Abstract: A substrate transfer system includes a substrate transfer chamber between a substrate receiving port and a process chamber, the substrate transfer chamber providing a space for transferring a substrate between the substrate receiving port and the process chamber, and an ionizer within the substrate transfer chamber, the ionizer including a light source to irradiate electromagnetic waves having a predetermined radiation angle toward the substrate to eliminate static electricity of the substrate.

Abstract: An electrostatic chuck assembly, including an electrostatic chuck on which a substrate is loaded; a channel that provides a flow passage for coolant in the electrostatic chuck, the channel having a first opening at a first end corresponding to a center of the substrate and a second opening at a second end corresponding to an edge of the substrate; and a valve box to control a flow direction of the coolant in the channel, the valve box including a first supply valve to control an introduction of the coolant into the first opening; a first return valve to control a drainage of the coolant from the second opening; a second supply valve to control an introduction of the coolant into the second opening; and a second return valve to control a drainage of the coolant from the first opening.

Abstract: Provided are methods and systems for managing semiconductor manufacturing equipment. A method may include preventive maintenance involving steps of disassembling, cleaning, and assembling parts of a chamber. The assembling of the parts may include checking whether the parts are correctly assembled, using reflectance and absorptivity of a high-frequency voltage applied to the parts.

Abstract: Disclosed is an apparatus for processing a semiconductor and a method for generating a seasoning process of a reaction chamber. The method may include generating plasma in the reaction chamber using a production process recipe, obtaining at least one reference measurement value related to a byproduct of the generated plasma, performing a plurality of seasoning tests on the chamber to obtain a plurality of test results, generating an empirical model by forming at least one relational expression correlating variables manipulated during the performing of the plurality of seasoning tests to the plurality of test results, and estimating a seasoning process by using the at least one relational expression to estimate at least one estimated calculation value.

Abstract: A plasma shielding member may include a body having a first surface and a second surface that are opposite to each other, and a plurality of through holes each extending from the first surface to the second surface; a narrower portion of a respective through hole formed at one end of each of the through holes; and/or a wider portion of the respective through hole formed at another end of each of the through holes. A plasma shielding member may include a body including a plurality of through holes that extends from a first surface of the body toward a second surface of the body. Each of the through holes may be defined by a narrower portion of the body at a first end of the respective through hole, and by a wider portion of the body at a second end of the respective through hole.

Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

Abstract: A method of controlling process distribution of a semiconductor process includes receiving process distribution data representing the process distribution of the semiconductor process, receiving a parameter related to the process distribution, generating a virtual metrology model corresponding to the process distribution based on a relationship between the process distribution data and the parameter, and modifying a process variable affecting the process distribution based on the virtual metrology model.

Abstract: Methods for optimizing a plasma process are provided. The method may include obtaining a measurement spectrum from a plasma reaction in a chamber, calculating a normalized measurement standard and a normalized measurement spectrum of the measurement spectrum, comparing the normalized measurement spectrum with a normalized reference spectrum, and comparing the normalized measurement standard with a normalized reference standard to determine whether to change a process parameter of the plasma process or clean the chamber when the normalized measurement spectrum and the normalized reference spectrum are mismatched.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: Methods for optimizing a plasma process are provided. The method may include obtaining a measurement spectrum from a plasma reaction in a chamber, calculating a normalized measurement standard and a normalized measurement spectrum of the measurement spectrum, comparing the normalized measurement spectrum with a normalized reference spectrum, and comparing the normalized measurement standard with a normalized reference standard to determine whether to change a process parameter of the plasma process or clean the chamber when the normalized measurement spectrum and the normalized reference spectrum are mismatched.

Abstract: A method of controlling process distribution of a semiconductor process includes receiving process distribution data representing the process distribution of the semiconductor process, receiving a parameter related to the process distribution, generating a virtual metrology model corresponding to the process distribution based on a relationship between the process distribution data and the parameter, and modifying a process variable affecting the process distribution based on the virtual metrology model.

Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: Disclosed is an apparatus for processing a semiconductor and a method for generating a seasoning process of a reaction chamber. The method may include generating plasma in the reaction chamber using a production process recipe, obtaining at least one reference measurement value related to a byproduct of the generated plasma, performing a plurality of seasoning tests on the chamber to obtain a plurality of test results, generating an empirical model by forming at least one relational expression correlating variables manipulated during the performing of the plurality of seasoning tests to the plurality of test results, and estimating a seasoning process by using the at least one relational expression to estimate at least one estimated calculation value.

Abstract: Provided is a method for controlling a plasma apparatus. The method includes measuring a plasma spectrum in a plasma chamber by an optical emission spectroscopy, setting a baseline of the measured plasma spectrum, normalizing the measured plasma spectrum by dividing a value of the measured plasma spectrum by a value of the baseline, and controlling the plasma chamber by setting parameters of a plasma process using the normalized plasma spectrum. A plasma apparatus is also provided.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: A method of monitoring a semiconductor process is provided. The method includes preparing a process chamber including first and second electrodes spaced apart from and facing each other, and connecting the first electrode to a ground and connecting the second electrode to a radio frequency power source. An impedance in the process chamber is measured using a voltage value and a current value at the second electrode. The consumption amount of consumables in the process chamber is checked using the impedance. Varied process conditions are adjusted within an initial set range.

Abstract: A method of selecting a sensor in a semiconductor manufacturing process is provided. The method includes measuring responses of a plurality of sensors when a first of a plurality of process conditions is varied, identifying one or more of the sensors having a steady state response after the first of the process conditions is varied, and selecting a sensor having a highest value within a response range from among the sensors having the steady state response for the first process condition that is varied. This methodology may be performed for multiple different process conditions. Thus, when process conditions in multiple processes of manufacturing a semiconductor device are varied, sensors having a steady state response can be selected from among multiple sensors for detecting abnormalities in the processes.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: In a cleaning apparatus and a method of cleaning a chamber used in manufacturing a semiconductor device, a first plasma may be provided into a chamber to remove a first residue from an inner wall of the chamber where the first residue is attached. A second plasma may then be provided into the chamber to remove a second residue formed by the first plasma from an inside of the chamber where the second residue remains. The second residue formed by the first plasma used to clean the chamber may not pollute a semiconductor substrate located in the chamber.