Abstract: A schottky barrier diode includes an n? type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n? type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n? type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n? type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+ type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n? type epitaxial layer.

Abstract: Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: A Schottky barrier diode includes: an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n? type epitaxial layer; an n type epitaxial layer disposed on the n? type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other.

Abstract: A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n? type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n? type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.

Abstract: A method of manufacturing a semiconductor device may include sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench.

Abstract: A schottky barrier diode includes: an n? type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n? type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n? type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n? type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n? type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate.

Abstract: The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate. According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n? type epitaxial layer.

Abstract: A schottky barrier diode may include a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n? type epitaxial layer, a second n type epitaxial layer disposed on the first n? type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other.

Abstract: A method of joining silver paste is provided that includes preparing silver paste including a plurality of silver powders and solid phase sintering medium materials capable of surrounding each silver powder. In addition, the method incldues heating the silver paste at an oxygen partial pressure that is greater than a level at an atmospheric pressure, and joining the silver powders.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n? type epitaxial layer.

Abstract: A method of joining silver paste is provided. The method includes preparing silver paste comprising silver powders and lead powders and heating silver paste. The silver powders are then joined.

Abstract: A Schottky barrier diode includes: an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n? type epitaxial layer; an n type epitaxial layer disposed on the n? type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; an n+ region disposed on the second n? type epitaxial layer; a trench passing through the second n? type epitaxial layer, the p type epitaxial layer, and the n+ region, and disposed on the first n? type epitaxial layer; a p+ region disposed on the p type epitaxial layer and separated from the trench; and a gate insulating layer positioned in the trench, in which channels are disposed in the second n? type epitaxial layer of both sides of the trench and the p type epitaxial layer of both sides of the trench.

Abstract: Disclosed are a semiconductor device and a method of manufacturing a semiconductor device. The device may include an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a p type epitaxial layer disposed on the n? type epitaxial layer, an n+ region disposed on the p type epitaxial layer, a trench passing through the p type epitaxial layer and the n+ region and disposed on the n? type epitaxial layer, a p+ region disposed on the n? type epitaxial layer and separated from the trench, a gate insulating layer positioned in the trench, a gate electrode positioned on the gate insulating layer, an oxide layer positioned on the gate electrode, a source electrode positioned on the n+ region, the oxide layer, and the p+ region, and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, in which channels are positioned on both sides of the trench.

Abstract: The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench.

Abstract: A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n? type epitaxial layer. An n+ type epitaxial layer is disposed on the n? type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n? type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n? type epitaxial layer and substantially curved parts that extend from the substantially straight parts.

Abstract: A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n? type epitaxial layer. An n+ type epitaxial layer is disposed on the n? type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n? type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n? type epitaxial layer and substantially curved parts that extend from the substantially straight parts.