Abstract: A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.

Abstract: A method for preparing a Rhus verniciflua Stokes extract with an increased content of fisetin, the method including adding reacting at least one catalyst selected from the group consisting of platinum, chromium, nickel, silicon, copper, and oxides of these metals, to a Rhus verniciflua Stokes extract or a concentrated Rhus verniciflua Stokes extract and conducting reaction to convert fustin contained in the Rhus verniciflua Stokes into fisetin, and a functional health food composition for preventing or ameliorating cancer, or an anticancer pharmaceutical composition for inhibiting metastasis of cancer, as a main component, containing the Rhus verniciflua Stokes extract with an increased content of fisetin, prepared by the method which provides a very safe and efficient method that is capable of preparing an extract that exhibits improved antioxidant activity and anticancer activity by increasing the content of the main functional ingredients of natural extracts, and an anticancer agent composition.

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.

Abstract: A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.

Abstract: A microalgae curtain wall includes photobioreactors, an interior glass panel, an exterior glass panel, and transoms. The photobioreactors are adapted to receive sunlight and carbon dioxide to grow microalgae received therein. The exterior glass panel is offset from the interior glass panel forming a gap therebetween. The transoms hold the interior glass panel and the exterior glass panel therebetween. The transoms suspend the photobioreactors in the gap and between the interior glass panel and the exterior glass panel.

Abstract: A method for preparing a Rhus verniciflua Stokes extract with an increased content of fisetin, the method including adding reacting at least one catalyst selected from the group consisting of platinum, chromium, nickel, silicon, copper, and oxides of these metals, to a Rhus verniciflua Stokes extract or a concentrated Rhus verniciflua Stokes extract and conducting reaction to convert fustin contained in the Rhus verniciflua Stokes into fisetin, and a functional health food composition for preventing or ameliorating cancer, or an anticancer pharmaceutical composition for inhibiting metastasis of cancer, as a main component, containing the Rhus verniciflua Stokes extract with an increased content of fisetin, prepared by the method which provides a very safe and efficient method that is capable of preparing an extract that exhibits improved antioxidant activity and anticancer activity by increasing the content of the main functional ingredients of natural extracts, and an anticancer agent composition.

Abstract: An exhaust gas recirculation (EGR) cooling apparatus of an engine for a vehicle includes: a cylinder block comprising cylinder chambers, a water jacket extending along the cylinder chambers, and a space with inlets and outlets passing through the water jacket so that the cooling water circulates into the space through the inlets and the outlets; an EGR cooler coupled to the cylinder block adjacent the space of the cylinder block to cover the space from one side of the cylinder block, and comprising gas flow paths in the space to circulate exhaust gas through the gas flow paths inside the space; and an insert guide disposed between the plurality of cylinder chambers and the space and blocking flow of the cooling water circulating in the water jacket.

Abstract: An exhaust gas recirculation (EGR) cooling apparatus of an engine for a vehicle includes: a cylinder block comprising cylinder chambers, a water jacket extending along the cylinder chambers, and a space with inlets and outlets passing through the water jacket so that the cooling water circulates into the space through the inlets and the outlets; an EGR cooler coupled to the cylinder block adjacent the space of the cylinder block to cover the space from one side of the cylinder block, and comprising gas flow paths in the space to circulate exhaust gas through the gas flow paths inside the space; and an insert guide disposed between the plurality of cylinder chambers and the space and blocking flow of the cooling water circulating in the water jacket.

Abstract: An integrated exhaust gas recirculation (EGR) valve housing includes: a temperature control passage configured to include a first cooling channel which connects a water jacket formed in an engine to a radiator and a second cooling channel which is branched from the first cooling channel and extends to an EGR cooler cooling re-circulated exhaust gas; and an auxiliary cooling passage configured to guide cooling water introduced into the second cooling channel to the EGR valve housing, whereby it is possible to easily dispose the EGR valve housing in the engine compartment by integrating the parts through which the cooling water is discharged from the engine with the cooling water channel connected to the EGR valve housing.

Abstract: A method for diagnosing an electric water pump of an internal combustion engine includes determining whether a present condition is a coil-open diagnosis condition that enables diagnosis of whether any coil of a sensorless 3-phase motor used in the electric water pump is open. When the coil-open diagnosis condition is satisfied, whether a coil of one phase is open is determined by using a change in phase currents. When the coil-open diagnosis condition is satisfied, whether coils of two phases are open is determined by using a magnitude of a motor torque or a magnitude of an average phase current. When the coil-open diagnosis condition is satisfied, whether any coil of the motor is open during driving of the motor is determined by using a variation in the motor torque.

Abstract: An integrated exhaust gas recirculation (EGR) valve housing includes: a temperature control passage configured to include a first cooling channel which connects a water jacket formed in an engine to a radiator and a second cooling channel which is branched from the first cooling channel and extends to an EGR cooler cooling re-circulated exhaust gas; and an auxiliary cooling passage configured to guide cooling water introduced into the second cooling channel to the EGR valve housing, whereby it is possible to easily dispose the EGR valve housing in the engine compartment by integrating the parts through which the cooling water is discharged from the engine with the cooling water channel connected to the EGR valve housing.

Abstract: A method for diagnosing an electric water pump of an internal combustion engine includes determining whether a present condition is a coil-open diagnosis condition that enables diagnosis of whether any coil of a sensorless 3-phase motor used in the electric water pump is open. When the coil-open diagnosis condition is satisfied, whether a coil of one phase is open is determined by using a change in phase currents. When the coil-open diagnosis condition is satisfied, whether coils of two phases are open is determined by using a magnitude of a motor torque or a magnitude of an average phase current. When the coil-open diagnosis condition is satisfied, whether any coil of the motor is open during driving of the motor is determined by using a variation in the motor torque.

Abstract: A method for diagnosing an electronic water pump of an engine in a vehicle includes determining whether a stall occurs while a sensorless 3-phase motor used for the electronic water pump of the engine is driven, based on a peak value of a torque of the motor. The method further includes determining whether the stall occurs while the motor is stopped, based on the torque of the motor.

Abstract: The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.

Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.

Abstract: A method of forming through silicon vias (TSVs) uses a low-k dielectric material as a via insulating layer to thereby improve step coverage and minimize resistive capacitive (RC) delay. To this end, the method includes forming a primary via hole in a semiconductor substrate, depositing low-k dielectric material in the primary via hole, forming a secondary via hole by etching the low-k dielectric in the primary via hole, in such a manner that a via insulating layer and an inter metal dielectric layer of the low-k dielectric layer are simultaneously formed. The via insulating layer is formed of the low-k dielectric material on sidewalls and a bottom surface of the substrate which delimit the primary via hole and the inter metal dielectric layer is formed on an upper surface of the substrate. Then a metal layer is formed on the substrate including in the secondary via hole, and the metal layer is selectively removed from an upper surface of the semiconductor substrate.

Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.

Abstract: A semiconductor device comprises a top surface having a first contact, a bottom surface having a second contact, a via hole penetrating a substrate, an insulation layer structure on a sidewall of the via hole, the insulation layer structure having an air gap therein, a through electrode having an upper surface and a lower surface on the insulation layer structure, the through electrode filling the via hole and the lower surface being the second contact, and a metal wiring electrically connected to the upper surface of the through electrode and electrically connected to the first contact.

Abstract: A method of forming through silicon vias (TSVs) uses a low-k dielectric material as a via insulating layer to thereby improve step coverage and minimize resistive capacitive (RC) delay. To this end, the method includes forming a primary via hole in a semiconductor substrate, depositing low-k dielectric material in the primary via hole, forming a secondary via hole by etching the low-k dielectric in the primary via hole, in such a manner that a via insulating layer and an inter metal dielectric layer of the low-k dielectric layer are simultaneously formed. The via insulating layer is formed of the low-k dielectric material on sidewalls and a bottom surface of the substrate which delimit the primary via hole and the inter metal dielectric layer is formed on an upper surface of the substrate. Then a metal layer is formed on the substrate including in the secondary via hole, and the metal layer is selectively removed from an upper surface of the semiconductor substrate.