Abstract: Disclosed herein is a semiconductor device and method of manufacturing the semiconductor, including an n type buffer layer disposed on a first surface of an n+ type silicon carbide substrate, an n? type epitaxial layer disposed on the n type buffer layer, a first type of trench disposed on each side of a second type of trench, wherein the trenches are disposed in the n? type epitaxial layer, an n+ region disposed on the n? type epitaxial layer, a p+ region disposed in each first type of trench, a gate insulating layer disposed in the second trench, a gate material disposed on the gate insulating layer, an oxidation layer disposed on the gate material, a source electrode disposed on the n+ region, oxidation layer, and p+ region, and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.

Abstract: A schottky barrier diode may include a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n? type epitaxial layer, a second n type epitaxial layer disposed on the first n? type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other.

Abstract: Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

Abstract: A method of manufacturing a semiconductor device may include forming a first n? type epitaxial layer by performing a first epitaxial growth on a first surface of an n+ type silicon carbide substrate, forming a photosensitive layer pattern on the first n? type epitaxial layer, etching the first n? type epitaxial layer by using the photosensitive layer pattern as a mask to form a first trench, forming a buffer layer on the first n? type epitaxial layer after the photosensitive layer pattern may be removed, etching the buffer layer to form a trench passivation layer in the first trench, forming an n? type epitaxial layer by performing a second epitaxial growth on the first n? type epitaxial layer, and forming a p type epitaxial layer by performing a third epitaxial growth on the n? type epitaxial layer other than the portion on which the trench passivation layer may be formed.

Abstract: Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

Abstract: The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n? epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n? epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n? epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n? epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.