Abstract: A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

Abstract: A three-dimensional semiconductor memory device including a stack structure including gate structures and first dielectric patterns alternately stacked, a vertical channel penetrating the stack structure, and a charge storage layer extending from between the vertical channel and the first gate structures to between the vertical channel and the first dielectric patterns. The gate structures include first gate structures having a top surface and a bottom surface facing each other and having different width. The charge storage layer includes first segments between the vertical channel and the first gate structures, and second segments between the vertical channel and the first dielectric patterns. A thickness of the first segments is greater than a thickness of the second segments. One of the width of the top surface and the width of bottom surface of each first gate structure is the same as that of a first dielectric pattern on the first gate structure.

Abstract: A side airbag apparatus includes: an airbag cushion having a rear end configured to be secured to a side surface of a seat and a front end configured to move forwards while the airbag cushion is deployed forwards when gas is injected into the airbag cushion; at least one support tether having a first side coupled to a side surface of the seat to be rotatable about a rotating shaft extending in a direction parallel to a side of the seat, and extending in a longitudinal direction; and at least one outer tether having a first end coupled to a second side of the support tether, and a second end extending in the longitudinal direction and coupled to the front end of the airbag cushion.

Abstract: Provided is a cooled optical transmission module device including a silicon wafer having a plurality of platform mounting grooves, each of which serves as a space for mounting in which an optical transmission platform therein, a thermoelectric cooler bonded to the platform mounting groove to transfer heat to outside, the optical transmission platform provided on the thermoelectric cooler and configured to output an optical signal by generating and reflecting the optical signal, a dielectric sub-mount bonded to the platform mounting groove of the silicon wafer and electrically connected to the mounted optical transmission platform, and a cover configured to cover the platform mounting groove of the silicon wafer and seal the platform mounting groove while providing an electric path.

Abstract: A memory device, including a plurality of planes, includes a mode setting component to set an operation mode of the memory device as a verify pass mode to allow a verify operation, performed in the plurality of planes, to forcibly pass; and a verify signal generator for outputting a verify pass signal signaling that the verify operation has passed for each of the plurality of planes.

Abstract: A tether anchorage device for a swivel seat of a vehicle is provided. The device is configured such that an anchor including a horizontal bar and a vertical bar is mounted on a rear surface of the swivel seat, and a tether belt for fixing a baby seat is anchored to the anchor while being bound in a vertical direction as well as a horizontal direction of the swivel seat, so that the baby seat may be securely fixed to the swivel seat regardless of a rotating position of the swivel seat.

Abstract: The present invention relates to a memory device comprising biocompatible polymer nanoparticles, and a manufacturing method therefor. The present invention can provide a memory device which can be more efficiently integrated in the organic semiconductor field when applied to a biocompatible electronic device, and can have excellent capacitance by being treated with a silane coupling agent. In addition, the method for manufacturing the memory device, according to the present invention, uses a solution process, and thus a memory device can be manufactured with a very simple method.

Abstract: Provided is a fluid container including: a container main body, of which one side is open, configured to store a fluid; a housing having an outlet provided at one side and in which the container main body slides in a longitudinal direction; and a pump module coupled to the open one side of the container main body and configured to discharge the fluid to the outlet by sliding the container main body.

Abstract: The present disclosure relates to an airbag, and discloses an airbag support device and a control method thereof. The airbag support device includes an airbag cushion embedded in a side surface of a seatback and configured to be inflated and deployed forward from the seatback; a pop-up tether having one end connected to the seatback, and configured to be deployed in a direction in which the airbag cushion is deployed and to penetrate the airbag cushion; and a pop-up tether module provided on a side surface of a seat cushion, having the other end of the pop-up tether connected to an end of a tether pole, and configured so that the pop-up tether between the seatback and the tether pole is pulled while the airbag cushion is deployed to support the airbag cushion by the pop-up tether in a portion penetrating the airbag cushion.

Abstract: Disclosed is an image processing method. The method includes the steps of receiving an image obtained from a plurality of vehicles positioned on a road, storing the received images according to acquisition information of the received images; determining a reference image and a target image based on images having the same acquisition information among the stored images, performing an image registration using a plurality of feature points extracted from each of the determined reference image and target image, performing a transparency process for each of the reference image and the target image performed with the image registration, extracting static objects from the transparency-processed image, and comparing the extracted static objects with objects on an electronic map pre-stored to updating the electronic map data, when the objects on the electronic map data pre-stored are different from the extracted static objects.

Abstract: A stage of a scan driver for a display device, the stage includes: an output unit to output to an output terminal either a signal supplied to a first clock terminal corresponding to voltage of a first driving node or a voltage of a second power source corresponding to voltage of a second driving node; an input unit to control the voltage of the first driving node corresponding to signals supplied to a first input terminal, and the input unit to control the voltage of the second driving node corresponding to signals supplied to a second input terminal and a second clock terminal; a first signal processor including a second capacitor coupled between the second driving node and a second node, the first signal processor to control the voltage of the second driving node corresponding to signals supplied to a third clock terminal and a fourth clock terminal, the first signal processor to control a potential difference between both ends of the second capacitor corresponding to the signal supplied to the fourth clock

Abstract: An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including a doped area and an undoped area, a first insulation layer that covers the semiconductor layer, a first conductor on the first insulation layer, a second insulation layer that covers the first conductor, a second conductor on the second insulation layer, a third insulation layer that covers the second conductor, and a third conductor on the third insulation layer, wherein, in the semiconductor layer that overlaps the first conductor, the doped area is between undoped areas.

Abstract: Disclosed is a method for producing calcobutrol used as an MRI contrast agent. The method comprises the steps of: obtaining butrol represented by chemical formula 2 in the specification by reacting a gadobutrol represented by chemical formula 1 in the specification and a decomplexing agent; and obtaining a calcobutrol represented by chemical Formula 3 in the specification by reacting butrol with calcium ions.

Abstract: An apparatus for preventing a sub-frame of an electric vehicle with a wireless charging pad from being pushed back includes: a push bracket member having one side portion coupled to a front end module provided in front of a sub-frame of the electric vehicle and extending to be disposed between the sub-frame and a wireless charging pad mounted below the sub-frame. Upon a forward vehicle collision, the apparatus can induce deformation of the sub-frame equipped with the wireless charging pad to prevent the sub-frame from being pushed backward.

Abstract: A display device includes: scan, control, and emission control signal lines, signals transmitted thereby being different from one another; data and driving voltage lines; a first transistor including a first gate electrode and first source and drain; a second transistor including a second gate electrode connected to a first scan line, a second source connected to a first data line, and a second drain connected to the first source; a light-emitting element; a control transistor including a control gate electrode connected to a first control line and between the driving voltage line and the first source or the light-emitting element and the first drain; and an emission control transistor in series between the light-emitting element and the control transistor, the control transistor and the first transistor, or the driving voltage line and the control transistor, and an emission control gate electrode connected to the emission control signal line.

Abstract: A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.

Abstract: A locking mechanism for pillarless doors includes a first body mounted on a first side door and having a first cavity, a second body mounted on a second side door and having a second cavity opposite the first cavity, a locking member configured to be movably received between the first cavity of the first body and the second cavity of the second body, and a gas generator including a squib and an inflator chamber containing a gas generant configured to be burned by ignition of the squib, wherein the inflator chamber is separated from the first cavity by a burst membrane.

Abstract: A memory device, including a plurality of planes, includes a mode setting component to set an operation mode of the memory device as a verify pass mode to allow a verify operation, performed in the plurality of planes, to forcibly pass; and a verify signal generator for outputting a verify pass signal signaling that the verify operation has passed for each of the plurality of planes.

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface.

Abstract: Provided is a method for manufacturing a magnetic nano-structure. The method for manufacturing a magnetic nano-structure may comprise the steps of: preparing a source solution containing a first precursor including a rare-earth element, a second precursor including a transition metal element, and a third precursor including Fe; electrospinning the source solution to form a preliminary magnetic nano-structure containing a rare-earth oxide, a transition metal oxide, and a Fe oxide; and reducing the preliminary magnetic micro-structure to manufacture a magnetic nano-structure containing an alloy composition of the rare-earth element, the transition metal element, and the Fe.