Abstract: Provided is a method of manufacturing a semiconductor device including sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench.

Abstract: A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n? type epitaxial layer. An n+ type epitaxial layer is disposed on the n? type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n? type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n? type epitaxial layer and substantially curved parts that extend from the substantially straight parts.

Abstract: The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n? epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n? epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n? epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n? epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

Abstract: A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n? type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n? type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

Abstract: A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n? type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate.

Abstract: A method for fabricating a semiconductor device includes: sequentially forming an n? type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon carbide substrate; forming a trench by penetrating the first n+ region and the p type epitaxial layer, and etching part of the n? type epitaxial layer; forming a buffer layer in the trench and on the first n+ region; etching the buffer layer to form a buffer layer pattern on both sidewalls defined by the trench; forming a first silicon film on the first n+ region, the buffer layer pattern, and a surface of the n? type epitaxial layer exposed by the trench; oxidizing the first silicon film to form a first silicon oxide film; removing the buffer layer pattern by an ashing process to form a first silicon oxide film pattern; forming a second silicon film on the first silicon oxide film pattern and in the trench; oxidizing the second silicon film to form a second silicon oxide film; and etching the second silicon oxide fi

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

Abstract: Disclosed is a method for fabricating a semiconductor device including: sequentially forming a first insulating film and a first barrier layer on a first surface of a substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film to form a first insulating film pattern; removing the first barrier layer pattern and forming a first type epitaxial layer on an exposed first portion of the substrate; forming a second insulating film and a second barrier layer on the first type epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film to form a second insulating film pattern, and etching the first insulating film pattern; and forming a second type epitaxial layer on an exposed second portion of the first surface of the n substrate.

Abstract: A schottky barrier diode includes: an n? type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n? type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n? type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n? type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n? type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate.

Abstract: A Schottky barrier diode includes: an n+ type silicon carbide substrate; an n? type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate and includes an electrode area and a terminal area positioned outside of the electrode area; a first trench and a second trench disposed on the n? type epitaxial layer in the terminal area; a p area disposed under the first trench and the second trench; a Schottky electrode disposed on the n? type epitaxial layer in the electrode area; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first trench and the second trench are adjacently positioned to form a step.

Abstract: Disclosed is a method for fabricating a semiconductor device including: sequentially forming a first insulating film and a first barrier layer on a first surface of a substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film to form a first insulating film pattern; removing the first barrier layer pattern and forming a first type epitaxial layer on an exposed first portion of the substrate; forming a second insulating film and a second barrier layer on the first type epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film to form a second insulating film pattern, and etching the first insulating film pattern; and forming a second type epitaxial layer on an exposed second portion of the first surface of the n substrate.

Abstract: The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench.

Abstract: The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate. According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.

Abstract: A semiconductor device structure for an ohmic contact is provided, including a silicon carbide substrate and an ohmic contact layer disposed on the silicon carbide substrate. A carbon layer is disposed on the ohmic contact layer. An anti-diffusion layer is disposed on the carbon layer, and a pad layer is disposed on the anti-diffusion layer. The anti-diffusion layer is made of any one of tungsten (W), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).

Abstract: A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n? type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: A schottky barrier diode includes an n? type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n? type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n? type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n? type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+ type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n? type epitaxial layer.

Abstract: A method for fabricating a semiconductor device includes: sequentially forming an n? type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon carbide substrate; forming a trench by penetrating the first n+ region and the p type epitaxial layer, and etching part of the n? type epitaxial layer; forming a buffer layer in the trench and on the first n+ region; etching the buffer layer to form a buffer layer pattern on both sidewalls defined by the trench; forming a first silicon film on the first n+ region, the buffer layer pattern, and a surface of the n? type epitaxial layer exposed by the trench; oxidizing the first silicon film to form a first silicon oxide film; removing the buffer layer pattern by an ashing process to form a first silicon oxide film pattern; forming a second silicon film on the first silicon oxide film pattern and in the trench; oxidizing the second silicon film to form a second silicon oxide film; and etching the second silicon oxide fi