Abstract: A technique relates to operating a memory controller. The memory controller drives first memory devices and second memory devices of the memory controller in a dual channel mode. A first error correcting code (ECC) memory device and a second ECC memory device protect the first memory devices and the second memory devices. The memory controller drives the first memory devices and the second memory devices in a single channel mode such that the second ECC memory device is a spare memory device, and the first ECC memory device protects the first memory devices and the second memory devices. The memory controller is configured to switch between the dual channel mode and the single channel mode.

Abstract: A technique relates to operating a memory controller. A feedback mode is initiated such that an identified memory device of first memory devices includes an identified bit lane on a data bus to be utilized for testing. A process includes sending commands on the 1-N bit lanes of the command address bus to a buffer and duplicating commands designated for a selected one of the 1-N bit lanes. The process includes sending the duplicated commands on the identified bit lane in route to the buffer, and receiving a result of a parity check for the commands sent on the 1-N bit lanes, such that when the result is a pass the process ends. When the result is a fail, a duplicated parity check is performed using duplicated commands on the identified bit lane in place of the selected one. When the duplicated parity check passes, the selected one is bad.

Abstract: A nonvolatile queue manager queues entries of host data from one or more host channels to one or more write buffers for storage in one or more nonvolatile memory devices of a nonvolatile memory array. The nonvolatile queue manager compares a number of the entries queued to one or more nonvolatile memory holdup power write thresholds based on detecting a power loss event. The nonvolatile queue manager tracks one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds. The nonvolatile queue manager initiates a mitigation action on a subsequent restoration of power to handle the one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds.

Abstract: A memory subsystem is disclosed comprising at least one memory module, the memory module having a substrate to which a plurality of memory chips is mounted and a voltage regulator, the voltage regulator receiving a power supply signal from a system power supply and outputting two or more power signals, each power signal providing a different, regulated voltage, which regulated voltages are each routed to each of the memory chips; and a redundant voltage regulator external to and not mounted on the memory module and configured to output two or more power signals, providing external different, regulated voltages which are the same voltages as the voltages output by the voltage regulator on the memory module, and supplying the two or more signals to the memory module.

Abstract: An embodiment includes a method for use in operating a memory chip, the method comprising: operating the memory chip with an increased burst length relative to a standard burst length of the memory chip; and using the increased burst length to access metadata during a given operation of the memory chip. Another embodiment includes a memory module, comprising a plurality of memory chips, each memory chip being operable with an increased burst length relative to a standard burst length of the memory chip, the increased burst length being used to access metadata during a given operation of the memory module.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips and a data I/O chip physically integrated into the 3D stack. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to shut down (de-activate) one or more of the data interfaces (for example, to reduce power consumption of the memory module). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: The present invention provides a computer implemented method, system, and computer program product of assessing in-field reliability of computer memories. In an embodiment, the present invention includes taking control of a portion of a computer memory circuit, utilizing a portion of a computer memory bus associated with the portion of the computer memory circuit, moving computer memory circuit data stored in the portion of the computer memory circuit to a host computer storage device, executing a set of logical operations assessing reliability of the portion of the computer memory circuit, resulting in assessment data stored in a reliability error monitor (REM) computer storage device, transmitting the stored assessment data from the REM computer storage device to a computer memory controller circuit, and in response to the transmitting, moving the moved computer memory circuit data from the host computer storage device back to the portion of the computer memory circuit.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips and a data I/O chip physically integrated into the 3D stack. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to shut down (de-activate) one or more of the data interfaces (for example, to reduce power consumption of the memory module). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips physically integrated with a data I/O chip. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to de-activate one or more of the data interfaces (for example, to reduce power consumption). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: A nonvolatile queue manager queues entries of host data from one or more host channels to one or more write buffers for storage in one or more nonvolatile memory devices of a nonvolatile memory array. The nonvolatile queue manager compares a number of the entries queued to one or more nonvolatile memory holdup power write thresholds based on detecting a power loss event. The nonvolatile queue manager tracks one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds. The nonvolatile queue manager initiates a mitigation action on a subsequent restoration of power to handle the one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds.

Abstract: An aspect includes data backup management between volatile memory and non-volatile memory in a through-silicon via module of a computer system. Data is copied data from the volatile memory to the non-volatile memory during a refresh cycle of the volatile memory. The data is written to one or more non-volatile memory cells within the non-volatile memory prior to a next refresh cycle of the volatile memory.

Abstract: An aspect includes coherency management between volatile memory and non-volatile memory in a through-silicon via (TSV) module of a computer system. A plurality of TSV write signals is simultaneously provided to the volatile memory and the non-volatile memory. A plurality of values of the TSV write signals is captured within a buffer of the non-volatile memory corresponding to a data set written to the volatile memory. Storage space is freed within the buffer as the data set corresponding to the values of the TSV write signals stored within the buffer is written to a non-volatile memory array within the non-volatile memory.

Abstract: A nonvolatile queue manager queues entries of host data from one or more host channels to one or more write buffers for storage in one or more nonvolatile memory devices of a nonvolatile memory array. The nonvolatile queue manager compares a number of the entries queued to one or more nonvolatile memory holdup power write thresholds based on detecting a power loss event. The nonvolatile queue manager tracks one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds. The nonvolatile queue manager initiates a mitigation action on a subsequent restoration of power to handle the one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds.

Abstract: The present invention provides a computer implemented method, system, and computer program product of assessing in-field reliability of computer memories. In an embodiment, the present invention includes taking control of a portion of a computer memory circuit, utilizing a portion of a computer memory bus associated with the portion of the computer memory circuit, moving computer memory circuit data stored in the portion of the computer memory circuit to a host computer storage device, executing a set of logical operations assessing reliability of the portion of the computer memory circuit, resulting in assessment data stored in a reliability error monitor (REM) computer storage device, transmitting the stored assessment data from the REM computer storage device to a computer memory controller circuit, and in response to the transmitting, moving the moved computer memory circuit data from the host computer storage device back to the portion of the computer memory circuit.

Abstract: An aspect includes multi-channel nonvolatile memory management. A nonvolatile queue manager queues entries of host data from one or more host channels to one or more write buffers for storage in one or more nonvolatile memory devices of a nonvolatile memory array. The nonvolatile queue manager compares a number of the entries queued to one or more nonvolatile memory holdup power write thresholds based on detecting a power loss event. The nonvolatile queue manager tracks one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds. The nonvolatile queue manager initiates a mitigation action on a subsequent restoration of power to handle the one or more locations in the nonvolatile memory array targeted by one or more of the entries extending beyond the one or more nonvolatile memory holdup power write thresholds.

Abstract: Embodiments disclosed herein generally relate to techniques for routing data through one or more cascaded memory modules. Each memory module can include a plurality of data buffers. Each data buffer includes a plurality of ports for routing data to and/or from other memory modules. In one embodiment, the data buffer is configured to route write data to DRAM devices on a first memory module or route write data to a data buffer of at least one downstream memory module. The data buffer is also configured to receive read data from a DRAM device of the first memory module or receive read data from a downstream memory module.

Abstract: An aspect includes determining a configuration change to at least one memory device of a memory system. A band switch enable command is sent from a memory controller to the at least one memory device indicating the configuration change. One or more internal circuits of the at least one memory device are set into a quiescent mode based on receiving the band enable command. One or more of a voltage and a frequency of the at least one memory device are adjusted to implement the configuration change. A band switch disable command is sent from the memory controller to the at least one memory device based on completing the adjusting. The one or more internal circuits are enabled to operate using the adjustment based on receiving the band switch disable command from the memory controller.

Abstract: A memory management system and a method of managing a memory device are described. The system includes a memory device with a memory array to store data and associated error correction coding (ECC) bits and an extended correction table. The extended correction table stores error information additional to the ECC bits for one or more of the data in the memory array. The system also includes a controller to control the memory device to write and read the data.

Abstract: Examples of techniques for implementing a spare data buffer in a memory are disclosed. In one example implementation according to aspects of the present disclosure, a computer-implemented method may include detecting, by a processor, a failed data buffer in a memory. The method may also include enabling, by the processor, the spare data buffer in the memory. The method may further include extending, by the processor, a buffer communication to the spare data buffer to enable the spare buffer to functionally replace the failed data buffer.

Abstract: Techniques are disclosed for dynamic random access memory (DRAM) cell. The DRAM cell comprises a first bit line and a first complementary bit line, a storage capacitor having a first node coupled with the first complementary bit line, and a transistor selectable by a word line to couple a second node of the storage capacitor to the first bit line, wherein a voltage potential across the first bit line and the first complementary bit line when the transistor is selected is indicative of a bit of data.