Abstract: A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

Abstract: A semiconductor device has a semiconductor die with a sensitive area. A dam wall is formed over the semiconductor die proximate to the sensitive area. In one embodiment, the dam wall has a vertical segment and side wings. The dam wall can have a plurality of rounded segments integrated with a plurality of vertical segments as a unitary body. Alternatively, the dam wall has a plurality of separate vertical segments arranged in two or more overlapping rows. A plurality of conductive posts is formed over the semiconductor die. An electrical component is disposed over the semiconductor die. The semiconductor die and electrical component are disposed over a substrate. An insulating layer is formed over the substrate outside the dam wall. An underfill material is deposited between the semiconductor die and substrate. The dam wall and insulating layer inhibit the underfill material from contacting any portion of the sensitive area.

Abstract: A semiconductor device has a substrate and two semiconductor die disposed over the substrate. A thermal interface material is disposed over the semiconductor die. A conductive epoxy is disposed on a ground pad of the substrate. A lid is disposed over the semiconductor die. The lid includes a sidewall over the ground pad between the semiconductor die. The lid physically contacts the conductive epoxy and thermal interface material.

Abstract: A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

Abstract: A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

Abstract: A semiconductor device has a substrate and two semiconductor die disposed over the substrate. A thermal interface material is disposed over the semiconductor die. A conductive epoxy is disposed on a ground pad of the substrate. A lid is disposed over the semiconductor die. The lid includes a sidewall over the ground pad between the semiconductor die. The lid physically contacts the conductive epoxy and thermal interface material.

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

Abstract: A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

Abstract: An integrated circuit packaging system, and a method of manufacture thereof, including: a substrate including: a first trace layer, an encapsulation on the first trace layer, the first trace layer having a surface exposed from the encapsulation with a rough texture characteristic of removal of a conductive carrier coating, a second trace layer on the encapsulation and over the first trace layer, the second trace layer connected to the first trace layer; and an integrated circuit die attached to the substrate.