Abstract: A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, a first conductive structure on the substrate, and a second conductive structure on the first conductive structure. The semiconductor device includes first and second metal-diffusion-blocking layers on respective sidewalls of the first and second conductive structures. The semiconductor device includes an insulating layer between the first and second metal-diffusion-blocking layers. Moreover, the semiconductor device includes a metal-diffusion-shield pattern in the insulating layer and spaced apart from the first conductive structure.

Abstract: In order to perform protection switching of a frame that is transmitted and received between a packet processor and a host processor, when an input frame is a receiving frame and a signal failure has occurred, by transporting a message including a protection switching command to a packet processor, protection switching is performed. Information representing that protection switching is performed is recorded in a header of the receiving frame, and a frame including a message including a corresponding header is transported to the host processor.

Abstract: The semiconductor memory device includes: a memory unit including a plurality of memory blocks; a decoder suitable for storing bad block information about the plurality of memory blocks, and outputting the bad block information in response to an address signal; and a control logic suitable for controlling the memory unit and the decoder to update a status register (SR) code in response to the bad block information when the semiconductor memory device at a ready state enters a busy state, and to perform a general operation according to the updated SR code and a command.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, a switching transistor formed over the substrate, a driving transistor electrically connected to the switching transistor, and a pixel electrode electrically connected to the driving transistor. The display also includes a pixel definition layer covering the pixel electrode and having a pixel opening, an organic emission layer formed only in the pixel opening and connected to the pixel electrode, and a common electrode formed over the organic emission layer. The pixel definition layer is formed over the driving transistor.

Abstract: An organic light-emitting diode display is disclosed. In one aspect, the display includes a display substrate including a display area and a peripheral area surrounding the display area. Scan lines are formed over the display substrate and configured to transmit a scan signal, data lines and driving voltage lines crossing the scan lines are configured to respectively provide a data signal and a driving voltage, and switching elements are electrically connected to the scan lines and data lines. Pixel electrodes are electrically connected to the switching elements, an organic emission layer is formed over the pixel electrodes, and a common electrode is formed over the organic emission layer. A common voltage line is formed substantially parallel to the data lines and configured to transmit a common voltage to the common electrode.

Abstract: A medium composition for increasing the colony number or colony size of microalgae includes, as an effective component, a conditioned medium derived from culture solution during the exponential phase of microalgae in culture. A solid medium contains the medium composition. A method for increasing the colony number or colony size of microalgae includes spreading and culturing microalgae on the solid medium.

Abstract: Disclosed is a thin film solar cell including a substrate, a first electrode, a light absorbing layer, a buffer layer, a window layer, and a second electrode, wherein a compound layer of MxSy or MxSey (here, M is metal, and x and y each are a natural number) is present in an interface between the first electrode and the light absorbing layer, the thickness of the compound layer of MxSy or MxSey being 150 nm or less.

Abstract: A semiconductor device and a method of operating the same are provided. The method includes performing a multi-plane erase operation on selected planes; determining that the multi-plane erase operation has failed when a number of erase loops reaches a maximum number without successful completion of the multi-plane erase operation; determining whether there are passed planes amongst the selected planes; and performing a soft program operation on the passed planes.

Abstract: An organic light-emitting display device includes a substrate having a display area and a non-display area, a thin-film transistor (TFT) that includes a gate electrode and that is disposed in the display area of the substrate, a first scan line disposed in a same layer as the gate electrode that is connected to the gate electrode; and a second scan line disposed in a different layer from the first scan line that overlaps the first scan line, wherein the first scan line is connected to the second scan line in the non-display area of the substrate.

Abstract: A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: A method includes providing a device under test, which includes a lower test layer and an upper test layer that is stacked on the lower test layer and includes an overhang protruding past an edge of the lower test layer by a predetermined length, fixing the lower test layer onto a mounting stage, and measuring adhesive force of an interlayer adhesive layer in a tensile mode by applying a load to a bottom surface of the overhang of the upper test layer in a first direction. An apparatus includes a mounting stage fixing the device under test, a load applying tip applying the load to the bottom surface of the overhang, a location adjuster adjusting a distance between the device under test and the load carrying tip, a load cell detecting a magnitude of the applied load, and a controller controlling the location adjuster and the load cell.

Abstract: A method of operating a semiconductor device includes dividing an operation of the semiconductor device into a plurality of periods, and determining a plurality of state codes respectively corresponding to the periods; performing the operation according to a received command; when a pause command is received, pausing the operation and storing a state code of the plurality of state codes corresponding to a paused period among the plurality of periods; and performing the operation starting from a period determined according to the stored state code when a resumption command is received.

Abstract: The present invention provides a 3-dimensional P-N junction solar cell composed of a base board coated with a back plate on the upper face of the same; a P type semiconductor thin film formed on the top side of the back plate which has a 3-dimensional porous structure and is composed of P type semiconductor crystal grains; a N type buffer layer formed on the surface of the crystal grains of the said P type semiconductor thin film with playing a role of coating the thin film; and a transparent electrode formed on the surface of the crystal grains of the P type semiconductor thin film on which the N type buffer layer is formed. The solar cell of the present invention is a P-N junction solar cell including a 3-dimensional photo catalytic thin film, which can provide an improved photoelectric conversion efficiency, compared with the conventional P-N junction solar cell, owing to the formation of the N-type buffer layer on the surface of the crystal grains of the 3-dimensional P type semiconductor thin film.

Abstract: Provided is an organic light-emitting diode (OLED) display including: a first plastic layer; a first barrier layer formed on the first plastic layer; a first intermediate layer formed on the first barrier layer; a second plastic layer formed on the intermediate layer; an OLED layer formed on the second plastic layer; and a thin-film encapsulation layer encapsulating the OLED layer.

Abstract: An electronic device with an electrode having a superior light transmittance and including a substrate, an amine group-containing compound layer formed on the substrate, and a metal layer formed on the amine group-containing compound layer is provided. In accordance with the present invention, the electrode is easily manufactured when a solution process is used, has performances of a light transmittance, a sheet resistance, and flexibility higher than those of a typical ITO transparent electrode, and a manufacturing cost of the electrode may be reduced.

Abstract: An apparatus and method for creating a block-type structure using sketch-based user interaction. The apparatus for creating a block-type structure includes a voxel modeling unit for modeling a sketch, input via an interface, into a three-dimensional (3D) voxel model, a block-type structure creation unit for modeling the 3D voxel model into a block-type structure into which blocks stored in a block database are assembled, based on the stored blocks, and a control unit for performing feedback for a procedure for modeling the block-type structure, based on the interaction of a user using the interface.

Abstract: An apparatus and method for modeling a cultural heritage building, which may intuitively model a 3D digital cultural heritage building while exhibiting the characteristics of the 3D digital cultural heritage building, through the use of a touch screen UI on a smart mobile device in a place where it is difficult to use a PC or existing software. The disclosed apparatus includes a measured drawing arrangement unit for displaying, on a touch screen, measured drawings that include information about members constituting a cultural heritage building, a member model generation unit for performing modeling based on multiple points input via the touch screen, thus generating 3D member models, a database for storing the member models generated by the member model generation unit, and a member arrangement unit for arranging each of the stored member models at an original location thereof based on the measured drawings.

Abstract: A sensory signal output apparatus, and more particularly to a sensory signal output apparatus includes a bone conduction output apparatus, the sensory signal output apparatus including: the magnetic circuit part 110; the coil part 120; and the case 101 in which the magnetic circuit part and the coil part are accommodated, wherein the sensory signal output apparatus generates a sound or vibration while vibrating, by the magnetic circuit part, depending on a direction of an alternating signal applied to the coil part. The case elastically supports the magnetic circuit part and the coil part so that the magnetic circuit part and the coil part are operated to repeal or attract each other, or in a state where one of the magnetic circuit part and the coil part is fixed, the other vibrates while performing a repulsion or attraction motion.