Abstract: A wafer test system includes an input device configured to transmit a test signal, a wafer including an optical port, an input port configured to receive the test signal, and an output port configured to output a result signal based on the test signal, a measuring device configured to measure the result signal, and an alignment device configured to align an optical fiber port of an optical probe with an alignment port based on the result signal and then align the optical fiber port with the optical port. The alignment port is the input port or the output port. The optical probe is configured to be the input device when the input port is the alignment port and the optical probe is configured to be the measuring device when the output port is the alignment port.

Abstract: A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a <100> crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a <110> crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract: An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Abstract: Semiconductor apparatuses having optical connections between a memory controller and a memory module are provided. A semiconductor apparatus includes a memory controller, at least one socket configured to receive a memory module, and a first optical-electrical module. A second optical-electrical module is mounted in the socket and optically coupled to the first optical-electrical module via at least one optical channel.

Abstract: An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.

Abstract: An optical memory system according to example embodiments includes a plurality of memory modules, each memory module including a plurality of memory devices; a light source; a light distribution unit connected to the light source through a first optical transmission line; a plurality of second optical transmission lines connected between the light distribution unit and the plurality of memory modules; a plurality of electrical to optical converters, each connected to at least one of the second optical transmission lines; and a plurality of output optical transmission lines connected to the plurality of electrical to optical converters, each output optical transmission line for outputting an electrical to optical converted signal.

Abstract: A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection.

Abstract: An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Abstract: An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Abstract: An optical modulator includes a light input/output unit receiving an incident optical signal which has not been modulated, splitting the incident optical signal into a first optical signal and a second optical signal, and transmitting the first and second optical signals to a first path and a second path, respectively, of an optical waveguide. A phase shifter is positioned in at least one of the first and second paths and modulates a phase of at least one of the first and second optical signals, which have been received through the first and second paths, respectively, in response to an electrical signal. A phase-modulated signal is output. A reflective grating coupler reflects signals respectively received through the first and second paths back along the first and second paths respectively.

Abstract: A de-emphasis format signal generator can be configured to combine first and second electrical non-de-emphasis formatted signals provided to first and second optical modulators, coupled in parallel with one another, to provide a combined optical signal having a de-emphasis format. Accordingly, three aspects of a de-emphasis formatted signal, including a de-emphasis delay aspect, a de-emphasis attenuation aspect, and a de-emphasis combining aspect, can provided separately and in different domains (such as in the electrical domain and in the optical domain) which can be combined with one another to provide an output de-emphasis formatted optical signal.

Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Abstract: A wafer test system includes an input device configured to transmit a test signal, a wafer including an optical port, an input port configured to receive the test signal, and an output port configured to output a result signal based on the test signal, a measuring device configured to measure the result signal, and an alignment device configured to align an optical fiber port of an optical probe with an alignment port based on the result signal and then align the optical fiber port with the optical port. The alignment port is the input port or the output port. The optical probe is configured to be the input device when the input port is the alignment port and the optical probe is configured to be the measuring device when the output port is the alignment port.

Abstract: An optical modulator structure can include a core region that comprises an optical transmission path having a refractive index that is modulated via electric charge introduced into the core region. A plurality of first vertical slabs comes into contact with and is spaced along a first side of the core region to provide a first path for the electric charge to/from the core region. A plurality of second vertical slabs come into contact with and is spaced along a second side of the core region, that is opposite to the first side, to provide a second path for the electric charge to/from the core region. Other structures and methods are disclosed.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: A wavelength tunable optical transmitter includes a first waveguide receiving incident light through an input port and outputting the incident light to a first output port, a resonant modulator adjacent to the first waveguide and whose resonant wavelength is variable, and a second waveguide disposed optically in parallel to the first waveguide and outputting emitted light to a second output port. The resonant modulator includes a silicon resonator constituted by a crystallized silicon film in the form of a closed loop between the first and second waveguides, a first electrode within the silicon resonator and constituted by a silicon film of a first conductivity type, and a second electrode extending alongside part of the outer circumferential surface of the silicon resonator and constituted by a silicon film of a second conductivity type.

Abstract: A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Abstract: A phase shifter includes an optical waveguide, a plurality of impurity regions and a plurality of electrodes. The optical waveguide receives an optical input signal and outputs an optical output signal. The impurity regions include respective charge carriers. The impurity regions are disposed in contact with the optical waveguide at respective contact surface, where at least one of the contact surfaces has a zigzag pattern. The electrodes are connected to the respective impurity regions. Application of an electrical signal to at least one of the electrodes phase-shifts the optical output signal with respect to the optical input signal. Therefore, the phase shifter may efficiently vary a magnitude of the phase shift of the optical output signal.