Abstract: A display device includes a timing controlling part generating an image data, a data control signal and a gate control signal; a data driving part generating a data voltage using the image data and the data control signal; a gate driving part generating a gate voltage using the gate control signal; a display panel including a plurality of subpixels and displaying an image using the data voltage and the gate voltage; and a plurality of first MUX switches and a plurality of second MUX switches sequentially transmitting the data voltage to two of a same color among the plurality of subpixels.

Abstract: Disclosed are an electrolyte membrane for a lithium-air battery, a method of manufacturing the same, a cathode for a lithium-air battery, a method of manufacturing the same, and a lithium-air battery including the electrolyte membrane and the cathode. Particularly, the lithium-air battery includes i) an electrolyte membrane, which is manufactured using an inorganic melt admixture including two or more nitrogen-oxide compounds and thus may have a very low eutectic point, and ii) a cathode, which is manufactured by reducing a metal at a fast speed on a carbon material. As such, the lithium-air battery is capable of stably operating even at low temperatures and providing high power output.

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device may include a first interlayer insulating film containing therein a plurality of pores, a first line structure in the first interlayer insulating film, an inserted insulating film extending along and on a upper surface of the first interlayer insulating film and in contact with the first interlayer insulating film, a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the first line structure, a second interlayer insulating film on the barrier insulating film and a second line structure disposed in the second interlayer insulating film and connected to the first line structure.

Abstract: A reinforcing member for cold forming according to an embodiment comprises: a blank member; and a reinforcing patch member provided to cover at least a portion of the blank member and coupled to the blank member by a plurality of welded portions, wherein the entire region of a heat-affected zone formed around the welded portions in the blank member is positioned in a region corresponding to the reinforcing patch member, and a heat-affected zone formed around a first welded portion from among the welded portions may contact the central point of a second welded portion adjacent to the first welded portion or may be formed to be spaced apart from the central point of the second welded portion.

Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.

Abstract: There is provided an apparatus for detecting a musical note of an instrument comprising a sensor unit including a sensor configured to sense a vibration of the instrument and a control unit configured to identify a component of the musical note based on a frequency of the vibration recognized by the sensor unit, wherein the sensor unit is connected to a port of a microprocessor of the control unit through a first route to transfer the recognized vibration, and wherein the sensor unit is selectively connected to a port of the microprocessor through a second route different from the first route to output a sound based on a signal supplied from the microprocessor.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.

Abstract: A method of tracing a position of a pipeline using a mapping probe includes: inserting and moving the mapping probe in a pipeline; receiving and keeping acceleration information and angular information in real time in a memory; estimating Euler angle (roll and pitch); estimating Euler angle (roll, pitch, and yaw); estimating a system modeling; estimating and applying covariance of system noise and covariance of measured noise; estimating three-dimensional position information modeling; receiving and keeping movement distance information of the mapping probe from an encoder in a memory; estimating and keeping in real time three-dimensional position information of the mapping probe in the memory; receiving the accumulated real-time three-dimensional position information of the mapping probe; mapping the accumulated real-time three-dimensional position information of the mapping probe to geographic information; and displaying the accumulated position information of the mapping probe mapped to the geographic info

Abstract: Disclosed are an apparatus for forming a layer and a method of forming the layer using the same. The apparatus includes a transfer chamber in which a substrate is transferred, a deposition chamber positioned at a side of the transfer chamber and performing a deposition process on the substrate to thereby form the layer on the substrate, and at least a de-hydrogen chamber positioned at another side of the transfer chamber and performing a de-hydrogen process on the layer on the substrate to reduce a hydrogen concentration in the layer. Accordingly, the de-hydrogen process is performed in the apparatus without unloading of the substrate from the apparatus.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: An electronic device is provided. The electronic device includes an image sensor configured to sense a motion of a bow to the string instrument, a vibration sensor configured to sense a vibration generated by the string instrument, and a control module configured to determine a fingering position of a user with respect to the string instrument using the motion of the bow and the vibration.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

Abstract: A Pipe Mapping Probe Apparatus for Searching Pipe Route Position includes: a first disc fitted and fastened on a shaft member thread-fastened to the inner side of a connection shaft at a first side of an internal body of a first pig; a cap coupled to a side of the shaft member outside the first disc; a first pig coupled to the shaft member; elastic members composed of three flexible springs coupled to a second side of an external body of the first pig; a cable that electrically connects a battery, a sensor unit, and a control board of the first pig and an encoder of a second pig, is connected with the battery through a first cable socket coupled to the external body of the first pig, and is connected to an encoder through a second cable socket disposed at the center of the second plate coupled to a first side of the second pig and through an encoder socket on the top of the encoder disposed in an internal body of the second pig; the second pig coupled to second sides of the elastic members at the first side o

Abstract: A semiconductor LED package includes a package body having first and second electrode structures and an LED chip connected to at least one of the first and second electrode structures using a wire. The LED chip includes a light emitting structure and first and second electrode parts. At least one of the first and second electrode parts includes a bonding electrode layer made of a material having the same composition as a material of the wire and bonded to the wire, and an uneven electrode layer disposed on the bonding electrode layer and having at least one through hole filled with the wire. The at least one through hole allows a top surface of the bonding electrode layer to be exposed therebelow.

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

Abstract: A Pipe Mapping Probe Apparatus for Searching Pipe Route Position includes: a first disc fitted and fastened on a shaft member thread-fastened to the inner side of a connection shaft at a first side of an internal body of a first pig; a cap coupled to a side of the shaft member outside the first disc; a first pig coupled to the shaft member; elastic members composed of three flexible springs coupled to a second side of an external body of the first pig; a cable that electrically connects a battery, a sensor unit, and a control board of the first pig and an encoder of a second pig, is connected with the battery through a first cable socket coupled to the external body of the first pig, and is connected to an encoder through a second cable socket disposed at the center of the second plate coupled to a first side of the second pig and through an encoder socket on the top of the encoder disposed in an internal body of the second pig; the second pig coupled to second sides of the elastic members at the first side o