Patents by Inventor Kyle Bothe

Kyle Bothe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PACKAGED ELECTRONIC CIRCUITS HAVING MOISTURE PROTECTION ENCAPSULATION AND METHODS OF FORMING SAME
    Publication number: 20190326230
    Abstract: A packaged electronic circuit includes a substrate having an upper surface, a first metal layer on the upper surface of the substrate, a first polymer layer on the first metal layer opposite the substrate, a second metal layer on the first polymer layer opposite the first metal layer, a dielectric layer on the first polymer layer and at least a portion of the second metal layer and a second polymer layer on the dielectric layer.
    Type: Application
    Filed: April 24, 2018
    Publication date: October 24, 2019
    Inventors: Kyle Bothe, Dan Namishia, Fabian Radulescu, Scott Sheppard
  • BURIED SOURCE SCHOTTKY BARRIER THIN TRANSISTOR AND METHOD OF MANUFACTURE
    Publication number: 20170250287
    Abstract: A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a channel connecting the buried source contact to the drain, the channel made of ZnO; and a Schottky source barrier formed between the source contact and the channel; and a gate; wherein the source contact is positioned below the channel.
    Type: Application
    Filed: May 16, 2017
    Publication date: August 31, 2017
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Douglas Barlage, Alex Ma, Manisha Gupta, Kyle Bothe, Kenneth Cadien, Amir Afshar
  • BURIED SOURCE SCHOTTKY BARRIER THIN FILM TRANSISTOR AND METHOD OF MANUFACTURE
    Publication number: 20160315196
    Abstract: A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a channel connecting the buried source contact to the drain, the channel made of ZnO; and a Schottky source barrier formed between the source contact and the channel; and a gate; wherein the source contact is positioned below the channel.
    Type: Application
    Filed: December 4, 2014
    Publication date: October 27, 2016
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Douglas Barlage, Alex Ma, Manisha Gupta, Kyle Bothe, Kenneth Cadien, Amir Afshar