Patents by Inventor Kyung Bae Park

Kyung Bae Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same
    Patent number: 9899453
    Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Kyu-sik Kim, Yong-wan Jin, Woong Choi, Kwang-hee Lee, Do-hwan Kim
  • Compound and organic photoelectronic device and image sensor
    Patent number: 9884877
    Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: February 6, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Seon-Jeong Lim, Takkyun Ro, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Chul Joon Heo
  • Compound for organic photoelectric device and organic photoelectric device image sensor, and electronic device including the same
    Patent number: 9887370
    Abstract: A compound is represented by Chemical Formula 1, an organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode and including the compound represented by Chemical Formula 1, and an image sensor and an electronic device include the organic photoelectric device.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: February 6, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Sakurai Rie, Sung Young Yun, Seon-Jeong Lim, Takkyun Ro, Gae Hwang Lee, Tadao Yagi, Kyung Bae Park, Dong-Seok Leem, Yong Wan Jin, Chul-Joon Heo
  • NON-INVASIVE BIOMETRIC SENSOR BASED ON ORGANIC PHOTODETECTOR
    Publication number: 20180000387
    Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 4, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon HEO, Kyung Bae PARK, Takkyun RO, Kwang Hee LEE, Dongseon LEE, Yong Wan JIN, Moon Gyu HAN
  • Organic photoelectronic device and image sensor
    Patent number: 9831436
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm?1 in a wavelength region of about 450 nm to about 700 nm.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: November 28, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee Lee, Gae Hwang Lee, Dong-Seok Leem, Tadao Yagi, Xavier Bulliard, Yong Wan Jin, Kyung Bae Park, Sungdong Suh
  • IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20170338271
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
    Type: Application
    Filed: August 10, 2017
    Publication date: November 23, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan JIN, Kyu Sik KIM, Kyung Bae PARK, Kwang Hee LEE, Dong-Seok LEEM, Deukseok CHUNG
  • ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20170338431
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Application
    Filed: November 29, 2016
    Publication date: November 23, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: TAKKYUN RO, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Compound for organic photoelectric device and organic photoelectric device, image sensor, and electronic device including the same
    Patent number: 9818956
    Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: November 14, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takkyun Ro, Seon-Jeong Lim, Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Dong-Seok Leem, Yong Wan Jin, Yagi Tadao, Moon Gyu Han, Chuljoon Heo
  • IMAGE SENSORS AND ELECTRONIC DEVICES INCLUDING THE SAME
    Publication number: 20170278896
    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.
    Type: Application
    Filed: June 9, 2017
    Publication date: September 28, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Yong Wan Jin, Moon Gyu Han
  • Image sensor and electronic device including the same
    Patent number: 9761627
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: September 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Wan Jin, Kyu Sik Kim, Kyung Bae Park, Kwang Hee Lee, Dong-Seok Leem, Deukseok Chung
  • ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20170250227
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Application
    Filed: May 12, 2017
    Publication date: August 31, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Satoh RYUICHI, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Yong Wan JIN, Tadao YAGI, Chul Joon HEO
  • Organic photoelectronic device and image sensor
    Patent number: 9728586
    Abstract: An organic photoelectronic device includes a first electrode having a plurality of nanopatterns arranged at a regular interval, a second electrode facing the first electrode and an active layer between the first electrode and the second electrode, the active layer absorbing light in at least one wavelength of a visible ray region.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: August 8, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang Lee, Kyung Bae Park, Sung Young Yun, Yong Wan Jin, Moon Gyu Han
  • Image sensor and electronic device including the same
    Patent number: 9716120
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: July 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan Jin, Kwang Hee Lee, Gae Hwang Lee, Kyung Bae Park, Dong-Seok Leem, Yeong Suk Choi
  • OPTOELECTRONIC DEVICE, AND IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20170207275
    Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0<x<1), silicon oxynitride (SiOyNz, 0<y<0.5, 0<z<1), and a combination thereof.
    Type: Application
    Filed: January 19, 2017
    Publication date: July 20, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Heo, Kyu Sik Kim, Nam Jeong Kim, Seong Heon KIM, Yongsung Kim, Eunae Cho, Takkyun Ro, Dongjin Yun, Yongsu Kim, Wenxu Xianyu, Yong-Young Park, Kyung Bae Park
  • Image sensors and electronic devices including the same
    Patent number: 9691823
    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Yong Wan Jin, Moon Gyu Han
  • Organic photoelectronic device and image sensor
    Patent number: 9673259
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same
    Patent number: 9673258
    Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics
    Inventors: Kyo Jin Choo, Hirosige Goto, Kyu Sik Kim, Yun Kyung Kim, Kyung Bae Park, Jin Ho Seo, Sang Chul Sul, Kyung Ho Lee, Kwang-hee Lee
  • IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20170141143
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
    Type: Application
    Filed: October 3, 2016
    Publication date: May 18, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan JIN, Kwang Hee LEE, Gae Hwang LEE, Kyung Bae PARK, Dong-Seok LEEM, Yeong Suk CHOI
  • Stacked image sensor
    Patent number: 9628734
    Abstract: A stacked image sensor includes a substrate including a first photoelectric conversion device, a second photoelectric conversion device and a first color signal storing device disposed between the first photoelectric conversion device and the second photoelectric conversion device. A second color filter and a third color filter are disposed at positions corresponding to the first photoelectric conversion device and the second photoelectric conversion device on the substrate. A conductive connecting member is disposed between the second color filter and the third color filter. A first color sensing photoelectric conversion device is disposed on the second color filter, the third color filter, and the conductive connecting member. The cross-sectional area of conductive connecting member is at least greater than the cross-sectional area of the first color signal storing device.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: April 18, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae Park, Gae Hwang Lee, Kwang Hee Lee, Yong Wan Jin, Chul Joon Heo
  • ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20170040544
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm?1 in a wavelength region of about 450 nm to about 700 nm.
    Type: Application
    Filed: October 17, 2016
    Publication date: February 9, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee LEE, Gae Hwang LEE, Dong-Seok LEEM, Tadao YAGI, Xavier BULLIARD, Yong Wan JIN, Kyung Bae PARK, Sungdong SUH