Abstract: Provided are an anti-PD-L1/anti-4-1BB natural antibody structure-like heterodimeric form bispecific antibody and a preparation thereof. Specifically, provided are an anti-PD-L1/anti-4-1BB bispecific antibody that has natural IgG features, that has no mismatch between heavy and light chains and that is in the form of a highly stable heterodimer, as well as a preparation method therefor. The bispecific antibody can simultaneously bind two target molecules and is more effective in treating complex diseases and has fewer side effects.

Abstract: A semiconductor device includes: a base substrate; a first interlayer insulating layer disposed on the base substrate; a power rail disposed inside the first interlayer insulating layer; an active pattern extended in a first horizontal direction and disposed on the first interlayer insulating layer; a gate electrode extended in a second horizontal direction different from the first horizontal direction and disposed on the active pattern; a gate cut extended in the first horizontal direction and disposed on the power rail, wherein the gate cut separates the gate electrode; and a power rail via disposed inside the gate cut, wherein the power rail via is overlapped by the power rail.

Abstract: A system includes reception of a user request for a set of data visualizations, execution, in response to the user request, of a main thread to request metadata associated with the set of data visualizations from a remote system, execution of a worker thread to request a set of persisted queries associated with the set of data visualizations from the remote system, to issue the set of persisted queries to the remote system, to receive query results associated with the set of persisted queries from the remote system, and to initiate storage of the query results in a local memory, and execution of the main thread to retrieve the query results stored in the local memory and render the set of data visualizations based on the retrieved query results.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrate; a gate electrode extending on the active pattern; a source/drain region on the active pattern; a first interlayer insulating layer on the source/drain region; a sacrificial layer on the first substrate; a lower wiring layer on a lower surface of the sacrificial layer; a through via trench extending to the lower wiring layer by passing through the first interlayer insulating layer and the sacrificial layer in a vertical direction; a through via inside the through via trench and connected to the lower wiring layer; a recess inside the sacrificial layer and protruding from a sidewall of the through via trench in the second horizontal direction; and a through via insulating layer extending along the sidewall of the through via trench and into the recess.

Abstract: Lithium ion batteries, electrodes, nanofibers, and methods for producing same are disclosed herein. Provided herein are batteries having (a) increased energy density; (b) decreased pulverization (structural disruption due to volume expansion during lithiation/de-lithiation processes); and/or (c) increased lifetime. In some embodiments described herein, using high throughput, water-based electrospinning process produces nanofibers of high energy capacity materials (e.g., ceramic) with nanostructures such as discrete crystal domains, mesopores, hollow cores, and the like; and such nanofibers providing reduced pulverization and increased charging rates when they are used in anodic or cathodic materials.

Abstract: An AM/AV material, comprising a topsheet layer comprising fibers comprising a topsheet polymer composition, a backsheet layer comprising fibers comprising a backsheet polymer composition; and an absorbent core configured therebetween, wherein the fibers of at least one of the layers, e.g., the topsheet layer, comprise an AM/AV compound, and wherein the fibers of the topsheet layer demonstrate a rewet value less than 5 g after a first water application and/or a Staph aureus efficacy log reduction greater than 2.6, as measured in accordance with ISO 20743:2013.

Abstract: The present invention relates to a human Lefty A protein variant with improved productivity and stability, a fusion protein comprising the protein variant, and a composition for preventing and/or treating neuromuscular disease comprising the protein variant or the fusion protein. According to the present invention, a human Lefty A protein variant and a fusion protein comprising the variant are constructed, which have better stability than naturally occurring human Lefty A protein, and thus are expressed at high levels and produced in high yield in animal cells. In addition, administration of the constructed human Lefty A protein variant or fusion protein can restore the nerve and motor functions of nerve disease model animals. Accordingly, the use of the human Lefty A protein variant or fusion protein can effectively prevent or treat various nerve diseases and muscle diseases.

Abstract: Some embodiments provide a program that receives a set of clusters generated from a set of geo-enriched data. The program further identifies a subset of the set of clusters that intersect a map extent of a map. Upon determining that a number of geo-enriched data represented by the subset of the set of clusters is greater than a threshold number, the program renders the map extent of the map to include the subset of the set of clusters. Upon determining that the number of geo-enriched data represented by the subset of the set of clusters is not greater than the threshold number, the program further sends a query for a subset of the set of geo-enriched data that is within the map extent, receives the subset of the set of geo-enriched data and renders the map extent of the map to include the subset of the set of geo-enriched data.

Abstract: Provided herein are electrospinning systems, apparatuses, components, and processes for the preparation of nanofibers, including high throughput systems, apparatuses, and processes for producing high performance nanofibers.

Abstract: Lithium ion batteries, electrodes, nanofibers, and methods for producing same are disclosed herein. Provided herein are batteries having (a) increased energy density; (b) decreased pulverization (structural disruption due to volume expansion during lithiation/de-lithiation processes); and/or (c) increased lifetime. In some embodiments described herein, using high throughput, water-based electrospinning process produces nanofibers of high energy capacity materials (e.g., ceramic) with nanostructures such as discrete crystal domains, mesopores, hollow cores, and the like; and such nanofibers providing reduced pulverization and increased charging rates when they are used in anodic or cathodic materials.

Abstract: Disclosed is a washing machine including a drying function. Here, a height of a bottom end of a dryer disposed above a tub is lower than a height of a top end of the tub to have a space for integrating other devices having additional functions above the tub.

Abstract: Lithium ion batteries, electrodes, nanofibers, and methods for producing same are disclosed herein. Provided herein are batteries having (a) increased energy density; (b) decreased pulverization (structural disruption due to volume expansion during lithiation/de-lithiation processes); and/or (c) increased lifetime. In some embodiments described herein, using high throughput, water-based electrospinning process produces nanofibers of high energy capacity materials (e.g., ceramic) with nanostructures such as discrete crystal domains, mesopores, hollow cores, and the like; and such nanofibers providing reduced pulverization and increased charging rates when they are used in anodic or cathodic materials.

Abstract: Provided herein are polymer-ceramic hybrid membranes, as well as processes for manufacturing such membranes. In particular, polymer-ceramic hybrid membranes are non-flammable and thermally stable and may be used in batteries, such as lithium ion batteries.

Abstract: A system includes reception of a user request for a set of data visualizations, execution, in response to the user request, of a main thread to request metadata associated with the set of data visualizations from a remote system, execution of a worker thread to request a set of persisted queries associated with the set of data visualizations from the remote system, to issue the set of persisted queries to the remote system, to receive query results associated with the set of persisted queries from the remote system, and to initiate storage of the query results in a local memory, and execution of the main thread to retrieve the query results stored in the local memory and render the set of data visualizations based on the retrieved query results.

Abstract: A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.

Abstract: Lithium-containing nanofibers, as well as processes for making the same, are disclosed herein. In some embodiments described herein, using high throughput (e.g., gas assisted and/or water based) electrospinning processes produce nanofibers of high energy capacity materials with continuous lithium-containing matrices or discrete crystal domains.

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.

Abstract: A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.

Abstract: A method of fabricating an interconnection line of a semiconductor device includes forming a via and a lower interconnection trench in a first interlayer insulating layer, an etch stop layer, and a second interlayer insulating layer on a substrate, forming a lower diffusion barrier layer, a lower seed layer, and a lower interconnection layer inside the via and the lower interconnection trench, planarizing the lower interconnection layer using a chemical mechanical polishing (CMP) process to form a contact plug and a lower interconnection line, depositing a third interlayer insulating layer on top of a second interlayer insulating pattern and the lower interconnection line, forming an upper interconnection trench in the third interlayer insulating layer, forming an upper diffusion barrier layer, an upper seed layer, and an upper interconnection layer inside the upper interconnection trench, and planarizing the upper interconnection layer using a CMP process to form an upper interconnection line.

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.