Abstract: An apparatus for use in manufacturing a semiconductor device having input-output (IO) lands arranged in an IO array on an IO face includes a body having a plurality of cavities extending from an operating face into the body; the cavities are arranged in a cavity loci array which is in registeration with the IO lands when the apparatus is in a manufacturing position with the operating face generally adjacent the IO face. Each cavity has a depth and a lateral expanse which cooperate to establish a volume defined by a cavity bottom and at least one cavity wall. The volume accommodates an appropriate amount of solder material to establish a measure of the solder material on a facing IO land when the apparatus is in the manufacturing position.

Abstract: Doped semiconductor with high dopant concentrations in small semiconductor regions without excess spreading of the doped region are formed by:(a) applying a dopant-containing oxide glass layer on the semiconductor surface,(b) capping the dopant-containing oxide glass layer with a conformal silicon oxide layer,(c) heating the substrate from step (b) in a non-oxidizing atmosphere whereby at least a portion of the dopant in the glass diffuses into the substrate at the semiconductor surface, and(d) heating the glass-coated substrate from step (c) in an oxidizing atmosphere whereby at least a portion of the dopant in the glass near the semiconductor surface is forced into the substrate at the semiconductor surface by diffusion of oxygen through the glass.The method is especially useful for making buried plates in semiconductor substrates which may be used in trench capacitor structures. The preferred semiconductor substrate material is monocrystalline silicon. The preferred dopant is arsenic.

Abstract: The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

Abstract: A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses an etch/dep ratio greater than one to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.

Abstract: A punched slug removal system for punching a slug from a workpiece and removing the punched slug. The system includes a punch having a reciprocating travel path with a transition point where the punch changes direction. A die plate has an aperture into which a die bushing may be disposed. The die bushing provides support for the workpiece and has an opening through which the punch and a slug pass. A manifold supports the die plate and (if present) the die bushing and has a distribution channel and an orifice which direct a gas flow onto a slug attached to the punch in a direction perpendicular to the reciprocating travel path of the punch to remove the slug from the punch. The distribution channel is tapered to increase the velocity of the gas flow. The orifice is positioned at the top of the manifold adjacent the transition point of the reciprocating travel path of the punch.

Abstract: The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

Abstract: The stresses commonly induced in the dielectrics of integrated circuits manufactured using metal patterning methods, such as reactive ion etching (RIE) and damascene techniques, can be reduced by rounding the lower corners associated with the features which are formed as part of the integrated circuit (e.g., the interconnects) before applying the outer (i.e., passivation) layer. In connection with the formation of metal lines patterned by a metal RIE process, such corner rounding can be achieved using a two-step metal etching process including a first step which produces a vertical sidewall and a second step which tapers lower portions of the vertical sidewall or which produces a tapered spacer along the lower portions of the vertical sidewall. This results in a rounded bottom corner which improves the step coverage of the overlying dielectric, in turn eliminating the potential for cracks.

Abstract: A punch tool for punching a slug from a workpiece. The punch of the punch tool has a reciprocating travel path with a transition region where the punch changes direction. A die plate of the punch tool has an aperture. A support bushing disposed in the aperture of the die plate provides support for the workpiece and has an underside and an opening through which the punch and the slug pass. A nozzle disposed in the aperture of the die plate provides an internal passage for the removal of punch slugs from the tool. The nozzle has a top and a side wall with a hole disposed in the side wall adjacent the transition region of the reciprocating travel path of the punch. The nozzle, the support bushing, and the die plate are integrated to form a flow path delivering a gas flow to the hole in the nozzle. The flow path and the hole direct the gas flow on a slug attached to the punch in the transition region of the reciprocating travel path of the punch to remove the slug from the punch.

Abstract: A laser tool for securing or removing a component from a semiconductor substrate includes a light-transmissive bonding tip having an opening to accommodate a central portion of the component inner and outer walls of the tip being coated with a light reflective material, a portion of the end of the tip being coated with a light absorptive material, so that peripheral areas of the component are locally heated by the tip to mount or remove the component.

Abstract: Temperature gradients between a ceramic substrate of high thermal conductivity and the braze materials used to attach a metallic device such as a cap are reduced by using an embedded internal heat source in the substrate to minimize the thermal gradient, thereby minimizing the stresses that can result in substrate cracking when a cap is brazed onto the substrate.

Abstract: A repaired laser ablation mask is disclosed capable of withstanding laser fluences in the range from about 200 mJ/cm.sup.2 to at least 500 mJ/cm.sup.2. The repaired mask comprises a single or multiple layers of apertured metal, such as, aluminum, on a quartz substrate. The laser mask repair technique and structure are also disclosed. The thickness of the metal layer, such as, aluminum layer, is in the range from about 2 microns to about 6 microns. A laser projection etching technique is also disclosed for using the repaired ablation mask.

Abstract: A repaired laser ablation mask is disclosed capable of withstanding laser fluences in the range from about 200 mJ/cm.sup.2 to at least 500 mJ/cm.sup.2. The repaired mask comprises a single or multiple layers of apertured metal, such as, aluminum, on a quartz substrate. The laser mask repair technique and structure are also disclosed. The thickness of the metal layer, such as, aluminum layer, is in the range from about 2 microns to about 6 microns. A laser projection etching technique is also disclosed for using the repaired ablation mask.

Abstract: A laser ablation apparatus and method removes undesired portions of a workpiece. An industrial laser generates a beam of optical energy and directs the beam at the workpiece. A mechanism in the path of the beam for shapes the cross-section of the beam and includes first and second linear actuators on opposite sides of the beam path. Each of the actuators includes a plurality of linear members, with each linear member being adjacent to and in contact with another linear member, and means for individually inserting and retracting each of said members into and out of said beam path a desired distance to thereby shape the beam so as to ablate only undesired portions of the workpiece.

Abstract: The present invention relates generally to a new structure and a method for repairing electrical lines, and more particularly, the invention encompasses a structure and a method for repairing electrical lines on a ceramic or a semiconductor substrate. On a substrate that has an open or an electrical discontinuity, one or more trenches or grooves are made next to the open, or discontinuity and using standard deposition process one or more metals are deposited in the open to provide or restore electrical continuity while the excess deposition material is allowed to drain or propagate into the trench.

Abstract: A solder ball removal tool uses ultrasonic vibrations to remove specific solder balls from high density chips, substrate solder ball terminal connections, card or board solder ball connections, or other solder ball array for the purpose of customizing the electrical functionality of a module. The tool also allows for the removal of damaged or defective solder balls for the purpose of replacement with defect free solder balls.

Abstract: A specially designed tip containing an electron discharge milled cone of specific dimensions is used to transfer a critical solder volume from a solder ball carrier to a specific solder ball site on the base line metal on a high density chip, substrate terminal connection, solder ball connection, or any solder ball array. The critical tip/cone dimensions have a height of the cone and a circumference at the base which generate a specific volume of solder to be transferred.

Abstract: The present invention relates generally to a new structure and a method for repairing electrical lines, and more particularly, the invention encompasses a structure and a method for repairing electrical lines on a ceramic or a semiconductor substrate. On a substrate that has an open or an electrical discontinuity, one or more trenches or grooves are made next to the open, or discontinuity and using standard deposition process one or more metals are deposited in the open to provide or restore electrical continuity while the excess deposition material is allowed to drain or propagate into the trench.

Abstract: A conductive line is applied to a substrate by aligning the conductive line in juxtaposition with a selected area of the substrate; bonding the conductive line to the substrate; and detaching the conductive line from a carrier in which the conductive line is suspended. The carrier has a carrier opening defined by sidewalls, and conductive material is suspended by the sidewalls of the carrier opening so as to be embedded within the carrier opening, and form the conductive line.

Abstract: A conductive line is applied to a substrate by aligning the conductive line in juxtaposition with a selected area of the substrate; bonding the conductive line to the substrate; and detaching the conductive line from a carrier in which the conductive line is suspended. The carrier has a carrier opening defined by sidewalls, and conductive material is suspended by the sidewalls of the carrier opening so as to be embedded within the carrier opening, and form the conductive line.

Abstract: A conductive line is applied to a substrate by aligning the conductive line in juxtaposition with a selected area of the substrate; bonding the conductive line to the substrate; and detaching the conductive line from a carrier in which the conductive line is suspended. The carrier has a carrier opening defined by sidewalls, and conductive material is suspended by the sidewalls of the carrier opening so as to be embedded within the carrier opening, and form the conductive line.