Patents by Inventor Kyung Bae Park

Kyung Bae Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20140239271
    Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.
    Type: Application
    Filed: October 2, 2013
    Publication date: August 28, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Seok LEEM, Kyu Sik KIM, Kyung Bae PARK, Kwang Hee LEE, Seon-Jeong LIM
  • PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20140239278
    Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.
    Type: Application
    Filed: February 21, 2014
    Publication date: August 28, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae PARK, Kyu Sik KIM, Kwang Hee LEE, Dong-Seok LEEM, Seon-Jeong LIM
  • Method of manufacturing ZnO-based thin film transistor
    Patent number: 8735229
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: May 27, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Son, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Ji-sim Jung
  • Stacked transistors and electronic devices including the same
    Patent number: 8723181
    Abstract: Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: May 13, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Huaxiang Yin, Takashi Noguchi, Wenxu Xianyu, Kyung-bae Park
  • ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME
    Publication number: 20140117321
    Abstract: An organic photoelectric device may include an anode and a cathode facing each other and the active layer between the anode and cathode, wherein the active layer includes a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. Chemical Formula 1 and Chemical Formula 2 are the same as in the detailed description.
    Type: Application
    Filed: April 4, 2013
    Publication date: May 1, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seon Jeong LIM, Dong Seok LEEM, Kyu Sik KIM, Kyung Bae PARK, Kwang Hee LEE
  • Panel structure including transistor and connecting elements, display device including same, and methods of manufacturing panel structure and display device
    Patent number: 8698159
    Abstract: A panel structure includes a transistor including a gate electrode, a source electrode and a drain electrode, a power source line, a pixel electrode, and one or more contact plugs formed of a same material as the pixel electrode and electrically connecting the power source line and the source electrode.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: April 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Myung-kwan Ryu, Kee-chan Park, Jong-baek Seon
  • ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR
    Publication number: 20140097416
    Abstract: An organic photoelectric device may include a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. An image sensor may include the organic photoelectric device.
    Type: Application
    Filed: July 17, 2013
    Publication date: April 10, 2014
    Inventors: Kwang Hee LEE, Kyu Sik KIM, Kyung Bae PARK, Dong-Seok LEEM, Seon-Jeong LIM
  • ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR
    Publication number: 20140070183
    Abstract: An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device.
    Type: Application
    Filed: April 19, 2013
    Publication date: March 13, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae PARK, Kyu Sik KIM, Jung Woo KIM, Kwang Hee LEE, Dong-Seok LEEM, Seon-Jeong LIM
  • LIGHT TRANSMISSIVE ELECTRODE, ORGANIC PHOTOELECTRIC DEVICE, AND IMAGE SENSOR
    Publication number: 20140070189
    Abstract: According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode.
    Type: Application
    Filed: August 2, 2013
    Publication date: March 13, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Seok LEEM, Kyu Sik KIM, Jung Woo KIM, Kyung Bae PARK, Kwang Hee LEE, Seon Jeong LIM
  • Solution composition for forming oxide thin film and electronic device including the oxide thin film
    Patent number: 8658546
    Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: February 25, 2014
    Assignees: Samsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation
    Inventors: Jong-Baek Seon, Hyun-Jae Kim, Sang-Yoon Lee, Myung-Kwan Ryu, Hyun-Soo Shin, Kyung-Bae Park, Woong-Hee Jeong, Gun-hee Kim, Byung-Du Ahn
  • ORGANIC PHOTOELECTRIC MATERIAL AND ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR
    Publication number: 20140008619
    Abstract: An organic photoelectric material may include a compound represented by the above Chemical Formula 1, and an organic photoelectric device and an image sensor including the organic photoelectric material.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 9, 2014
    Inventors: Kwang Hee LEE, Kyu Sik KIM, Kyung Bae PARK, Dong-Seok LEEM, Seon-Jeong LIM, Yong Wan JIN
  • Oxide semiconductor transistor and method of manufacturing the same
    Patent number: 8586979
    Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: November 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Seok Son, Tae-Sang Kim, Jang-Yeon Kwon, Ji-Sim Jung, Sang-Yoon Lee, Myung-Kwan Ryu, Kyung-Bae Park, Byung-Wook Yoo
  • Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film
    Publication number: 20130248851
    Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.
    Type: Application
    Filed: February 27, 2013
    Publication date: September 26, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Baek SEON, Myung-kwan RYU, Kyung-Bae PARK, Sang-yoon LEE, Bon-Won KOO
  • Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
    Patent number: 8529802
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • Thin film transistor formed on flexible substrate and method of manufacturing the same
    Patent number: 8501556
    Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: August 6, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-yeon Kwon, Sang-yoon Lee, Jong-man Kim, Kyung-bae Park, Ji-sim Jung
  • Image sensor
    Patent number: 8476682
    Abstract: An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: July 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Woong Choi, Kyung Bae Park, Kyu Sik Kim, Yong Wan Jin, Kwang Hee Lee
  • Poly-Si thin film transistor and method of manufacturing the same
    Patent number: 8476636
    Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.
    Type: Grant
    Filed: December 5, 2008
    Date of Patent: July 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Kyung-bae Park, Sang-yoon Lee, Jang-yeon Kwon, Byung-wook Yoo, Tae-sang Kim, Kyung-seok Son, Ji-sim Jung
  • ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20130112947
    Abstract: An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
    Type: Application
    Filed: April 13, 2012
    Publication date: May 9, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee LEE, Kyu Sik KIM, Kyung Bae PARK, Dong-Seok LEEM, Seon Jeong LIM
  • PHOTODIODE
    Publication number: 20130105768
    Abstract: A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
    Type: Application
    Filed: May 1, 2012
    Publication date: May 2, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Seok LEEM, Kyu Sik KIM, Kyung Bae PARK, Kwang Hee LEE, Seon-Jeong LIM
  • ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME
    Publication number: 20130093932
    Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.
    Type: Application
    Filed: October 12, 2012
    Publication date: April 18, 2013
    Inventors: Kyo Jin CHOO, Hirosige GOTO, Kyu Sik KIM, Yun Kyung KIM, Kyung Bae PARK, Jin Ho SEO, Sang Chul SUL, Kyung Ho LEE, Kwang Hee LEE