Abstract: A semiconductor device may include an input control circuit, a counting circuit, an output control circuit, and a counting operation control circuit. The input control circuit may output a counting input signal based on an input signal and a counting over signal. The counting circuit may generate a preliminary counting code based on the counting input signal. The output control circuit may generate a counting code based on the preliminary counting code. The counting operation control circuit may generate the counting over signal based on a part of the counting code.

Abstract: A semiconductor device may include an amplification circuit. The amplification circuit may be configured to generate an output signal and an output bar signal based on a mode signal, first and second control signals, an input signal, and an input bar signal. The amplification circuit may determine voltage levels of the output signal and the output bar signal based on the mode signal and the first and second control signals regardless of the input signal and the input bar signal.

Abstract: A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference voltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

Abstract: A semiconductor apparatus may be provided. The semiconductor apparatus may include a first buffer configured to generate a first preliminary clock and a first preliminary clock bar based on an external clock, an external clock bar, and a node voltage code. The semiconductor apparatus may include a node voltage control circuit configured to generate the node voltage code based on a control code.

Abstract: A receiver circuit may be provided. The receiver circuit may include a first duty cycle adjuster configured to correct a duty cycle of a first output signal pair. The receiver circuit may include a second duty cycle adjuster configured to correct a duty cycle of a second output signal pair, based on the first output signal pair, after the first duty cycle adjuster performs a correction on the duty cycle of the first output signal pair.

Abstract: A receiver circuit may be provided. The receiver circuit may include a first duty cycle adjuster configured to correct a duty cycle of a first output signal pair. The receiver circuit may include a second duty cycle adjuster configured to correct a duty cycle of a second output signal pair, based on the first output signal pair, after the first duty cycle adjuster performs a correction on the duty cycle of the first output signal pair.

Abstract: A buffer circuit may include an amplification unit and an active load unit. The amplification unit is electrically coupled to an output node and configured to sense and amplify first and second signals. The active load unit is configured to form a peak of a signal outputted from the output node when the signal transitions.

Abstract: A buffer circuit may include an amplification unit and an active load unit. The amplification unit is electrically coupled to an output node and configured to sense and amplify first and second signals. The active load unit is configured to form a peak of a signal outputted from the output node when the signal transitions.