Patents by Inventor Kye Hyun Baek

Kye Hyun Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of processing semiconductor substrate responsive to a state of chamber contamination
    Publication number: 20070020780
    Abstract: In one embodiment, a method of processing a semiconductor substrate includes measuring a state of a processing chamber contamination before processing each semiconductor substrate. A process condition is then changed responsive to the state of chamber contamination to compensate for an influence of the state of chamber contamination on the process condition. If the change in process condition is outside of predetermined margin, a warning may be generated and the process may be stopped.
    Type: Application
    Filed: March 7, 2006
    Publication date: January 25, 2007
    Inventors: Kye-Hyun Baek, Chang-Jin Kang, Gyung-Jin Min, Yong-Jin Kim
  • Method for minimizing variation in etch rate of semiconductor wafer caused by variation in mask pattern density
    Patent number: 6686289
    Abstract: In a method for minimizing a variation in an etch rate of a semiconductor wafer caused by a variation in a mask pattern density, the method includes determining a reference amount of an etch gas for a reference mask pattern density, obtaining an optimized amount of the etch gas for a mask pattern density different from the reference mask pattern density, wherein the optimized amount is obtained by the following equation: ( the ⁢   ⁢ reference ⁢   ⁢ amount ⁢   ⁢ for ⁢   ⁢ the ⁢
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: February 3, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventor: Kye Hyun Baek
  • Method for minimizing variation in etch rate of semiconductor wafer caused by variation in mask pattern density
    Publication number: 20030013308
    Abstract: In a method for minimizing a variation in an etch rate of a semiconductor wafer caused by a variation in a mask pattern density, the method includes determining a reference amount of an etch gas for a reference mask pattern density, obtaining an optimized amount of the etch gas for a mask pattern density different from the reference mask pattern density, wherein the optimized amount is obtained by the following equation: 1 ( the ⁢   ⁢ reference ⁢   ⁢ amount ⁢   ⁢ for ⁢   ⁢ the ⁢   ⁢ reference ⁢   ⁢ mask ⁢   ⁢ pattern density ) × ( 1 - the ⁢   ⁢ mask ⁢   ⁢ pattern ⁢   ⁢ density ) ( 1 - the ⁢   ⁢ reference ⁢   ⁢ mask ⁢   ⁢ pattern ⁢   ⁢ density ) ,
    Type: Application
    Filed: January 9, 2002
    Publication date: January 16, 2003
    Applicant: Hynix Semiconductor Inc.
    Inventor: Kye Hyun Baek
  • PLASMA ETCHING METHOD FOR SEMICONDUCTOR DEVICE AND ETCHING APPARATUS OF THE SAME
    Publication number: 20020137340
    Abstract: A plasma etching method for a semiconductor apparatus and an etching apparatus of the same are disclosed.
    Type: Application
    Filed: December 29, 1998
    Publication date: September 26, 2002
    Inventors: KIL-HO KIM, KYE-HYUN BAEK