Patents by Inventor Kyung Bae Park

Kyung Bae Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optoelectronic device, and image sensor and electronic device including the same
    Patent number: 10181497
    Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0<x<1), silicon oxynitride (SiOyNz, 0<y<0.5, 0<z<1), and a combination thereof.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: January 15, 2019
    Assignee: Samsung Electronics, Ltd.
    Inventors: Sung Heo, Kyu Sik Kim, Nam Jeong Kim, Seong Heon Kim, Yongsung Kim, Eunae Cho, Takkyun Ro, Dongjin Yun, Yongsu Kim, Wenxu Xianyu, Yong-Young Park, Kyung Bae Park
  • NEAR-INFRARED LIGHT ORGANIC SENSORS, EMBEDDED ORGANIC LIGHT EMITTING DIODE PANELS, AND DISPLAY DEVICES INCLUDING THE SAME
    Publication number: 20190013368
    Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack on the substrate and including an NIR emitter configured to emit NIR light and an NIR detector. The NIR light sensor stack may be between the substrate and the OLED stack. The OLED panel may be included in one or more various electronic devices.
    Type: Application
    Filed: July 5, 2018
    Publication date: January 10, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chil Hee CHUNG, Sangyoon LEE, Yong Wan JIN, Kyung Bae PARK, Kwang Hee LEE
  • Organic photoelectronic device and image sensor
    Patent number: 10141376
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: November 27, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • PHOTODIODE
    Publication number: 20180323389
    Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
    Type: Application
    Filed: July 10, 2018
    Publication date: November 8, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Kyu Sik Kim, Yong Wan Jin, Kwang Hee Lee, Dong-Seok Leem, Seon-Jeong Lim
  • COMPOUNDS FOR INFRARED LIGHT SENSING DEVICES, INFRARED LIGHT SENSING DEVICES, IMAGE SENSORS, AND ELECTRONIC DEVICES INCLUDING THE SAME
    Publication number: 20180315933
    Abstract: A compound for an infrared light sensing device may be represented by a particular chemical formula and may be included in an infrared light sensing device. An image sensor may include the infrared light sensing device, and an electronic device may include the image sensor.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Applicants: Samsung Electronics Co., Ltd., IMPERIAL INNOVATIONS LIMITED
    Inventors: Moon Gyu HAN, Kyung Bae Park, Yong Wan Jin, Chul Joon Heo, Brett Baatz, Martin Heeney, Minwon Suh, Yang Han, Ji-Seon Kim
  • Optoelectronic diodes and electronic devices including same
    Patent number: 10115919
    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: October 30, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae Park, Gae Hwang Lee, Takkyun Ro, Yong Wan Jin, Chul Joon Heo
  • SQUARYLIUM COMPOUNDS AND INFRARED CUT FILMS, INFRARED CUT FILTERS AND ELECTRONIC DEVICES INCLUDING THE SAME
    Publication number: 20180282303
    Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
    Type: Application
    Filed: March 23, 2018
    Publication date: October 4, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo
  • Photodiode
    Patent number: 10043992
    Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: August 7, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae Park, Kyu Sik Kim, Yong Wan Jin, Kwang Hee Lee, Dong-Seok Leem, Seon-Jeong Lim
  • Image sensor and electronic device including the same
    Patent number: 10020341
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: July 10, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan Jin, Kyu Sik Kim, Kyung Bae Park, Kwang Hee Lee, Dong-Seok Leem, Deukseok Chung
  • ELECTRONIC DEVICES AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20180182812
    Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.
    Type: Application
    Filed: November 28, 2017
    Publication date: June 28, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon HEO, Ryuichi Satoh, Kyung Bae Park, Yeon-Hee Kim, Takkyun Ro, Takao Motoyama, Se Hyuck Park
  • Image sensor and electronic device including the same
    Patent number: 10008544
    Abstract: An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light in an infrared light wavelength spectrum. The second pixel includes a first photoelectric device defined in the second pixel. The first photoelectric device includes an infrared light absorption layer between a first electrode and a second electrode and configured to selectively absorb light in an infrared spectrum. The second pixel may be configured to compensate the luminance sensitivity of the image sensor. The first and second pixels may be included in a unit pixel group. The image sensor may include an array of multiple unit pixel groups arranged in one or more rows and one or more columns.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: June 26, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Yong Wan Jin, Moon Gyu Han
  • OPERATING METHOD FOR FUNCTION OF IRIS RECOGNITION AND ELECTRONIC DEVICE SUPPORTING THE SAME
    Publication number: 20180173949
    Abstract: A method of operating an iris recognition function, and an electronic device thereof are provided. The electronic device includes a first camera device, a second camera device, and at least one processor operatively connected to the first camera device and the second camera device. The at least one processor is configured to, if an execution of an iris recognition function is requested, obtain a first image associated with a subject, based on the first camera device, and output information about a feature point of the obtained first image on a display, and if the information about the feature point satisfies a specified condition, obtain a second image associated with the subject based on the second camera device, and wherein a display location of the information about the feature point on the display is changed depending on a capture angle between the subject and the first camera device.
    Type: Application
    Filed: November 21, 2017
    Publication date: June 21, 2018
    Inventors: Su Ryong Jeong, Kyung Bae Park, Woon Tahk Sung, Yeong Seong Yoon, Tae Hwa Hong
  • OPTOELECTRONIC DIODES AND ELECTRONIC DEVICES INCLUDING SAME
    Publication number: 20180151818
    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
    Type: Application
    Filed: April 4, 2017
    Publication date: May 31, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Gae Hwang Lee, Takkyun Ro, Yong Wan Jin, Chul Joon Heo
  • COMPOUND AND ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20180111952
    Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
    Type: Application
    Filed: December 21, 2017
    Publication date: April 26, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Seon-Jeong Lim, Takkyun Ro, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Chul Joon Heo
  • PHOTOELECTRIC DEVICE AND IMAGE SENSOR AND ELECTRONIC DEVICE
    Publication number: 20180114814
    Abstract: A photoelectric device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and including a light absorbing material configured to selectively absorb first visible light including one of visible light in a blue wavelength region of greater than or equal to about 380 nm and less than about 500 nm, visible light in a green wavelength region of about 500 nm to about 600 nm, and visible light in a red wavelength region of greater than about 600 nm and less than or equal to about 700 nm, and a plurality of nanostructures between the first electrode and the photoelectric conversion layer and configured to selectively reflect the first visible light.
    Type: Application
    Filed: April 4, 2017
    Publication date: April 26, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Young YUN, Gae Hwang Lee, Kyung Bae Park, Kwang Hee Lee, Dong-Seok Leem, Xavier Bulliard, Yong Wan Jin
  • ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR AND ELECTRONIC DEVICE
    Publication number: 20180062112
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p1/n1) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p1/n1) is greater than the second composition ratio (p2/n2).
    Type: Application
    Filed: June 15, 2017
    Publication date: March 1, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon HEO, Kyung Bae PARK, Sung Young YUN, Tadao YAGI, Takkyun RO, Gae Hwang LEE, Kwang Hee LEE, Yong Wan JIN
  • Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same
    Patent number: 9899453
    Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Kyu-sik Kim, Yong-wan Jin, Woong Choi, Kwang-hee Lee, Do-hwan Kim
  • Compound and organic photoelectronic device and image sensor
    Patent number: 9884877
    Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: February 6, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Seon-Jeong Lim, Takkyun Ro, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Chul Joon Heo
  • Compound for organic photoelectric device and organic photoelectric device image sensor, and electronic device including the same
    Patent number: 9887370
    Abstract: A compound is represented by Chemical Formula 1, an organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode and including the compound represented by Chemical Formula 1, and an image sensor and an electronic device include the organic photoelectric device.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: February 6, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Sakurai Rie, Sung Young Yun, Seon-Jeong Lim, Takkyun Ro, Gae Hwang Lee, Tadao Yagi, Kyung Bae Park, Dong-Seok Leem, Yong Wan Jin, Chul-Joon Heo
  • NON-INVASIVE BIOMETRIC SENSOR BASED ON ORGANIC PHOTODETECTOR
    Publication number: 20180000387
    Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 4, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon HEO, Kyung Bae PARK, Takkyun RO, Kwang Hee LEE, Dongseon LEE, Yong Wan JIN, Moon Gyu HAN