Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: A link establishing method, a link establishing device and a link partner device are disclosed. A link establishing method performed by a link establishing device may include: exchanging link information on the link establishing device and link information on a link partner device through auto-negotiation messages; determining priority order of available links among a plurality of links connected between the link establishing device and the link partner device using the link information on the link establishing device and the link information on the link partner device; and establishing a link based on a multi-core fiber between the link establishing device and the link partner device on the basis of the priority order.

Abstract: Provided is an anode material for a secondary battery, and more particularly, to an anode material for a secondary battery using a silicon oxide (SiOx), and a method of preparing the same. There is provided an anode material for a secondary battery, formed by preparing an SiOx and a carbon material, mixing the SiOx and the carbon material, forming a SiOx-carbon (SiOx-C) composite, and performing a heat treatment.

Abstract: An apparatus and method for processing a packet in a multi-protocol label switching-transport profile (MPLS-TP) network are provided. In the method of processing a packet, a packet transport layer (PTL) index and a layer stack (LS) or multiple label pop (MPOP) loopback header are used, and it is possible to remove a size limitation on lookup results of a lookup table when multiple labels are stacked, and solve the problem of having to extract all labels as label keys regardless of label operations upon an incoming label map (ILM) table lookup.

Abstract: In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer.

Abstract: A pixel circuit includes an OLED having a cathode coupled to a power source voltage, a first transistor having a second electrode coupled to an anode of the OLED, and a gate electrode coupled to a gate control-line, a second transistor having a second electrode coupled to a first electrode of the first transistor, a third transistor having a first electrode coupled to another power source voltage, a second electrode coupled to a first electrode of the second transistor, and a gate electrode coupled to a gate control-line, a fourth transistor having a first electrode coupled to a gate electrode of the second transistor, a second electrode coupled to the anode of the OLED, and a gate electrode coupled to a scan-line, and a capacitor coupled between the gate electrode of the second transistor and the second electrode of the third transistor.

Abstract: A semiconductor device having a chip stack and an interconnection terminal is provided. The chip stack includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip stacked on each other. The interconnection terminal is electrically coupled to the chip stack. The first semiconductor chip includes a first front surface and a first backside surface. The second semiconductor chip includes a second front surface, a second backside surface, a second circuit layer and a through-electrode which is electrically coupled to the second circuit layer and penetrates the second semiconductor chip. The third semiconductor chip includes a third front surface, a third backside surface opposite to the third front surface and a third circuit layer adjacent to the third front surface. The first front surface and the second front surface face each other. The third front surface and the second backside surface face each other.

Abstract: A method for determining a transmission power in a multi-input multi-output (MIMO) system based on a cooperative transmission is provided. The method includes setting a power constraint condition of a transmitter and target quality information of a receiver. The method further includes determining the transmission power to be allocated to the transmitter to transmit the data to the receiver based on the power constraint condition and the target quality information.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

Abstract: Provided is a data processing system, including: a plurality of line matching blocks each including a data processor configured to store predefined preliminary transmission tables corresponding to the respective events requiring change of a data path, to determine whether to change a transmission table based on information received through an internal communication device, and to select and activate a preliminary transmission table corresponding to an event from among the preliminary transmission tables, wherein the preliminary transmission tables include destination information on all the physical or logical paths; and a shared bus configured to enable information on an event requiring change of the data path to be transmitted and received between the plurality of line matching blocks.

Abstract: Semiconductor devices having an optical transceiver include a cladding on a substrate, a protrusion vertically extending trough the cladding and materially in continuity with the substrate, and a coupler on the cladding and the protrusion.

Abstract: Embodiments may provide a scan driver including a plurality of stages for simultaneously outputting first scan signals in a simultaneous driving period and for progressively outputting second scan signals in a progressive driving period, wherein each of the stages includes a first signal processing unit coupled to an input terminal, a first clock terminal, a third clock terminal, an auxiliary terminal, a first power source terminal, and a second power source terminal to output a first output signal and a second output signal, and a second signal processing unit coupled to a second clock terminal and the first power source terminal to receive the first output signal and the second output signal and to output a first scan signal and a second scan signal to an output terminal.

Abstract: A building component modeling apparatus records a process of creating the first component through at least one first primitive among a plurality of building primitives. The building component modeling apparatus analyzes the process of creating the first component to extract at least one first parameter defining the first component. The building component modeling apparatus creates a template of the first component by using the at least one first parameter.

Abstract: A method for determining a transmission power in a multi-input multi-output (MIMO) system based on a cooperative transmission is provided. The method includes setting a power constraint condition of a transmitter and target quality information of a receiver. The method further includes determining the transmission power to be allocated to the transmitter to transmit the data to the receiver based on the power constraint condition and the target quality information.

Abstract: Provided is a sulfamide derivative having an adamantyl group represented by the following Formula 1, or a pharmaceutically acceptable salt thereof. The sulfamide derivative suppresses the activity of 11?-hydroxysteroid dehydrogenase type 1 (11?-HSD1), and is useful in the treatment of various diseases that are mediated by 11?-HSD1.

Abstract: A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

Abstract: A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

Abstract: A disclosed display device includes a touch panel including s number of receiving electrodes and k number of driving electrodes which are formed to intersect the receiving electrodes, k being less than s and larger than 2, the touch panel provided in an in-cell type. The display device further includes a touch sensing unit configured to respectively supply a first driving voltage and a second driving voltage to an nth driving electrode and an (n+1)th driving electrode, which are adjacent to each other among the driving electrodes, to determine whether the nth driving electrode is touched, n being a natural number which is more than one and less than k, the touch sensing unit further configured to respectively supply the first driving voltage and the second driving voltage to a kth driving electrode and a (k?1)th driving electrode to determine whether the kth driving electrode is touched.