Abstract: A polarizing plate includes: a polarizing film; and an optical film on a surface of the polarizing film, the optical film including a first resin layer and a second resin layer sequentially stacked on the polarizing film, wherein the second resin layer has a higher index of refraction than the first resin layer, a plurality of pattern groups is at an interface between the first resin layer and the second resin layer, each of the pattern groups including at least two embossed optical patterns protruding from the second resin layer and a flat section between adjacent embossed optical patterns, each of the first surfaces being a bottom portion of each of the embossed optical patterns, and, in each pattern group, shortest distances between the first surfaces of the embossed optical patterns and the flat sections immediately adjacent to the embossed optical patterns are sequentially increased, or sequentially decreased.

Abstract: Disclosed is a modified microorganism producing putrescine or ornithine, and a method for producing putrescine or ornithine using the same.

Abstract: A system for purifying exhaust gas includes a controller to predict a possibility of ammonia (NH3) slip occurring at the rear end of a selective catalytic reduction on a diesel particulate filter (SDPF) by comparing a convective heat transfer value (h) with a first predetermined value. The controller determines whether an engine is rapidly accelerated, and performs a control to prevent introduction of ammonia downstream of the SDPF when the ammonia slip is predicted to occur.

Abstract: The present disclosure relates to a novel polypeptide having an ability to export an ornithine-based product, and a method for producing an ornithine-based product using the same.

Abstract: A semiconductor package includes a bottom package having a lower substrate and a lower semiconductor chip mounted on the lower substrate, an interposer substrate on the bottom package, a first top package and a second top package that are mounted on the interposer substrate, and a heat spreader that is interposed between the first top package and the second top package and separates the first and second top packages from each other. The heat spreader is adhered to the interposer substrate through a plurality of first connection terminals.

Abstract: A thermoplastic elastomer (TPE) resin powder includes spherical particles of a thermoplastic elastomer resin. The spherical particles have an average particle diameter of 50 ?m to 300 ?m. The thermoplastic elastomer resin powder is suitable for a powder slush molding (PSM) process, and the molded article produced therefrom has excellent surface characteristics.

Abstract: Disclosed is a modified microorganism producing putrescine or ornithine, and a method for producing putrescine or ornithine using the same.

Abstract: The present invention relates to a microorganism for producing diamine, in which activity of a protein having an amino acid sequence of SEQ ID NO: 6 or an amine acid sequence having 42% or higher sequence homology with SEQ ID NO: 6 is introduced or enhanced, and a method of producing diamine using the same.

Abstract: The present invention relates to a microorganism for producing diamine, in which activity of a protein having an amino acid sequence of SEQ ID NO: 6 or an amino acid sequence having 42% or higher sequence homology with SEQ ID NO: 6 is introduced or enhanced, and a method of producing diamine using the same.

Abstract: The present invention relates to a microorganism for producing diamine, in which activity of a protein having an amino acid sequence of SEQ ID NO: 6 or an amino acid sequence having 55% or higher sequence homology with SEQ ID NO: 6 is introduced or enhanced, and a method of producing diamine using the same.

Abstract: The present invention relates to a microorganism for producing diamine, in which activity of a protein having an amino acid sequence of SEQ ID NO: 6 or an amino acid sequence having 55% or higher sequence homology with SEQ ID NO: 6 is introduced or enhanced, and a method of producing diamine using the same.

Abstract: A method for detecting failure of a battery cell due to an unknown discharge current, including connecting a detector in series between the battery cell and a power supply for supplying a charging power, determining whether the charging of the battery cell progresses by the charging power in excess of a predetermined battery cell specific charging reference time, measuring a current value of the battery cell in real time if the charging of the battery cell progresses in excess of the battery cell specific charging reference time, determining whether the current value of the battery cell measured in real time exceeds a predetermined battery cell specific failure determination reference current range value, and determining a state of the battery cell as a failure state if the current value of the battery cell exceeds the predetermined battery cell specific failure determination reference current range value.

Abstract: An image sensor is provided. The image sensor includes a pixel configured to generate a reset signal and an image signal, a comparator configured to compare the reset signal with a reference signal and generate a first comparison signal, a counter configured to generate a first count value corresponding to the reset signal based on a clock signal and the first comparison signal, and a reference signal generator configured to generate the reference signal which changes between a first level corresponding to a maximum reset count value of the counter and a second level corresponding to a minimum reset count value of the counter during a reset signal period.

Abstract: Provided is a method and system for group-based energy harvesting. The group-based energy harvesting method performed by an access point in an energy harvesting system includes allocating an access period in each group including at least one station, receiving an energy state from the station in the group corresponding to the allocated access period, and scheduling stations in each group as a data transmission station or an energy reception station based on the received energy state.

Abstract: The semiconductor package including a first semiconductor package including a first semiconductor package substrate, and a first semiconductor chip on the first semiconductor package substrate, an interposer disposed on the first semiconductor package is provided. Interposer electrically connects the first semiconductor package with an external semiconductor package, and has first and second sides opposed to each other. The second side is located between the first side and the first semiconductor package substrate, a first recess is formed in the second side of the interposer. The first recess has side walls extended from the second side toward the first side of the interposer and an upper surface connected to the side walls and the upper surface of the first recess faces the first semiconductor chip and a via in the interposer. The via does not transmit an electrical signal between the first semiconductor package and the external semiconductor package.

Abstract: Provided are thermoplastic polymer particles having an aspect ratio of 1.00 or more and less than 1.05, and a roundness of 0.95 to 1.00. The thermoplastic polymer particles are formed from a thermoplastic polymer resin in a continuous matrix phase. The thermoplastic polymer particles show a peak cold crystallization temperature (Tcc) at a temperature between a glass transition temperature (Tg) and the melting point (Tm) in a differential scanning calorimetry (DSC) curve which is derived from temperature rise analysis at 10° C./min by differential scanning calorimetry.

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.