Abstract: A junction field effect transistor is fabricated in crystalline silicon by using oppositely doped polysilicon as the gate (POSFET). The depletion region of the pn (or np) junction formed at the polysilicon/silicon interface is used as the gate electrode to modulate the current path through the silicon channel from source to drain, the source and drain contacts may either be conventional metal or polysilicon heavily doped of the same conductivity type as the single crystal silicon substrate.

Abstract: A mixing chamber designed for ready disassembly is described in which a generally spherical-shaped outer container encloses an inner sphere. Entry and exit openings are provided on opposite sides of the outer sphere, so that breath specimens pass through the chamber between the outer surface of the inner sphere and the inner surface of the outer sphere and undergo thorough mixing with low back pressure over a wide flow range. The interior volume can be increased by using a hollow inner sphere with an opening through the wall thereof to permit the inner sphere to fill with breath specimen also.

Abstract: A coin-sorting and counting apparatus in which a mixture of coins of different denominations is deposited on a rotating surface and queued thereon by multiple coin guides. These coin guides define a coin-queueing channel for lining up coins on the rotating surface in an orderly fashion preparatory to introducing them into a coin-sorting channel. To increase the speed of sorting, a coin recirculation channel is also provided for receiving certain ones of the coins which have been moved by the rotating surface past the entrance to the coin-queueing channel and redirecting such coins to such entrance. One of the queueing channel guides also acts as a coin position retainer for retaining those coins which have been moved past the entrance of the queueing channel, without forming into the queue, at the same radial distance from the axis of the rotating surface while the surface moves such coins toward the recirculation channel.

Abstract: A junction field effect transistor is fabricated in crystalline silicon by using oppositely doped polysilicon as the gate (POSFET). The depletion region of the pn (or np) junction formed at the polysilicon/silicon interface is used as the gate electrode to modulate the current path through the silicon channel from source to drain, the source and drain contacts may either be conventional metal or polysilicon heavily doped of the same conductivity type as the single crystal silicon substrate.

Abstract: A series of 5-endo-(quinoline-carbonyloxy)-,(benzothiophene-carbonyloxy)- and (quinoxaline-carbonyloxy)-N[amino-(lower)alkyl]bicyclo[2.2.1]-heptane-2,3- di-endo-carboxylic acid imides has been found to possess excellent prophylactic and therapeutic activity as anti-arrhythmic agents.

Abstract: A series of 5-endo-(benzothiophene-carbonyloxy)-N[amino-(lower)alkyl]bicyclo[2.2.1]-he ptane-2,3-di-endo-carboxylic acid imides has been found to possess excellent prophylactic and therapeutic activity as anti-arrhythmic agents.