Abstract: An oriented electrical steel sheet includes Ba at about 0.005 wt % to about 0.5 wt % inclusive, Y at about 0.005 wt % to about 0.5 wt % inclusive, or a composite of Ba and Y at about 0.005 wt % to about 0.5 wt % inclusive, the remainder including Fe and impurities, based on 100 wt % of a total composition of a base steel sheet thereof.

Abstract: A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.

Abstract: A grain-oriented electrical steel sheet of an embodiment of the present invention comprises Si: 1.0% to 7.0% and Y: 0.005% to 0.5% by wt %, and the remainder comprising Fe and other inevitable impurities, and 10 pieces or less of inclusions comprising Y and having a diameter of 30 nm to 5 ?m per area of 1 mm2.

Abstract: A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

Abstract: The grain-oriented electrical steel sheet according to one embodiment of the present invention includes, by weight, Si: 1.0 to 7.0%, B: 0.001 to 0.1%, and Ba and Y individually or in a total amount of 0.005 to 0.5%, and the remainder includes Fe and other unavoidable impurities.

Abstract: The present invention relates to a substrate structure in which organic-inorganic hybrid thin films are laminated and a method for preparing the same and more specifically to a substrate structure in which organic-inorganic hybrid thin films are laminated that can be used for light emitters, display devices and solar cell devices wherein the organic-inorganic hybrid thin film including a stable new functional group, an inorganic precursor and an organic precursor are alternately used to afford stability in air and a method for preparing the same.

Abstract: A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

Abstract: A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Abstract: A method for manufacturing an oriented electrical steel sheet according to an exemplary embodiment of the present invention includes: providing a slab including, as wt %, Si at equal to or less than 4.0% (excluding 0%), C at 0.001% to 0.4%, and Mn at 0.001% to 2.0%, and including a balance including Fe and inevitably mixed and input impurities; reheating the slab; manufacturing a hot steel sheet by hot-rolling the slab; performing hot-rolled steel sheet annealing to the hot steel sheet; primarily cold-rolling the hot-rolled steel sheet annealed hot steel sheet; decarburization-annealing the cold-rolled steel sheet; secondarily cold-rolling the decarburization-annealed steel sheet; and finally annealing the cold-rolled steel sheet, wherein, regarding the finally annealed steel sheet, a size 2L of a magnetic domain existing in a grain is less than a thickness D of the steel sheet (2L<D).

Abstract: A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.

Abstract: A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

Abstract: Provided is a grain-oriented electric steel sheet having superior magnetic property and to a grain-oriented electric steel sheet including 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities. The steel sheet having been subjected to secondary recrystallization using at least any one of grain boundary-segregated elementary S and an FeS precipitate as a grain growth inhibitor.

Abstract: A method for manufacturing a grain-oriented electrical steel sheet, according to an embodiment of the present invention includes: heating a slab, based on 100 wt % of a total composition thereof, including N at 0.0005 wt % to 0.015 wt %, Ti at 0.0001 wt % to 0.020 wt %, V at 0.0001 wt % to 0.020 wt %, Nb at 0.0001 wt % to 0.020 wt %, B at 0.0001 wt % to 0.020 wt %, and the remaining portion including Fe and other impurities, and then hot rolling it to prepare a hot-rolled steel sheet; annealing the hot-rolled steel sheet; after the hot-rolled steel sheet is annealed, cooling the hot-rolled steel sheet, and then cold rolling it to prepare a cold-rolled steel sheet; decarburization-annealing the cold-rolled steel sheet and then nitriding-annealing it, or simultaneously performing the decarburization-annealing and the nitriding-annealing; and final-annealing the decarburization-annealed and nitriding-annealed steel sheet.

Abstract: An oriented electrical steel sheet includes Ba at about 0.005 wt % to about 0.5 wt % inclusive, Y at about 0.005 wt % to about 0.5 wt % inclusive, or a composite of Ba and Y at about 0.005 wt % to about 0.5 wt % inclusive, the remainder including Fe and impurities, based on 100 wt % of a total composition of a base steel sheet thereof.

Abstract: Disclosed are an oriented electrical steel sheet and a manufacturing method thereof. An exemplary embodiment of the present invention provides a method of manufacturing an oriented electrical steel sheet, including: providing a slab including Si at 1.0 to 4.0 wt %, C at 0.1 to 0.4 wt %, and the remaining portion including Fe and other inevitably incorporated impurities; reheating the slab; producing a hot rolled steel sheet by hot rolling the slab; performing annealing of the hot rolled steel sheet; cold rolling the annealed hot rolled steel sheet; decarburizing and annealing the cold rolled steel sheet; cold rolling the decarburized and annealed steel sheet; and final annealing the cold rolled steel sheet.

Abstract: The present invention relates to an organic-inorganic hybrid thin film and a method for preparing the same and more specifically to an organic-inorganic hybrid thin film including a stable new functional group and a method for preparing the organic-inorganic hybrid thin film that is formed by the molecular layer deposition method alternately using inorganic precursor and organic precursor.

Abstract: The present invention relates to an organic-inorganic hybrid thin film and a method for preparing the same and more specifically to an organic-inorganic hybrid thin film including a stable new functional group and a method for preparing the organic-inorganic hybrid thin film that is formed by the molecular layer deposition method alternately using inorganic precursor and organic precursor.

Abstract: The present invention relates to a substrate structure in which organic-inorganic hybrid thin films are laminated and a method for preparing the same and more specifically to a substrate structure in which organic-inorganic hybrid thin films are laminated that can be used for light emitters, display devices and solar cell devices wherein the organic-inorganic hybrid thin film including a stable new functional group, an inorganic precursor and an organic precursor are alternately used to afford stability in air and a method for preparing the same.

Abstract: Provided is a grain-oriented electric steel sheet having superior magnetic property and to a grain-oriented electric steel sheet including 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities. The steel sheet having been subjected to secondary recrystallization using at least any one of grain boundary-segregated elementary S and an FeS precipitate as a grain growth inhibitor.

Abstract: Provided is a grain-oriented electric steel sheet and a method for manufacturing same, the steel sheet having superior magnetic properties. The method comprises heating a slab comprising 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities, performing hot-rolling of the heated slab, performing cold-rolling one time or two or more times including an intermediate annealing, performing decarbonization and re-crystallizing annealing, and performing secondary re-crystallizing annealing.