Patents by Inventor Kyoung Woo

Kyoung Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8772806
    Abstract: A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Min Hwang, Kyoung Woo Jo
  • Patent number: 8710535
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: April 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyoung Woo Jo, Sun Kyung Kim, Woon Kyung Choi
  • Publication number: 20140106959
    Abstract: Disclosed is a method for preparing a metal catalyst having improved yield of alcohols. The method for preparing a metal catalyst for the production of alcohol from synthesis gas includes forming a metal catalyst; and irradiating the metal catalyst with gamma rays. The metal catalyst has improved yield of alcohols by stabilizing the metal catalyst through gamma ray irradiation to inhibit generation of hydrocarbons in catalytic reaction with synthesis gas.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 17, 2014
    Applicant: Korea Institute of Energy Research
    Inventors: Sun-Hwa YEON, Dae-Hyun SHIN, Nam-Sun NHO, Kyoung-Hee SHIN, Chang-Soo JIN, Sung-Chan NAM, Je-Kyoung WOO, Kwang-Ho KIM
  • Patent number: 8697455
    Abstract: Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: April 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Woo Lee, Hong-Jae Shin, Woo-Jin Jang
  • Patent number: 8575635
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: November 5, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jong Hak Won, Sun Kyung Kim, Kyoung Woo Jo, Joong Seo Park
  • Publication number: 20130234188
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.
    Type: Application
    Filed: April 8, 2013
    Publication date: September 12, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jung Ha HWANG, Kyoung Woo JO
  • Publication number: 20130228813
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
    Type: Application
    Filed: April 12, 2013
    Publication date: September 5, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Kyoung Woo JO, Sun Kyung KIM, Woon Kyung CHOI
  • Patent number: 8421110
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyoung Woo Jo, Sun Kyung Kim, Woon Kyung Choi
  • Patent number: 8415698
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: April 9, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jung Ha Hwang, Kyoung Woo Jo
  • Patent number: 8384117
    Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having a trench, a metal layer within the trench, and a light emitting device over the metal layer.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: February 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Seon Song, Kyoung Woo Jo
  • Patent number: 8384131
    Abstract: The semiconductor device includes a fuse structure disposed on a substrate. An interlayer dielectric disposed on the fuse structure. A first contact plug, a second contact plug, and a third contact plug penetrate the interlayer dielectric and wherein each of the first contact plug, the second contact plug and the third contact plug are connected to the fuse structure. A first conductive pattern and a second conductive pattern are disposed on the interlayer dielectric. The first conductive pattern and the second conductive pattern are electrically connected to the first contact plug and second contact plug, respectively.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Woo Lee, Andrew Tae Kim, Hong-Jae Shin
  • Patent number: 8368300
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure on the substrate, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; a first electrode on the light emitting structure; and a patterned phosphor layer on the light emitting structure, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the pattern of the phosphor layer exposes the first electrode.
    Type: Grant
    Filed: October 22, 2010
    Date of Patent: February 5, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyoung Woo Jo, Jung Ha Hwang, Hyeong Seon Yun
  • Patent number: 8317826
    Abstract: An absorbable multifilament draw-textured yarn having a bulky structure, and a manufacturing method and medical use thereof The absorbable multifilament draw-textured yarn is obtained by draw-texturing a multifilament made of an absorbable polymer and has bulkiness and a superior soft touch, which are the characteristics of draw-textured yarns. As a result of partially imparting a bulkiness of 150-1000% to the multifilament draw-textured yarn, it is possible to culture cells in the bulky structure, and the multifilament draw-textured yarn is suitable for cell delivery or drug delivery.
    Type: Grant
    Filed: October 7, 2009
    Date of Patent: November 27, 2012
    Assignee: Korea Institute of Industrial Technology
    Inventors: Young Hwan Park, Jung Nam Im, Jae Hoon Ko, Kyoung Woo Lee, Yong Woo Cho
  • Patent number: 8298911
    Abstract: In a method of forming a wiring structure, a first insulation layer is formed on a substrate, the first insulation layer comprising a group of hydrocarbon (C?H?) wherein ? and ? are integers. A second insulation layer is formed on the first insulation layer, the second insulation layer being avoid of the group of hydrocarbon. A first opening is formed through the first and the second insulation layers by etching the first and the second insulation layers. A damaged pattern and a first insulation layer pattern are formed by performing a surface treatment on a portion of the first insulation layer corresponding to an inner sidewall of the first opening. A sacrificial spacer is formed in the first opening on the damaged pattern and on the second insulation layer. A conductive pattern is formed in the first opening.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: October 30, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kyoung-Woo Lee
  • Publication number: 20120231564
    Abstract: Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 13, 2012
    Inventors: KYOUNG-WOO LEE, Hong-Jae Shin, Woo-Jin Jang
  • Patent number: 8232653
    Abstract: A wiring structure includes a conductive pattern on a substrate, a first insulation layer pattern between adjacent conductive patterns and a second insulation layer pattern on the first insulation layer pattern. The first insulation layer pattern is separated from the conductive pattern by a first distance to provide a first air gap. The second insulation layer pattern is spaced apart from the conductive pattern by a second distance substantially smaller than the first distance to provide a second air gap. The wiring structure may have a reduced parasitic capacitance while simplifying processes for forming the wiring structure.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: July 31, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kyoung-Woo Lee
  • Publication number: 20120086036
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
    Type: Application
    Filed: December 13, 2011
    Publication date: April 12, 2012
    Inventors: Kyoung Woo Jo, Sun Kyung Kim, Woon Kyung Choi
  • Publication number: 20110291070
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.
    Type: Application
    Filed: May 20, 2011
    Publication date: December 1, 2011
    Inventors: Jong Hak WON, Sun Kyung Kim, Kyoung Woo Jo, Joong Seo Park
  • Publication number: 20110215358
    Abstract: A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 8, 2011
    Inventors: Sung Min HWANG, Kyoung Woo JO
  • Publication number: 20110198645
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
    Type: Application
    Filed: February 7, 2011
    Publication date: August 18, 2011
    Inventors: Kyoung Woo Jo, Sun Kyung Kim