Abstract: Disclosed are a display device and method of driving the same in which a display panel may include a plurality of gate lines, a plurality of data lines and a touch panel, the touch panel including a first touch electrode group where s number of horizontal electrodes and k (which is less than s) number of longitudinal electrodes cross each other; and a touch sensing unit that during a first period of a plurality of touch sensing periods included in a one frame period, determines whether at least one of the s number of horizontal electrodes is touched based on a plurality of sensing signals received from at least two of the s number of horizontal electrodes, and during a second period of the plurality of touch sensing periods, determines whether at least one of the s number of horizontal electrodes, which is either the same or different from the at least one of the s number of horizontal electrodes determined during the first period, is touched based on one or more sensing signals received from at least one of

Abstract: A light source package includes a first light source configured to emit first light, an imaginary central axis of the first light extending in a first direction. The light source package may further include a second light source configured to emit second light, an imaginary central axis of the second light extending in a second direction that is different from the first direction. The light source package may further include a first optical part including a first surface that is configured to reflect at least a first portion of the first light. The light source package may further include a second optical part configured to spread the second light. The light source package may advantageously enable illuminating a desirably large display area with a minimum number of light sources and/or optical parts.

Abstract: The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate, forming a via-hole vertically penetrating the inter-metal dielectric layer and the substrate, providing carbon to at least one surface, such as a surface including carbon in the plurality of dielectric layers exposed by the via-hole, forming a via-dielectric layer covering an inner surface of the via-hole, and forming a through-electrode surrounded by the via-dielectric layer in the via-hole.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

Abstract: An assembly simulation apparatus and method for a wooden structure are provided. The assembly simulation apparatus for a wooden structure includes an element analysis unit for analyzing shapes of a plurality of elements constituting a three-dimensional (3D) wooden structure model and a coupling relation between the elements. A relation graph generation unit generates a relation graph based on the analyzed shapes of the plurality of elements and the analyzed coupling relation between the elements. An animation creation unit creates an animation of a movement path depending on a task for coupling or separating the plurality of elements, based on the generated relation graph. An animation play unit simulates an assembly method for the wooden structure by playing the created animation depending on the assembly method for the wooden structure.

Abstract: A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

Abstract: A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

Abstract: A pixel has a simple structure and compensates for a threshold voltage of a driving transistor. An organic light emitting display device includes the pixel, which includes: an organic light emitting diode; a first transistor having a second electrode coupled to the organic light emitting diode and a first electrode coupled to a data line; a second transistor between a gate electrode and the second electrode of the first transistor and turned on when a scan signal is supplied to a scan line; and a storage capacitor electrically coupled between the gate electrode of the first transistor and a first power supply.

Abstract: Disclosed is a thin film solar cell including a substrate, a first electrode, a light absorbing layer, a buffer layer, a window layer, and a second electrode, wherein a compound layer of MxSy or MxSey (here, M is metal, and x and y each are a natural number) is present in an interface between the first electrode and the light absorbing layer, the thickness of the compound layer of MxSy or MxSey being 150 nm or less.

Abstract: An organic light emitting display device is capable of securing sufficient compensation period such that a threshold voltage of a driving transistor may be compensated. A pixel includes: an organic light emitting diode; a second transistor for controlling an amount of current supplied from a first power source to the organic light emitting diode; a first capacitor having a first terminal coupled to a gate electrode of the second transistor; a first transistor coupled between a second terminal of the first capacitor and a data line, and being configured to turn on when a scan signal is supplied to a scan line; and a third transistor coupled between a gate electrode and a second electrode of the second transistor and having a turning-on period that is not overlapped with that of the first transistor. The third transistor is configured to turn on for a longer time than the first transistor.

Abstract: The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole.

Abstract: A hemming system of panels for a vehicle hems panels of various types of vehicles by loading, hemming, and unloading of the panels of vehicles using twin turn tables 100 connected to each other by a carrier. As such, the hemming system improves productivity, reduces working time by automatically repeating loading, hemming, and unloading of panels and transporting of molds using platform trucks, and increases the commercial values of products by improving the quality of hemming panels.

Abstract: Discussed is a display device integrated with touch screen. The display device includes a plurality of touch groups into which a plurality of touch electrodes are physically divided, a plurality of first driving electrode lines connected to a plurality of driving electrodes of a first touch group of the touch groups, a plurality of second driving electrode lines connected to a plurality of driving electrodes of a second touch group of the touch groups, a plurality of first receiving electrode lines connected to a plurality of receiving electrodes of the first touch group, a plurality of second receiving electrode lines connected to a plurality of receiving electrodes of the second touch group, a touch driving IC configured to supply a touch driving signal to the first and second driving electrode lines, and a touch sensing IC configured to sense touch signals of the first and second receiving electrode lines.

Abstract: A memory module is provided. A plurality of DRAMs is mounted on a PCB. At least one DRAM has an operating parameter different from other DRAMs according to a position where the at least one DRAM is mounted on the PCB.

Abstract: A method is provided including: detecting an activation of an electronic device; detecting a current location of the electronic device; detecting whether the activation is prohibited at the current location of the electronic device; and shutting down the electronic device when the activation is prohibited.

Abstract: A method may provide an agent service to a user terminal by including receiving a user instruction from the user terminal, determining whether at least one agent reply to at least one keyword included in the user instruction is able to be searched for in a database, providing at least one suggestive query to the user terminal to allow a search for the at least one agent reply, receiving at least one set of additional information with respect to the at least one suggestive query from the user terminal, and providing the at least one agent reply to the user terminal based on the at least one set of additional information.

Abstract: A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

Abstract: Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.

Abstract: A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.