Abstract: Semiconductor apparatuses having optical connections between a memory controller and a memory module are provided. A semiconductor apparatus includes a memory controller, at least one socket configured to receive a memory module, and a first optical-electrical module. A second optical-electrical module is mounted in the socket and optically coupled to the first optical-electrical module via at least one optical channel.

Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.

Abstract: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.

Abstract: Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.

Abstract: Example embodiments provide a probe card having an optical transmitting unit and a memory tester having the probe card. The probe card may include a plurality of needles connected to test terminals formed in a memory, a plurality of first terminals connected to the needles, a plurality of second terminals connected to the outside and corresponding to the first terminals, and an optical transmitting unit. The optical transmitting unit may connect the first terminals and the second terminals.

Abstract: A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers.

Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Abstract: A speckle reduction laser and a laser display apparatus having the speckle reduction laser are provided. The speckle reduction laser includes a semiconductor unit that comprises an active layer and emits laser light through a first side surface thereof by resonating light generated from the active layer, and a vibration mirror unit disposed adjacent to a second side surface of the semiconductor unit. The laser further includes a mirror, and the resonance of the laser light is generated between the first side surface of the semiconductor unit and the mirror, and a resonance mode of the laser light is changed according to the vibration of the mirror.

Abstract: A speckle reduction laser and a laser display apparatus having the speckle reduction laser are provided. The speckle reduction laser includes a semiconductor unit that comprises an active layer and emits laser light through a first side surface thereof by resonating light generated from the active layer, and a vibration mirror unit disposed adjacent to a second side surface of the semiconductor unit. The laser further includes a mirror, and the resonance of the laser light is generated between the first side surface of the semiconductor unit and the mirror, and a resonance mode of the laser light is changed according to the vibration of the mirror.

Abstract: A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.

Abstract: Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.

Abstract: Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.

Abstract: Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.

Abstract: Provided is a laser display apparatus in which speckle can be suppressed. The laser display apparatus includes: a laser comprising a first mirror and a second mirror that are separated by a cavity distance and form a cavity; and a spatial modulator modulating light transmitted through the first mirror of the laser to display an image on a screen, wherein, when a coherence length lc and an effective reflectivity R are defined by the following equation: l c = 2 ? d ? ? ? ? ? R 1 / 2 1 - R R = R 1 × R 2 [ Equation ] where d is the cavity distance of the laser, R1 is the reflectivity of the first mirror, and R2 is the reflectivity of the second mirror, the coherence length lc satisfies the following inequality: 0<lc?0.85[cm].

Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Abstract: Provided is a laser display apparatus in which speckle can be suppressed. The laser display apparatus includes: a laser comprising a first mirror and a second mirror that are separated by a cavity distance and form a cavity; and a spatial modulator modulating light transmitted through the first mirror of the laser to display an image on a screen, wherein, when a coherence length lc and an effective reflectivity R are defined by the following equation: l c = 2 ? d ? ? ? ? ? ? ? R 1 / 2 1 - R R = R 1 × R 2 [ Equation ] where d is the cavity distance of the laser, R1, is the reflectivity of the first mirror, and R2 is the reflectivity of the second mirror, the coherence length lc satisfies the following inequality: 0<lc?0.85??[cm].

Abstract: A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride semiconductor layer, a metal layer and a metal-based clad layer sequentially formed on the substrate. The metal layer and the metal-based clad layer have a ridge shape and a current blocking layer is formed on sidewalls of the metal layer and the metal-based clad layer and an exposed surface of the nitride semiconductor layer. A p-electrode layer is formed on the ridge shaped metal layer and the current blocking layer. The semiconductor laser device uses the metal-based clad layer instead of AlxInyGa1-x-yN-based p-clad layer, thus preventing degradation of the active region. The semiconductor laser device also includes the thin metal layer between the metal-based clad layer and a p-GaN material of the nitride semiconductor layer, thus reducing contact resistance therebetween.