Abstract: Disclosed herein is a cooling apparatus including a body on or below which a power module is mounted; a first cooling unit formed in the body in a longitudinal direction of the body to have first fluid passing therethrough and including an inlet to which the first fluid is introduced at one side of the longitudinal direction of the body and an outlet from which the first fluid is discharged at the other side thereof and a second cooling unit formed in the first cooling unit in a shape intersecting with first cooling unit to have second fluid passing therethrough.

Abstract: Disclosed herein is a heat dissipation system for a power module, including: a manifold including an inlet and an outlet and formed so as to be opened at a surface thereof contacting a nozzle member; a nozzle member formed at an upper portion of the manifold and including inclined nozzles through which a cooling medium introduced through the inlet of the manifold passes; and a nozzle chamber formed on the nozzle member and forming a spacing space spaced from the nozzle member.

Abstract: Disclosed herein is a heat sink including: a pipe for refrigerant movement including a first path, a third path having a cross-sectional area smaller than that of the first path in a thickness direction, and a second path connecting between the first and third paths and having a cross-sectional area in the thickness direction reduced from the first path toward the third path; and a case enclosing the pipe for refrigerant movement.

Abstract: Disclosed herein is a heat sink including: a first region connected to a cooling water introduction part and having a plurality of first pins arranged therein; and a second region connected to a cooling water discharge part and having a plurality of second pins arranged therein.

Abstract: Disclosed herein is a power module package including: a substrate having a ceramic layer formed in one surface thereof; a circuit pattern formed on the ceramic layer; a first lead frame having one side contacting the circuit pattern and the other side protruding toward the outside; and a first semiconductor chip mounted on one side of the first lead frame.

Abstract: Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one surface of the first substrate; a third substrate contacting one side of the other surface of the first substrate; a first lead frame contacting the other side of the other surface of the first substrate; and a second lead frame electrically connected to the third substrate.

Abstract: Disclosed herein is a semiconductor package substrate including a base substrate, a mounting member mounted on an upper portion of the base substrate, and an adhesive layer formed between the base substrate and the mounting member, wherein the adhesive layer includes a thermally conductive adhesive and a ductile adhesive formed at the outer circumference of the thermally conductive adhesive.

Abstract: Disclosed herein are a substrate for a power module package and a method for manufacturing the same, including: a base substrate made of a metal material; an anodized layer formed on the base substrate; and a circuit layer formed on the anodized layer, wherein the anodized layer is formed to correspond to circuit patterns on the circuit layer or is formed to be divided into a plurality of areas.

Abstract: There is provided a transformer having a minimized thickness. The transformer includes: insulating layers; and coil units including primary and secondary coils disposed on the insulating layers to have a common center.

Abstract: Disclosed is an asymmetric thermoelectric module, which includes a plurality of first-type thermoelectric semiconductor elements, a plurality of second-type thermoelectric semiconductor elements, a plurality of pairs of assistant layers having different melting points and disposed on the upper and lower surfaces of the first-type and second-type thermoelectric semiconductor elements, and a pair of substrates.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: A steel having an improved tensile strength includes a first layer formed of an ultra-low carbon steel; and a second layer that is formed in contact with the first layer, includes a first surface opposite to the first layer, is formed of a solid solution obtained by solid-solving nitrogen in the ultra-low carbon steel, and has a structure substantially the same as a structure of the first layer.

Abstract: A system and method for producing a plurality of controlled surface irregularities, such as wrinkles, is provided. The system includes a polymeric substrate. An irradiation source is positioned to provide a beam on desired areas of the polymeric substrate. The surface irregularities appear on the exposed region by controlling the relative motion of the polymeric substrate and the irradiation source when scanning the exposed region.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: Provided is a method for nitriding a metal in a salt bath by using a non-cyanide salt and a nitrided metal manufactured using the same. The method includes the steps of: immerging at least one salt selected from the group consisting of KNO3, KNO2, Ca(NO3)2, NaNO3 and NaNO2 into the salt bath; melting the salt by heating and maintaining the molten salt at a predetermined temperature; and submerging the metal in the salt bath. Nitriding in non-cyanide salts, such as potassium nitrate (KNO3), potassium nitrite (KNO2), sodium nitrate (NaNO3), sodium nitrite (NaNO2), calcium nitrate (Ca(NO3)2) and their mixtures, is capable of solving an environmental pollution problem and reducing a cost. Also, the method is capable of increasing nitrided depth of the metal two to six times compared to conventional nitriding methods. As a result, the method can be carried out in various application fields.