second memory bank that are selected by a bank selection signal in response to the common drive control signals.

Abstract: A control circuit for a read operation of a SERDES (SERializer and DESeriallizer) type semiconductor memory apparatus is disclosed that includes a first line driver configured to output a portion of a output signals from sense amplifier according to a first delay signal; a second line driver configured to output a rest of the output signals from the sense amplifier according to a second delay signal; and a first delay unit configured to output a second delay signal synchronized with a clock to the second line driver.

Abstract: The present invention relates to a circuit and a method for controlling a self-refresh cycle of a dynamic random access memory or DRAM. A cell voltage is directly detected so that a self-refresh cycle can be variably controlled. Detectors each detecting whether or not a voltage charged into a capacitor of a detection cell drops to or below a reference voltage and outputs a detection signal. A pulse generator generates a self-refresh pulse while being linked with an enabled detection signal of the plurality of detectors. A self-refresh cycle can be variably controlled and set to be suitable for the charging capacity of a cell. The detection cell is adapted to the change of the charging capacity of the cell in accordance with a change in temperature.

Abstract: A semiconductor memory device includes a repair control signal generation unit configured to compare a repair target address programmed corresponding to a repair target memory cell with an external address, and generate a repair control signal. an address decoding unit configured to control a normal memory cell or a redundancy memory cell corresponding to the external address to be accessed in response to the repair control signal and an internal active signal, and an activation interval detection unit configured to generate an interval detection signal by detecting a time interval between an activation timing of the repair control signal and an activation timing of the internal active signal in a test operation mode.

Abstract: Provided is a ring oscillator having an extended range of oscillation frequency by varactors coupled to delay cells even in a simple structure. The wide frequency range results from simply varying an oscillation frequency by control signals applied to the varactors. Since additional switches connected to the delay cells contribute to increase or decrease of the oscillation frequency range, the ring oscillator can conveniently be employed in various types of oscillation systems.

Abstract: A control circuit for a read operation of a SERDES (SERializer and DESeriallizer) type semiconductor memory apparatus is disclosed that includes a first delay unit that is configured to generate and output a first delay signal to a first global input/output line driver by receiving a sensing-enable signal ‘IOSTB’, and to generate and output a second delay signal to a second global input/output line driver by receiving the sensing-enable signal. The first delay unit generates the second delay signal by delaying the sensing-enable signal in synchronization with a clock. The semiconductor memory apparatus also includes a second delay unit configured to generate a pipe latch control signal in response to the first delay signal and the second delay signal.

Abstract: Provided are a lock detection circuit and a lock detecting method. The lock detection circuit includes two delay devices, four flip-flops and two logic gates, and can accurately detect a lock state of a phase locked loop (PLL) circuit. Therefore, the lock detection circuit can be implemented in a simple structure, and as a result, the lock detection circuit can be compact in size and can consume less electric power. Also, the lock detecting method enables lock detection process to be simpler, so that a lock state can be detected within a short time period.

Abstract: A semiconductor memory device including an information storage unit comprising a fuse configured to store information, a control unit configured to control a node of a blown fuse to become a floating state in response to a control pulse signal, and an output unit configured to output the information.

Abstract: A sensing enable signal control circuit determines a driving timing of an I/O sense amplifier based on a read-out result of data, which is stored in a dummy cell of a semiconductor memory apparatus. The sensing enable signal control circuit in a semiconductor memory apparatus includes a detection code generating unit configured to output a detection code according to a voltage level of dummy cell data, which are read out from a dummy cell through at least one read operation, in response to a column select enable signal, and a multiplexer configured to receive the detection code and a default code and output a delay code to delay a sensing enable signal.

Abstract: A semiconductor memory device includes a first bank including a plurality of cell matrices a second bank including a plurality of cell matrices and a shared-fuse set, which is shared by the first and second banks, configured to output a defect indication signal when the first bank or the second bank is enabled and a defective cell matrix is included in the enabled bank.

Abstract: A phase-locked loop (PLL) circuit including a voltage-controlled oscillator (VCO) with a variable gain is provided. A phase frequency detector (PFD) detects a phase difference between a reference signal and a PLL feedback signal. A charge pump and a loop filter sequentially process an output signal of the PFD. A VCO has different gains according to a mode transition. A control voltage applied to the VCO is selected from an output signal of the loop filter and an additional control signal according to the mode transition.