Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device capable of preventing a decrease in capacitance and improving a leakage current characteristic. The inventive method includes the steps of: forming a lower electrode on a substrate; cleaning the lower electrode with use of HF and NH4OH; nitrifying the lower electrode through a NH3 annealing; depositing a nitride layer on the nitrified lower electrode; and forming sequentially a dielectric material and an upper electrode on the nitride layer.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.

Abstract: This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.

Abstract: Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while generation of leakage current in the capacitor. The method comprises the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; forming a TaON film having a high dielectric constant on the ruthenium film; and forming a upper electrode on the TaON film.

Abstract: A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.

Abstract: Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’) and dielectric layer formed of tantalum oxide (Ta2O5) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.

Abstract: The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time.

Abstract: A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Abstract: Disclosed is an electric double layer capacitor, including a unit cell of completely combined polarizable electrodes and metal cases, and a fabrication method thereof. The method includes the steps of pitting or etching any one face of a metal substrate made of the same material as the metal cases to form a plurality of indentations, coating slurry of an electrode material consisting mainly of an activated carbon powder onto the indented face of the metal substrate, compressing the coated face by use of a heating roll to afford the polarizable electrodes, and welding the polarizable electrodes and the metal cases after aligning the centers thereof with each other. In the thusly fabricated electric double layer capacitor, the electrode material of the activated carbon powder is combined with the metal case through the metal substrate adhered to the metal case by welding.

Abstract: Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’) and dielectric layer formed of tantalum oxide (Ta2O5) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.

Abstract: Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’), which provides improved formation rates of Ru film having desired thickness using ozone (O3) having high reactivity.

Abstract: A method for forming a capacitor of a semiconductor device which provides improved reliability and characteristics of semiconductor device by removing oxygen from the Ru film using NH3 gas during the deposition process of the Ru film used as storage electrode material or, in the alternative, performing a NH3 plasma treatment after the deposition process of Ru film to inhibit formation of oxide film at the interface of Ru film and barrier metal layer, and then by forming rugged surface on the Ru film with RTP under N2 or NH3 gas atmosphere to obtain a high capacitance for high integration of semiconductor device.

Abstract: There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.

Abstract: A method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, which can improve the quality of a layer and its electric property by forming a Ta2O5 dielectric layer using a plasma enhanced atomic layer deposition. The method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, comprising the steps of: a) flowing Ta(OC2H5)5 source gas in a chamber and generating plasma; b) depositing a Ta2O5 layer by using the plasma; c) purging the chamber; d) repeatedly performing the steps a) to c) in order to form a Ta2O5 dielectric layer; e) thermally treating the surface of the Ta2O5 dielectric layer in an oxygen atmosphere; and f) crystallizing the Ta2O5 dielectric layer.

Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.

Abstract: Disclosed is a method for fabricating a capacitor in a semiconductor device. A semiconductor substrate is provided. A bottom electrode is formed on the substrate by sequentially depositing Ru through a PECVD process and Ru through a LPCVD process on the semiconductor substrate. A Ta2O5 dielectric layer is formed on the bottom electrode and forming a top electrode on the Ta2O5 dielectric layer.

Abstract: A method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, which can improve the quality of a layer and its electric property by forming a Ta2O5 dielectric layer using a plasma enhanced atomic layer deposition. The method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, comprising the steps of: a) flowing Ta(OC2H5)5 source gas in a chamber and generating plasma; b) depositing a Ta2O5 layer by using the plasma; c) purging the chamber; d) repeatedly performing the steps a) to c) in order to form a Ta2O5 dielectric layer; e) thermally treating the surface of the Ta2O5 dielectric layer in an oxygen atmosphere; and f) crystallizing the Ta2O5 dielectric layer.