Abstract: A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.

Abstract: A nonvolatile memory device and a method of fabricating the same are disclosed. The method includes forming a tunnel oxide film and a conductive film for a floating gate on a semiconductor substrate; nitriding the top surface of the conductive film for a floating gate; oxidizing the nitrided top surface of the conductive film for a floating gate that is nitrided, forming an ONO film comprising a lower oxide film, a nitride film and an upper oxide film sequentially laminated on the surface-modified conductive film for a floating gate to complete formation of the dielectric film; and forming the conductive film for a control gate on the dielectric film.

Abstract: A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.

Abstract: The present invention disclosed herein is a semiconductor capacitor and a method for fabricating the same. A semiconductor capacitor with multitiered metal oxide layers, including at least one metal oxide layer, wherein oxygen ions are implanted therein using a rapid thermal oxidation process in the presence of oxygen gars. Consequently, a capacitor with an improved leakage current characteristic of a dielectric layer is formed.

Abstract: A capacitor and a method of forming the same are provided. The capacitor includes a lower electrode, a first hafnium oxide layer formed on the lower electrode, a tantalum oxide layer formed on the hafnium oxide layer, a second hafnium oxide layer formed on the tantalum oxide layer and an upper electrode formed on the second hafnium oxide layer.

Abstract: A method of forming a capacitor of a semiconductor device is provided. In the method, a capacitor lower electrode is deposited on a semiconductor substrate and then a dielectric layer is deposited on the lower electrode. A dielectric barrier layer is deposited on an upper part of the dielectric layer. The dielectric barrier layer comprises a material for preventing degradation of a leakage current characteristic of the dielectric layer. The method further comprises depositing a capacitor upper electrode on an upper part of the dielectric barrier layer.

Abstract: A method is provided for forming a titanium nitride layer in a metal-insulator-metal (MIM) capacitor. The deposition of a titanium nitride layer is carried out by means of an MOCVD method using a metallo-organic material as a source gas, followed by a rapid thermal process (RTP) at a high temperature. Through the RTP, impurities in the titanium nitride layer are removed and a surface area of the titanium nitride layer is increased in comparison with the titanium nitride layer before the RTP. The titanium nitride layer with increased surface area is useful for a lower electrode of a MIM capacitor.

Abstract: A method for forming a Ta2O5 dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta2O5 dielectric layer on a substrate; b) performing a plasma treatment using N2O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta2O5 dielectric layer for the crystallization of the Ta2O5 dielectric layer.

Abstract: The present invention provides a method for fabricating a capacitor constituted with double hafnium oxide layers through a plasma enhanced chemical vapor deposition (PECVD) process and a low pressure chemical vapor deposition (LPCVD) process. The method for fabricating the capacitor constituted with the double hafnium oxide layers includes: forming a lower electrode layer over a semiconductor substrate; performing a heat treatment with the lower electrode; forming a first HfO2 layer over the first HfO2 layer by using a plasma enhanced chemical vapor deposition (PECVD) method; forming a second HfO2 layer over the first HfO2 layer by using a low pressure chemical vapor deposition (LPCVD) method; and performing a plasma treatment process at a high temperature; and forming an upper electrode over the second HfO2 layer.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device capable of preventing a decrease in capacitance and improving a leakage current characteristic. The inventive method includes the steps of: forming a lower electrode on a substrate; cleaning the lower electrode with use of HF and NH4OH; nitrifying the lower electrode through a NH3 annealing; depositing a nitride layer on the nitrified lower electrode; and forming sequentially a dielectric material and an upper electrode on the nitride layer.

Abstract: This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.

Abstract: A method for fabricating a capacitor of a semiconductor device for improving a capacitance and concurrently enhancing a leakage current characteristic and a breakdown voltage characteristic. The method includes the steps of: (a) forming a conductive silicon layer for a bottom electrode on a substrate; (b) nitridating the conductive silicon layer; (c) oxidizing the nitridated conductive silicon layer; (d) forming a silicon nitride layer on a surface of the oxidized layer; (e) forming a dielectric layer on the silicon nitride layer; and (f) forming a top electrode on the dielectric layer.

Abstract: The present invention provides a method for fabricating a capacitor constituted with double hafnium oxide layers through a plasma enhanced chemical vapor deposition (PECVD) process and a low pressure chemical vapor deposition (LPCVD) process. The method for fabricating the capacitor constituted with the double hafnium oxide layers includes: forming a lower electrode layer over a semiconductor substrate; performing a heat treatment with the lower electrode; forming a first HfO2 layer over the first HfO2 layer by using a plasma enhanced chemical vapor deposition (PECVD) method; forming a second HfO2 layer over the first HfO2 layer by using a low pressure chemical vapor deposition (LPCVD) method; and performing a plasma treatment process at a high temperature; and forming an upper electrode over the second HfO2 layer.

Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device, the method including the steps of preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber, supplying an aluminum source material and NH3 gas into the reaction chamber simultaneously for being absorbed on the semiconductor substrate, discharging unreacted MTMA or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging, supplying an oxygen source material into the reaction chamber for being absorbed on the semiconductor substrate, and discharging unreacted oxygen source or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging.

Abstract: Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while preventing generation of leakage current in the capacitor. The disclosed method comprises comprising the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; depositing an amorphous TaON film having an excellent dielectric constant on the ruthenium film; subjecting the resulting substrate to a first thermal treatment to prevent oxidation of the lower electrode and to remove carbons present in the amorphous TaON thin film; subjecting the resulting substrate to a second thermal treatment to crystallize the amorphous TaON thin film; and forming a metal film as a metal film on the crystalline TaON film.

Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.

Abstract: Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’), which provides improved formation rates of Ru film having desired thickness using ozone (O3) having high reactivity.

Abstract: Disclosed is a method for fabricating a capacitor in a semiconductor device. A semiconductor substrate is provided. A bottom electrode is formed on the substrate by sequentially depositing Ru through a PECVD process and Ru through a LPCVD process on the semiconductor substrate. A Ta2O5 dielectric layer is formed on the bottom electrode and forming a top electrode on the Ta2O5 dielectric layer.